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 WTK9410
Surface Mount N-Channel Enhancement Mode MOSFET
P b Lead(Pb)-Free
DRAIN CURRENT 18 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE
D
1 3
S S S G
8 7
D
2 4
D D
6 5
Features:
* Simple Drive Requirement. * Low On-Resistance. * Fast Switching. * Super high dense cell design for low RDS(ON) RDS(ON)<5.5m@VGS=10V RDS(ON)<6.2m@VGS=4.5V RDS(ON)<8.0m@VGS=2.5V * Rugged and Reliable. * SOP-8 Package.
1
SOP-8
Maximum Ratings (TA=25C Unless Otherwise Specified)
Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) (TA =25C) (TA =70C) Pulsed Drain Current(2) Power Dissipation(TA =25C) Maximax Junction-to-Ambient(1) Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD RJA TJ Tstg Value 30 12 18 15 80 2.5 50 +150 -55 to +150 Unite V V A A W C/W C C
Device Marking
WTK9410 = 9410SC
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WTK9410
Electrical Characteristics (TA=25C Unless otherwise noted) Static (2)
Characteristic Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS=0V, ID=250A Gate-Source Threshold Voltage VDS=VGS, ID=250A Gate-Source Leakage Current VDS=0V, VGS=12V Drain-Source Leakage Current @Tj=25C, VDS=30V,VGS=0V @Tj=70C, VDS=24V,VGS=0V Drain-Source On-Resistance3 VGS=10V, ID=18A VGS=4.5V, ID=12A VGS=2.5V, ID=6A Forward Transconductance VDS=10V, ID=12A
V(BR)DSS VGS(th) IGSS
30 -
-
1.2
V V
-
-
100
nA
IDSS
-
-
1 25
A
rDS(on)
-
-
5.5 6.2 8.0 -
m
gfs
-
47
S
Dynamic (3)
Input Capacitance VDS=25V,VGS=0V, f=1.0MHZ Output Capacitance VDS=25V,VGS=0V, f=1.0MHZ Reverse Transfer Capacitance VDS=25V,VGS=0V, f=1.0MHZ Ciss Coss Crss 5080 660 400 8100 pF
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WTK9410
Electrical Characteristics (TA=25C Unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Switching
Turn-On Delay Time VDS=15V, VGS=10V, ID=1A, RG=3.3, RD=15 Rise Time VDS=15V, VGS=10V, ID=1A, RG=3.3, RD=15 Turn-Off Time VDS=15V, VGS=10V, ID=1A, RG=3.3, RD=15 Fall Time VDS=15V, VGS=10V, ID=1A, RG=3.3, RD=15 Total Gate Charge3 VDS=24V, VGS=4.5V, ID=18A Gate-Source Charge VDS=24V, VGS=4.5V, ID=18A Gate-Drain Charge VDS=24V, VGS=4.5V, ID=18A Td(on) Tr Td(off) Tf Qg
-
16
12
-
nS
96 30
95
59
Qgs Qgd
10 23
-
nC
Source-Drain Diode Characteristics
Forward On Voltage3 VGS=0V,IS=18A Reverse Recovery Time3 VGS=0V,IS=18A, dl/dt=100A/ s Reverse Recovery Charge VGS=0V,IS=18A, dl/dt=100A/ s VSD 43 39 1.2 V nS nC
Trr Qrr
Note: 1. Surface mounted on 1 in2 copper pad of FR4 board; 125C/W when mounted on Min. copper pad. 2. Pulse width limited by Max. junction temperature. 3. Pulse width 300us, duty cycle 2%.
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WTK9410
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WTK9410
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WTK9410
SOP-8 Package Outline Dimensions
WEITRON
Unit:mm
1
L
E1 D 7 (4X) A C 7(4X)
2A
A1
e
B
eB
SYMBOLS
MILLIMETERS MAX MIN
A A1 B C D E1 eB e L
1.75 1.35 0.20 0.10 0.45 0.35 0.18 0.23 4.69 4.98 3.56 4.06 5.70 6.30 1.27BSC 0.60 0.80 0 8
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