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| 2SC4672 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features: * Low saturation voltage, typically VCE(sat) =0.35V at IC/IB=1A/50mA. * Excellent DC current gain characteristics. SOT-89 Mechanical Data: * Case : Molded Plastic ABSOLUTE MAXIMUM RATINGS(TA=25C Unless Otherwise Noted) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current (DC) Total Device Disspation TA=25C Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Value 60 50 6 2.0 2 +150 -55 to +150 Unit V V V A W C C WEITRON http://www.weitron.com.tw 1/3 02-Apr-07 2SC4672 ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC=50A, IE=0 Collector-Emitter Breakdown Voltage IC=1mA, IB=0 Emitter-Base Breakdown Voltage IE=50A, IC=0 Collector Cut-Off Current VCB=60V, IE=0 Emitter-Cut-Off Current VEB=5V, I C=0 Symbol BVCBO BVCEO BVEBO ICBO IEBO Min 60 50 6.0 Typ Max 0.1 0.1 Unit V V V A A ON CHARACTERISTICS* DC Current Gain VCE=2V, IC=500mA Collector-Emitter Saturation Voltage IC=1A, IB=50mA *Pulse Test: Pluse Width 380s, Duty Cycle 2%. hFE VCE(sat) 82 270 0.35 V DYNAMIC CHARACTERISTICS Transition Frequency VCE=2V, IE =500mA, f=100MHz Output Capacitance VCB=10V, IE=0, f=1MHz fT Cob 210 25 MHz pF CLASSIFICATION OF hFE Rank Range Marking P 82-180 DKP Q 120-270 DKQ WEITRON http://www.weitron.com.tw 2/3 02-Apr-07 2SC4672 SOT-89 Outline Dimensions unit:mm E G Dim A SOT-89 J C H K L B D A B C D E G H J K L Min Max 1.400 1.600 0.320 0.520 0.360 0.560 0.350 0.440 4.400 4.600 1.400 1.800 2.300 2.600 3.940 4.250 1.500TYP 2.900 3.100 WEITRON http://www.weitron.com.tw 3/3 02-Apr-07 |
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