 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| VSK.26..PbF Series Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 27 A FEATURES * High voltage * Industrial standard package * Thick copper baseplate * UL E78996 approved * 3500 VRMS isolating voltage * Totally lead (Pb)-free * Designed and qualified for industrial level ADD-A-PAKTM RoHS COMPLIANT PRODUCT SUMMARY IT(AV) or IF(AV) 27 A BENEFITS * Up to 1600 V * Fully compatible TO-240AA * High surge capability * Easy mounting on heatsink * Al203 DBC insulator * Heatsink grounded MECHANICAL DESCRIPTION The Generation 5 of modules combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid copper baseplate at the bottom side of the device. The Cu baseplate allows an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improved thermal spread. The Generation 5 of AAP modules is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other Vishay HPP modules. ADD-A-PAKTM ELECTRICAL DESCRIPTION These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery chargers. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IT(AV) or IF(AV) IO(RMS) ITSM, IFSM I2 t I2t VRRM TStg TJ Range CHARACTERISTICS 85 C As AC switch 50 Hz 60 Hz 50 Hz 60 Hz VALUES 27 60 400 420 800 730 8000 400 to 1600 - 40 to 125 A2s V C A2s A UNITS Document Number: 94418 Revision: 22-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 VSK.26..PbF Series Vishay High Power Products ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 04 06 08 VSK.26 10 12 14 16 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 400 600 800 1000 1200 1400 1600 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 500 700 900 1100 1300 1500 1700 VDRM, MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE, GATE OPEN CIRCUIT V 400 600 800 1000 1200 1400 1600 15 IRRM, IDRM AT 125 C mA Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 27 A ON-STATE CONDUCTION PARAMETER Maximum average on-state current (thyristors) Maximum average forward current (diodes) Maximum continuous RMS on-state current as AC switch SYMBOL IT(AV) IF(AV) TEST CONDITIONS 180 conduction, half sine wave, TC = 85 C VALUES UNITS 27 IO(RMS) t = 10 ms t = 8.3 ms I(RMS) or I(RMS) 60 A 400 No voltage reapplied 100 % VRRM reapplied Maximum peak, one-cycle non-repetitive on-state or forward current ITSM or IFSM t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms Sinusoidal half wave, initial TJ = TJ maximum 420 335 350 470 490 800 730 560 510 1100 1000 8000 0.92 0.95 12.11 11.82 1.95 150 200 400 A2s V m V A/s A2s TJ = 25 C, no voltage reapplied No voltage reapplied 100 % VRRM reapplied Initial TJ = TJ maximum Maximum I2t for fusing I2t TJ = 25 C, no voltage reapplied Maximum I2t for fusing Maximum value or threshold voltage Maximum value of on-state slope resistance Maximum peak on-state or forward voltage Maximum non-repetitive rate of rise of turned on current Maximum holding current Maximum latching current I2t (1) VT(TO) (2) rt (2) VTM VFM dI/dt IH IL t = 0.1 to 10 ms, no voltage reapplied Low level (3) High level (4) Low level (3) High level (4) ITM = x IT(AV) IFM = x IF(AV) TJ = TJ maximum TJ = TJ maximum TJ = 25 C TJ = 25 C, from 0.67 VDRM, ITM = x IT(AV), Ig = 500 mA, tr < 0.5 s, tp > 6 s TJ = 25 C, anode supply = 6 V, resistive load, gate open circuit TJ = 25 C, anode supply = 6 V, resistive load (3) (4) mA Notes (1) I2t for time t = I2t x t x x (2) Average power = V 2 T(TO) x IT(AV) + rt x (IT(RMS)) www.vishay.com 2 16.7 % x x IAV < I < x IAV I > x IAV Document Number: 94418 Revision: 22-Apr-08 For technical questions, contact: ind-modules@vishay.com VSK.26..PbF