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| INCHANGE Semiconductor isc Product Specification 2SD557 isc Silicon NPN Power Transistor DESCRIPTION *High Current Capability *Collector-Emitter Breakdown Voltage: V(BR)CEO= 140V(Min.) *High Collector Power Dissipation APPLICATIONS *Designed for high power audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE 140 140 7 15 20 120 UNIT .cn mi e V V V A A IC Collector Current-Continuous ICM Collector Current-Peak Collector Power Dissipation @TC=25 Junction Temperature PC W Tj 150 Tstg Storage Temperature -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification 2SD557 isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.2A; IB= 0 140 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 16A; IB= 4A 2.0 V VBE(on) Base-Emitter On Voltage IC= 8A; VCE= 2V 1.5 V ICBO Collector Cutoff Current VCB= 140V; IE= 0 IEBO Emitter Cutoff Current hFE DC Current Gain w w scs .i w VEB= 7V; IC= 0 IC= 5A; VCE= 4V .cn mi e 30 2.0 mA 5.0 mA isc Websitewww.iscsemi.cn |
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