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| Ordering number : ENA1458 ATP405 SANYO Semiconductors DATA SHEET ATP405 Features * * * N-Channel Silicon MOSFET General-Purpose Switching Device Applications 10V drive. Avalanche resistance guarantee. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings 100 20 40 160 70 150 --55 to +150 148 40 Unit V V A A W C C mJ A Note : *1 VDD=30V, L=100H, IAV=40A *2 L100H, Single pulse Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) Conditions ID=1mA, VGS=0V VDS=100V, VGS=0V VGS=16V, VDS=0V VDS=10V, ID=1mA 2.0 Ratings min 100 10 10 3.5 typ max Unit V A A V Marking : ATP405 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. www.semiconductor-sanyo.com/network 42209QA MS IM TC-00001943 No. A1458-1/4 ATP405 Continued from preceding page. Parameter Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, ID=20A ID=20A, VGS=10V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=60V, VGS=10V, ID=40A VDS=60V, VGS=10V, ID=40A VDS=60V, VGS=10V, ID=40A IS=40A, VGS=0V Ratings min typ 62 25 4000 300 170 38 125 220 150 68 14 15 0.9 1.2 33 max Unit S m pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7057-001 6.5 0.5 1.5 0.4 4.6 2.6 0.4 4 7.3 1.7 2 0.5 1 0.8 2.3 2.3 3 9.5 0.55 0.7 0.6 4.6 0.4 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : ATPAK Switching Time Test Circuit VIN VDD=60V 0.1 10V 0V 6.05 Avalanche Resistance Test Circuit L VIN ID=20A RL=3 D VOUT ATP405 G 10V 0V ATP405 50 VDD 50 PW=10s D.C.1% P.G 50 S No. A1458-2/4 ATP405 Tc=25C VDS=10V 70 8 Drain Current, ID -- A 60 50 40 30 20 10 0 .0V 70 6.0 V Drain Current, ID -- A 4.5V 60 50 40 30 20 10 .0 V 25 C Tc= 7 VGS=4.0V 5C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 0.5 1.0 1.5 2.0 2.5 3.0 IT14604 0 --25 4.0 4.5 10 C Tc= -2 Drain-to-Source Voltage, VDS -- V 70 RDS(on) -- VGS Cutoff Voltage, VGS(off) -- V 70 RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- m 60 50 40 30 20 10 0 Static Drain-to-Source On-State Resistance, RDS(on) -- m ID=20A Single pulse Single pulse 60 50 40 30 20 10 0 --50 Tc=75C 25C --25C = V GS =2 , ID 10V 0A 2 3 4 5 6 7 8 9 10 IT14606 --25 0 25 50 75 100 Gate-to-Source Voltage, VGS -- V 2 | yfs | -- ID Case Temperature, Tc -- C 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 IS -- VSD Forward Transfer Admittance, | yfs | -- S VDS=10V 100 7 5 3 2 10 7 5 3 2 1.0 7 5 0.1 VGS=0V Single pulse Tc -2 =- C 5 C 75 Source Current, IS -- A C 25 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT14608 0 0.2 0.4 Tc= 7 0.6 --25 C 5C 25C 0.8 1.0 Drain Current, ID -- A 1000 7 SW Time -- ID Switching Time, SW Time -- ns 5 3 2 VDD=60V VGS=10V td(off) 10000 7 5 Ciss, Coss, Crss -- VDS Ciss Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- pF 3 2 1000 100 7 5 3 2 10 0.1 tf tr 7 5 3 2 100 7 td(on) Coss Crss 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 0 5 10 15 20 25 Drain Current, ID -- A IT14610 Drain-to-Source Voltage, VDS -- V No. A1458-3/4 5C 75 C 25C 5.0 IT14605 125 150 IT14607 1.2 IT14609 80 ID -- VDS 80 ID -- VGS(off) f=1MHz 30 IT14611 ATP405 10 9 VGS -- Qg VDS=60V ID=40A Drain Current, ID -- A 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 ASO IDP=160A ID=40A 10 PW10s ms Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 10 s 1m 10 s 0 s 10 0m s DC n tio era op 0.1 7 5 3 Tc=25C 2 Single pulse 0.01 0.01 2 3 5 7 0.1 Operation in this area is limited by RDS(on). 23 5 7 1.0 23 5 7 10 23 Total Gate Charge, Qg -- nC 80 PD -- Tc IT14612 120 Drain-to-Source Voltage, VDS -- V EAS -- Ta 5 7100 2 IT14613 Allowable Power Dissipation, PD -- W 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 Avalanche Energy derating factor -- % 100 80 60 40 20 0 0 25 50 75 100 125 150 175 IT14603 Case Temperature, Tc -- C IT14602 Ambient Temperature, Ta -- C Note on usage : Since the ATP405 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of April, 2009. Specifications and information herein are subject to change without notice. PS No. A1458-4/4 |
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