Series Thyristor/Diode and Thyristor/Thyristor Vishay High Power Products TM Generation 5 Power Modules), 27 A (ADD-A-PAK TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage Maximum gate voltage required to trigger SYMBOL PGM PG(AV) IGM - VGM TJ = - 40 C VGT TJ = 25 C TJ = 125 C TJ = - 40 C Maximum gate current required to trigger Maximum gate voltage that will not trigger Maximum gate current that will not trigger IGT VGD IGD TJ = 25 C TJ = 125 C Anode supply = 6 V resistive load Anode supply = 6 V resistive load TEST CONDITIONS VALUES 10 2.5 2.5 10 4.0 2.5 1.7 270 150 80 0.25 6 V mA mA V UNITS W A TJ = 125 C, rated VDRM applied TJ = 125 C, rated VDRM applied BLOCKING PARAMETER Maximum peak reverse and off-state leakage current at VRRM, VDRM RMS insulation voltage Maximum critical rate of rise of off-state voltage SYMBOL IRRM, IDRM VINS dV/dt (1) TEST CONDITIONS TJ = 125 C, gate open circuit 50 Hz, circuit to base, all terminals shorted TJ = 125 C, linear to 0.67 VDRM VALUES 15 2500 (1 min) 3500 (1 s) 500 UNITS mA V V/s Note (1) Available with dV/dt = 1000 V/ms, to complete code add S90 i.e. VSKT26/16AS90 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Junction operating and storage temperature range Maximum internal thermal resistance, junction to case per module Typical thermal resistance, case to heatsink to heatsink Mounting torque 10 % busbar Approximate weight Case style JEDEC SYMBOL TJ, TStg RthJC RthCS DC operation Mounting surface flat, smooth and greased A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. TEST CONDITIONS VALUES - 40 to 125 0.31 K/W 0.1 5 Nm 3 110 4 TO-240AA g oz. UNITS C R CONDUCTION PER JUNCTION DEVICES VSK.26 SINE HALF WAVE CONDUCTION 180 0.23 120 0.27 90 0.34 60 0.48 30 0.73 180 0.17 RECTANGULAR WAVE CONDUCTION 120 0.28 90 0.36 60 0.49 30 0.73 UNITS C/W Note * Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 94418 Revision: 22-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 VSK.26..PbF Series Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 27 A Maximum Average On-state Power Loss (W) 70 60 50 40 30 Conduction Period Maximum Allowable Case T empera ture (C) 130 VSK.26.. S eries RthJC (DC) = 0.62 K/ W 120 110 DC 180 120 90 60 30 RMS Limit Conduction Angle 100 30 90 60 90 120 20 10 0 0 10 20 30 40 50 Average On-state Current (A) VSK.26.. S eries Per Junction TJ = 125C 180 80 0 5 10 15 20 25 30 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - On-State Power Loss Characteristics Maximum Allowable Cas T e empera ture (C) VSK.26.. S eries R thJC (DC) = 0.62 K/ W Peak Half S ine Wave On-s tate Current (A) 130 400 120 350 At Any Rated Load Condition And With Rated VRRM Applied Following S urge. Initial T = 125C J @60 Hz 0.0083 s @50 Hz 0.0100 s 110 Conduction Period 300 100 30 60 90 250 90 120 180 DC 40 50 200 VSK.26.. S eries Per Junc tion 150 1 10 100 Numb er Of E ual Amplitud e Half Cycle Current Pulses (N) q 80 0 10 20 30 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Ma ximum Average On-sta te Power Loss (W) 40 180 120 90 60 30 RMS Limit Peak Half S Wave On-state Current (A) ine 50 400 350 30 300 Ma ximum Non Repetitive S urge Current Versus Pulse T in Duration. Control ra Of Conduc tion May Not Be Maintained. Initial T = 125C J No Voltage Reap plied Rated VRRM R eapplied 20 Cond uction Angle 250 10 VSK.26.. S eries Per Junction TJ = 125C 0 5 10 15 20 25 30 200 VSK.26.. S eries Per Junction 150 0.01 0.1 Pulse T rain Duration (s) 1 0 Average On-state Current (A) Fig. 3 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 94418 Revision: 22-Apr-08 VSK.26..PbF Series Thyristor/Diode and Thyristor/Thyristor Vishay High Power Products TM Generation 5 Power Modules), 27 A (ADD-A-PAK 100 Maximum T otal On-s te Power Los (W) ta s R thSA 90 80 70 60 50 40 180 120 90 60 30 0.3 0.5 W K/ 7 0. W K/ 1 W K/ 1. 