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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-3 package *High voltage APPLICATIONS *Designed for medium-to-high voltage Inverters,converters,regulators and switching circuits PINNING(see Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION MJ423 Fig.1 simplified outline (TO-3) and symbol Collector ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 400 325 5 10 2 125 -65~150 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. MJ423 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 325 V VCE(sat) VBE(sat) ICEX Collector-emitter saturation voltage IC=1A; IB=0.1A 0.8 V Base-emitter saturation voltage IC=1A; IB=0.1A VCE=400V; VEB(Off)=1.5V TC=125 VEB=5V; IC=0 1.25 0.25 0.5 5.0 V Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain IC=1A ; VCE=5V 30 90 hFE-2 DC current gain IC=2.5A ; VCE=5V 10 fT Transition frequency IC=0.2A ; VCE=10V;f=1.0MHz 2.5 MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJ423 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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