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| Datasheet File OCR Text: |
| PROCESS Power Transistor CP219 Central TM NPN - High Current Transistor Chip Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 1,670 PRINCIPAL DEVICE TYPES 2N5336 2N5337 2N5338 2N5339 2N5427 2N5428 2N5429 2N5430 D44H11 CJD44H11 BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com EPITAXIAL PLANAR 82 x 82 MILS 11 MILS 13.2 x 19.7 MILS 13.2 x 21.2 MILS Al - 30,000A Au - 12,000A R2 (21-September 2003) Central TM PROCESS CP219 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (21-September 2003) |
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