5 K/ W / KW = 0.1 K/ W lt a - De 2K /W R Conduction Angle 3K /W 4 K/ W 30 20 10 0 0 10 20 30 40 50 VSK.26.. Series Per Module TJ = 125C 8 K/ W 60 0 20 40 60 80 100 120 140 T otal RMSOutput Current (A) Maximum Allowable Ambient T emperature (C) Fig. 7 - On-State Power Loss Characteristics 250 S R th 0. 2 3 0. A Maximum T otal Power Loss (W) W K/ K/ W .1 =0 W K/ 200 0. 5 K/ W K/ W elt -D 150 100 180 (S ine) 180 (Rec t) 0.7 aR 1K /W 1.5 K/ W 3 K/ W 50 2 x VSK.26.. S eries S ingle Phase Bridge Connec ted TJ = 125C 0 10 20 30 40 50 8 K/ W 0 0 60 20 40 60 80 100 120 140 T otal Output Current (A) Maximum Allowable Ambient T emperature (C) Fig. 8 - On-State Power Loss Characteristics 350 R t hS 2 0. Maximum T otal Power Loss (W) 300 0. 3 A W K/ K/ W = W K/ 0.1 250 200 150 100 50 0 0 10 20 30 40 50 60 70 80 0 3 x VSK.26.. S eries T hree Phase Bridge Connected T = 125C J 120 (R t) ec 0. 4 0.5 0.7 elt -D K/ W a K/ W K/ W W R 1 K/ 1.5 K / W 3KW / 20 40 60 80 100 120 140 T otal Output Current (A) Maximum Allowable Ambient T emperature (C) Fig. 9 - On-State Power Loss Characteristics Document Number: 94418 Revision: 22-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 VSK.26..PbF Series Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 27 A 1000 Instanta neous On-s te Current (A) ta 100 TJ= 25C 10 TJ= 125C VSK.26.. S eries Per Junction 1 0 1 2 3 4 5 6 7 Instantaneous On-state Voltage (V) Fig. 10 - On-State Voltage Drop Characteristics T ransient Thermal Impedance Z thJC (K/W) 1 S teady S tate Value: R thJC = 0.62 K/ W (DC Operation) 0.1 VSK.26.. S eries 0.01 0.001 0.01 0.1 S quare Wave Pulse Duration (s) 1 10 Fig. 11 - Thermal Impedance ZthJC Characteristics 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a)Rec ommended load line for rated di/ dt: 20 V, 30 ohms tr = 0.5 s, tp >= 6 s b)Rec ommended load line for <= 30% rated d i/ dt: 20 V, 65 ohms 10 tr = 1 s, tp >= 6 s (1) PGM = 100 W, tp = 500 s (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms (a) (b ) T = 25 C J T = 125 C J T = -40 C J 1 VGD IGD 0.1 0.001 0.01 (4) (3) (2) (1) VSK.26.. S eries 0.1 1 Frequenc y Limited by PG(AV) 10 100 1000 Instantaneous Gate Current (A) Fig. 12 - Gate Characteristics www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 94418 Revision: 22-Apr-08 VSK.26..PbF Series Thyristor/Diode and Thyristor/Thyristor Vishay High Power Products TM Generation 5 Power Modules), 27 A (ADD-A-PAK ORDERING INFORMATION TABLE Device code VSK 1 1 2 3 4 5 6 (1) T 2 - 26 3 / 16 4 S90 5 P 6 Module type Circuit configuration (see end of datasheet) Current code (1) Voltage code (see Voltage Ratings table) dV/dt code: S90 = dV/dt 1000 V/s No letter = dV/dt 500 V/s P = Lead (Pb)-free Available with no auxiliary cathode (for details see dimensions - link at the end of datasheet) To specify change: 26 to 27 e.g.: VSKT27/16P etc. Note * To order the optional hardware go to www.vishay.com/doc?95172 CIRCUIT CONFIGURATION VSKT (1) ~ VSKH (1) ~ VSKL (1) ~ VSKN (1) - 1 1 1 1 2 + (2) 2 + (2) 2 + (2) 2 + (2) 3 45 76 45 3 3 76 45 3 (3) G1 K1 K2 G2 (4) (5) (7) (6) (3) G1 K1 (4) (5) (3) K2 G2 (7) (6) + (3) G1 K1 (4) (5) LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95085 Document Number: 94418 Revision: 22-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
Price & Availability of VSKT26
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |