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FDS8638 N-Channel PowerTrench(R) MOSFET
March 2009
FDS8638
N-Channel PowerTrench(R) MOSFET
40 V, 18 A, 4.3 m Features
Max rDS(on) = 4.3 m at VGS = 10 V, ID = 18 A Max rDS(on) = 5.4 m at VGS = 4.5 V, ID = 16 A High performance trench technology for extremely low rDS(on) 100% UIL Tested RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advance Power Trench(R) process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Applications
Synchronous Rectifier Load Switch
D D D D D D D SO-8 S Pin 1 S G S D 8 1S 5 6 7 4 G
3S 2S
MOSFET Maximum Ratings TA = 25 C unless otherwise noted
Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TA = 25 C TA = 25 C (Note 3) (Note 1a) (Note 1b) Ratings 40 20 18 100 541 2.5 1 -55 to +150 Units V V A mJ W C
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) 25 50 C/W
Package Marking and Ordering Information
Device Marking FDS8638 Device FDS8638 Package SO-8 Reel Size 13 " Tape Width 12 mm Quantity 2500 units
(c)2009 Fairchild Semiconductor Corporation FDS8638 Rev.C
1
www.fairchildsemi.com
FDS8638 N-Channel PowerTrench(R) MOSFET
Electrical Characteristics TJ = 25 C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 A, VGS = 0 V ID = 250 A, referenced to 25 C VDS = 32 V, VGS = 0 V VGS = 20 V, VDS = 0 V 40 32 1 100 V mV/C A nA
On Characteristics
VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 A ID = 250 A, referenced to 25 C VGS = 10 V, ID = 18 A VGS = 4.5 V, ID = 16 A VGS = 10 V, ID = 18 A, TJ = 125 C VDS = 5 V, ID = 18 A 1.0 1.9 -7 3.3 4.0 4.8 88 4.3 5.4 6.3 S m 3.0 V mV/C
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 4270 1175 120 0.9 5680 1560 180 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 0 V to 10 V VGS = 0 V to 4.5 V VDD = 20 V, ID = 18 A VDD = 20 V, ID = 18 A, VGS = 10 V, RGEN = 6 16 6 39 5 61 27 12 7.2 30 13 63 10 86 39 ns ns ns ns nC nC nC nC
Drain-Source Diode Characteristics
VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 18 A VGS = 0 V, IS = 2.1 A IF = 18 A, di/dt = 100 A/s (Note 2) (Note 2) 0.81 0.71 51 30 1.3 1.2 82 49 V ns nC
NOTES: 1. RJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 50 C/W when mounted on a 1 in2 pad of 2 oz copper.
b) 125 C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. Starting TJ = 25 C, L = 3 mH, IAS = 19 A, VDD = 40 V, VGS = 10 V.
(c)2009 Fairchild Semiconductor Corporation FDS8638 Rev.C
2
www.fairchildsemi.com
FDS8638 N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
100
VGS = 10 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
4.0
VGS = 3.5 V VGS = 4.5 V
3.5
VGS = 3 V
80
ID, DRAIN CURRENT (A)
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
3.0
VGS = 3.5 V
60
VGS = 4 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
2.5 2.0 1.5 1.0
VGS = 4.5 V VGS = 10 V VGS = 4 V
40 20 0 0.0
VGS = 3 V
0.5 0 20 40 60 80 100
ID, DRAIN CURRENT (A)
0.5
1.0
1.5
2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
1.6
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
20
SOURCE ON-RESISTANCE (m)
ID = 18 A VGS = 10 V
ID = 18 A
1.4 1.2 1.0 0.8 0.6 -75
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
15
rDS(on), DRAIN TO
10
TJ = 125 oC
5
TJ = 25 oC
-50
-25
0
25
50
75
100 125 150
0 2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance vs Junction Temperature
100
IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
Figure 4. On-Resistance vs Gate to Source Voltage
100
VGS = 0 V
80
ID, DRAIN CURRENT (A) VDS = 5 V
10
TJ = 150 oC
60
TJ = 150 oC
1
TJ = 25 oC
40
TJ = 25 oC
20
TJ = -55 oC
0.1
TJ = -55 oC
0 1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.01 0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
(c)2009 Fairchild Semiconductor Corporation FDS8638 Rev.C
3
www.fairchildsemi.com
FDS8638 N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
10
VGS, GATE TO SOURCE VOLTAGE (V) ID = 18 A
10000
Ciss
VDD = 20 V
8 6
VDD = 15 V VDD = 25 V CAPACITANCE (pF)
1000
Coss
4 2
Crss
100 0 0 10 20 30 40 50 60 70
Qg, GATE CHARGE (nC)
f = 1 MHz VGS = 0 V
50 0.1
1
10
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
20
ID, DRAIN CURRENT (A)
30
IAS, AVALANCHE CURRENT (A)
15
VGS = 10 V
10
TJ = 25 oC TJ = 100 oC TJ = 125 oC
10
VGS = 4.5 V
5
RJA = 50 C/W
o
1 0.01
0.1
1
10
100
1000
0 25
50
75
100
o
125
150
tAV, TIME IN AVALANCHE (ms)
TA, AMBIENT TEMPERATURE ( C)
Figure 9. Unclamped Inductive Switching Capability
200 100
ID, DRAIN CURRENT (A)
Figure 10. Maximum Continuous Drain Current vs Ambient Temperature
1000
P(PK), PEAK TRANSIENT POWER (W)
10
1 ms
VGS = 10 V
100
SINGLE PULSE RJA = 125 oC/W
10 ms
1
THIS AREA IS LIMITED BY rDS(on)
100 ms 1s 10 s DC
10
TC = 25 oC
0.1
SINGLE PULSE TJ = MAX RATED RJA = 125 oC/W TC = 25 oC
1 0.5 -3 10 10
-2
0.01 0.01
0.1
1
10
100 200
10
-1
1
10
100
1000
VDS, DRAIN to SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
(c)2009 Fairchild Semiconductor Corporation FDS8638 Rev.C
4
www.fairchildsemi.com
FDS8638 N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
2
1
NORMALIZED THERMAL IMPEDANCE, ZJA
DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
t1
0.01
SINGLE PULSE RJA = 125 C/W
(Note 1b)
o
t2 NTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA
-1
0.001 -3 10
10
-2
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
(c)2009 Fairchild Semiconductor Corporation FDS8638 Rev.C
5
www.fairchildsemi.com
FDS8638 N-Channel PowerTrench(R) MOSFET
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Rev. I39
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
(c)2009 Fairchild Semiconductor Corporation FDS8638 Rev.C
6
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