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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220Fa package High breakdown voltage High speed switching Wide area of safe operation APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SC3973 2SC3973A Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25ae ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO VEBO IC ICM IB INC Collector-emitter voltage E SEM ANG H 2SC3973 2SC3973A Open emitter OND IC CONDITIONS TOR UC VALUE 800 900 500 8 7 15 4 UNIT V Open base Open collector V V A A A Emitter-base voltage Collector current (DC) Collector current-Peak Base current TC=25ae 45 W 2 150 -55~150 ae ae PC Collector power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2SC3973 ICBO Collector cut-off current 2SC3973A IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain VCB=900V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=4A ; VCE=5V IC=0.5A ; VCE=10V CONDITIONS IC=10mA , IB=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=800V; IE=0 2SC3973 2SC3973A SYMBOL V(BR)CEO VCEsat VBEsat MIN 500 TYP. MAX UNIT V 1.0 1.5 V V 0.1 mA 0.1 15 8 mA Switching times ton ts tf Transition frequency CHA IN Turn-on time Storage time Fall time E SEM NG OND IC TOR UC 20 1.0 3.0 0.3 MHz |I |I |I s s s IC=4A; IB1=0.8A IB2=-1.6A;VCC=200V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3973 2SC3973A CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3973 2SC3973A CHA IN E SEM NG OND IC TOR UC 4 |
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