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| Photodiode Preliminary Wavelength Infrared Type Planar 6/21/2007 Technology InGaAs/InP EPD-1300-0-3.0 rev. 04/07 Case TO-39 Description InGaAs-Photodiode mounted in TO-39 standard package . High spectral sensitivity in the infrared range (NIR , SWIR) due to large active area. 3,25 0,45 0,1 Chip Location 9, 0,1 0,1 90 0, 1 O7,62 O9,14 5,90 8,13 Applications Optical communications, safety equipment, light barriers Anode 0, 13,5 1,0 2,00 0,05 80 Chip Location ELC-70 0 0, 5 45, 00 Miscellaneous Parameters Tamb = 25 unless otherwise specified C, Parameter Active area Temperature coefficient Operating temperature range Storage temperature range Test onditions Symbol A TC(ID) Tamb Tstg Value 7.0 7.4 -40 to +85 -40 to +100 Unit mm %/K C C Optical and Electrical Characteristics Tamb = 25 unless otherwise specified C, Parameter Forward voltage Breakdown voltage 2) Test conditions IF = 10 mA IR = 10 A VR = 0 V VR = 0 V VR = 0 V VR = 5 V VR = 10 mV = 1300 nm = 1300 nm VR = 0 V VR = 0 V Ee = 1mW/cm Symbol VF VR 0,5 S ID RSH NEP D* CJ IPh Min Typ 0.6 Max Unit V V 5 800 680 0.9 5 15 30 5.2x10-14 5.1x10 1000 15 12 Sensitivity range at 10 % Spectral bandwidth at 50 % Responsivity at 1300 nm Dark current Shunt resistance Noise equivalent power Specific detectivity Junction capacitance Photo current at 1300 nm2) 1) 2) 1) 1750 nm nm A/W 30 nA M W/ Hz cm Hz W -1 1300 pF A measured on bare chip for information only Note: All measurements carried out with EPIGAP equipment EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2 Photodiode Preliminary 6/21/2007 EPD-1300-0-3.0 rev. 04/07 Typical Optical Responsivity (A/W ) 1,0 0,8 0,6 0,4 0,2 0,0 400 600 800 1000 1200 1400 1600 1800 W avelength [nm] EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2 |
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