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NTD6415AN N-Channel Power MOSFET 100 V, 23 A, 55 mW
Features
* * * *
Low RDS(on) High Current Capability 100% Avalanche Tested These Devices are Pb-Free and are RoHS Compliant
V(BR)DSS Value 100 $20 23 16 PD IDM TJ, Tstg IS EAS 83 89 -55 to +175 23 79 W A C G Unit V V A 100 V
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ID MAX (Note 1) 23 A
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Continuous Drain Current RqJC Power Dissipation RqJC Pulsed Drain Current Steady State Steady State TC = 25C TC = 100C TC = 25C Symbol VDSS VGS ID
RDS(on) MAX 55 mW @ 10 V
N-Channel D
tp = 10 ms
Operating and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 23 A, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes, 1/8 from Case for 10 Seconds
S A mJ 4 4
TL
260
C
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Case (Drain) Steady State Junction-to-Ambient (Note 1) Symbol RqJC RqJA Max 1.8 39 Unit C/W
3 DPAK CASE 369AA STYLE 2
12
1
3 IPAK CASE 369D STYLE 2
2
YWW 64 15ANG
1 Gate
2 Drain
3 Source
YWW 64 15ANG 1 Gate 2 Drain 3 Source Publication Order Number: NTD6415AN/D
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in [2 oz] including traces).
MARKING DIAGRAM & PIN ASSIGNMENTS
4 Drain 4 Drain
6415AN Y WW G
= Device Code = Year = Work Week = Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
(c) Semiconductor Components Industries, LLC, 2009
November, 2009 - Rev. 0
1
NTD6415AN
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Plateau Voltage Gate Resistance SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge td(on) tr td(off) tf VSD tRR Ta Tb QRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 23 A TJ = 25C TJ = 125C VGS = 10 V, VDD = 80 V, ID = 23 A, RG = 6.1 W 10 37 30 37 0.83 0.68 65 46 19 176 nC ns 1.2 V ns VGS(TH) VGS(TH)/TJ RDS(on) gFS CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGP RG VGS = 10 V, VDS = 80 V, ID = 23 A VGS = 0 V, f = 1.0 MHz, VDS = 25 V VGS = 10 V, ID = 23 A VGS = 5 V, ID = 10 A VGS = VDS, ID = 250 mA 2.0 7.6 47 13 700 110 52 29 1.2 5 14.6 5.7 2.3 V W nC 55 4.0 V mV/C mW S pF V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V, VDS = 100 V TJ = 25C TJ = 125C VGS = 0 V, ID = 250 mA 100 113 1.0 100 "100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit
VDS = 0 V, VGS = "20 V
CHARGES, CAPACITANCES AND GATE RESISTANCE
DRAIN-SOURCE DIODE CHARACTERISTICS VGS = 0 V, IS = 23 A
2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device NTD6415ANT4G NTD6415AN-1G Package DPAK (Pb-Free) IPAK (Pb-Free) Shipping 2500 / Tape & Reel 75 Units / Rail
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
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2
NTD6415AN
40 40 TJ = 25C 10 V 6.5 V 7.5 V ID, DRAIN CURRENT (A) 6.0 V 30 VDS w 10 V
ID, DRAIN CURRENT (A)
30
20
5.5 V
20 TJ = 125C 10
TJ = 25C TJ = -55C
10
5.0 V 4.5 V
0
0
1 2 3 4 VDS, DRAIN-TO-SOURCE VOLTAGE (V)
5
0
2
3 4 5 6 7 VGS, GATE-TO-SOURCE VOLTAGE (V)
8
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.11 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 5 6 7 8 9 ID = 23 A TJ = 25C RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.0 8
Figure 2. Transfer Characteristics
VGS = 10 V
TJ = 175C TJ = 125C
TJ = 25C TJ = -55C
10
10
12
14
16
18
20
22
24
VGS, GATE-TO-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On-Region versus Gate Voltage
Figure 4. On-Resistance versus Drain Current and Gate Voltage
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
3 2.5 2 1.5 1
ID = 23 A VGS = 10 V
10000
VGS = 0 V TJ = 150C
IDSS, LEAKAGE (nA)
1000
100
TJ = 125C
0.5 -50
-25
0
25
50
75
100
125
150
175
10
10
20
30
40
50
60
70
80
90 100
Figure 5. On-Resistance Variation with Temperature
TJ, JUNCTION TEMPERATURE (C)
Figure 6. Drain-to-Source Leakage Current versus Voltage
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
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3
NTD6415AN
QT VDS Qds VGS VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS, GATE-TO-SOURCE VOLTAGE (V) 1600 TJ = 25C VGS = 0 V C, CAPACITANCE (pF) 1200 10 8 6 4 2 0 ID = 23 A TJ = 25C 0 5 10 15 20 25 Qg, TOTAL GATE CHARGE (nC) 100 80 60 40 20 0 30
800
Qgs
Ciss
400 Coss 20 40 60 80
0
Crss 0
100
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
1000
Figure 8. Gate-to-Source Voltage and Drain-to-Source Voltage versus Total Charge
25 IS, SOURCE CURRENT (A) 20 15 10 5 0 0.4 TJ = 25C VGS = 0 V
VDS = 80 V ID = 23 A VGS = 10 V
t, TIME (ns)
100 tf 10 tr td(off) td(on)
1
1
10 RG, GATE RESISTANCE (W)
100
0.5 0.6 0.7 0.8 VSD, SOURCE-TO-DRAIN VOLTAGE (V)
0.9
Figure 9. Resistive Switching Time Variation versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
1000 AVALANCHE ENERGY (mJ) VGS = 10 V SINGLE PULSE TC = 25C 10 ms 10 100 ms 1 ms 1 10 ms RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 10 dc
80 70 60 50 40 30 20 10 0 100 1000 25 50 75 100 125
ID = 23 A
ID, DRAIN CURRENT (A)
100
0.1 1
150
175
Figure 11. Maximum Rated Forward Biased Safe Operating Area
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature
TJ, STARTING JUNCTION TEMPERATURE
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4
NTD6415AN
10
1 R(t) (C/W)
0.1
D = 0.01 0.02 0.01 0.05 0.2 0.5 SINGLE PULSE
0.01
0.001 0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (s)
Figure 13. Thermal Response
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NTD6415AN
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE) CASE 369AA-01 ISSUE A
-T- B V R
4
SEATING PLANE
C E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.025 0.035 0.018 0.024 0.030 0.045 0.386 0.410 0.018 0.023 0.090 BSC 0.180 0.215 0.024 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.63 0.89 0.46 0.61 0.77 1.14 9.80 10.40 0.46 0.58 2.29 BSC 4.57 5.45 0.60 1.01 0.51 --- 0.89 1.27 3.93 ---
S
A
1 2 3
Z H U
F L D
2 PL
J
DIM A B C D E F H J L R S U V Z
0.13 (0.005)
M
T
STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN
SOLDERING FOOTPRINT*
6.20 0.244 3.0 0.118
2.58 0.101
5.80 0.228
1.6 0.063
6.172 0.243
SCALE 3:1
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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6
NTD6415AN
PACKAGE DIMENSIONS
DPAK CASE 369D-01 ISSUE B
B V R
4
C E Z
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 ---
S -T-
SEATING PLANE
A
1 2 3
K
F D G
3 PL
J
H
M
0.13 (0.005)
T
STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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NTD6415AN/D

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