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FGPF50N30T 300V, 50A PDP IGBT
January 2008
FGPF50N30T
300V, 50A PDP IGBT
Features
* High current capability * Low saturation voltage: VCE(sat) =1.4V @ IC = 30A * High input impedance * Fast switching * RoHS compliant
tm
General Description
Using Novel Trench IGBT Technology, Fairchild's new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
Applications
* PDP System
C
TO-220F
1 1.Gate 2.Collector 3.Emitter
G
E
Absolute Maximum Ratings
Symbol
VCES VGES ICM (1) PD TJ Tstg TL
Description
Collector to Emitter Voltage Gate to Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds @ TC = 25oC @ TC = 25 C @ TC = 100oC
o
Ratings
300 30 120 46.8 18.7 -55 to +150 -55 to +150 300
Units
V V A W W
o o o
C C C
Thermal Characteristics
Symbol
RJC(IGBT) RJA
Parameter
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Typ.
-
Max.
2.67 62.5
Units
o o
C/W C/W
Notes: 1: Repetitive test , Pulse width=100usec , Duty=0.1 * IC_pluse limited by max Tj
(c)2008 Fairchild Semiconductor Corporation
1
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FGPF50N30T Rev. A
FGPF50N30T 300V, 50A PDP IGBT
Package Marking and Ordering Information
Device Marking
FGPF50N30T
Device
FGPF50N30TTU
Package
TO-220F
Packaging Type
Rail / Tube
Max Qty Qty per Tube
50ea
per Box
-
Electrical Characteristics of the IGBT
Symbol
Off Characteristics BVCES BVCES TJ ICES IGES
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250A VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
300 -
0.3 -
250 400
V V/oC A nA
On Characteristics VGE(th) G-E Threshold Voltage IC = 250A, VCE = VGE IC = 15A, VGE = 15V VCE(sat) Collector to Emitter Saturation Voltage IC = 30A, VGE = 15V IC = 50A, VGE = 15V, TC = 25oC IC = 50A, VGE = 15V, TC = 125oC Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 2320 92 80 pF pF pF 3.0 4.5 1.1 1.4 1.65 1.60 5.5 1.5 V V V V V
Switching Characteristics td(on) tr td(off) tf td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 200V, IC = 30A, VGE = 15V VCC = 200V, IC = 30A, RG = 15, VGE = 15V, Resistive Load, TC = 125oC VCC = 200V, IC = 30A, RG = 15, VGE = 15V, Resistive Load, TC = 25oC 31 78 156 200 30 78 163 260 97 15 41 300 ns ns ns ns ns ns ns ns nC nC nC
FGPF50N30T Rev. A
2
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FGPF50N30T 300V, 50A PDP IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
120
TC = 25 C
o
Figure 2. Typical Output Characteristics
120
TC = 125 C
o
20V 15V
20V 15V 12V 10V
Collector Current, IC [A]
10V
Collector Current, IC [A]
12V
80
80
40
VGE = 8V
40
VGE = 8V
0 0.0
1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V]
6.0
0 0.0
1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V]
6.0
Figure 3. Typical Saturation Voltage Characteristics
120 100
Collector Current, IC [A]
Common Emitter VGE = 15V TC = 25 C
Figure 4. Transfer Characteristics
120
Common Emitter VCE = 20V
Collector Current, IC [A]
o
TC = 25 C TC = 125 C
o
o
80 60 40 20 0 0
TC = 125 C
o
80
40
0
1 2 3 Collector-Emitter Voltage, VCE [V] 4
2
4
6 8 10 12 Gate-Emitter Voltage,VGE [V]
14
Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level
2.0
Collector-Emitter Voltage, VCE [V]
Common Emitter VGE = 15V
Figure 6. Saturation Voltage vs. VGE
20
Collector-Emitter Voltage, VCE [V]
Common Emitter TC = 25 C
o
1.8
50A
16
1.6 1.4 1.2
IC = 15A
12
30A
8
50A
1.0 0.8 25
4
30A IC = 15A
50 75 100 125 o Collector-EmitterCase Temperature, TC [ C]
0
0
4 8 12 16 Gate-Emitter Voltage, VGE [V]
20
FGPF50N30T Rev. A
3
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FGPF50N30T 300V, 50A PDP IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
Figure 8. Capacitance Characteristics
10000
Common Emitter VGE = 0V, f = 1MHz Cies TC = 25 C
o
Collector-Emitter Voltage, VCE [V]
TC = 125 C
o
16
Capacitance [pF]
12
1000
Coes
8
30A
Cres
4
IC = 15A
50A
100 20 50
0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V]
1
10 Collector-Emitter Voltage, VCE [V]
30
Figure 9. Gate charge Characteristics
15
Common Emitter TC = 25 C
o
Figure 10. SOA Characteristics
500 100
Collector Current, Ic [A]
10s 100s
Gate-Emitter Voltage, VGE [V]
12
VCC = 100V
9
200V
10
1ms 10 ms
6
1
DC
Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature
3
0.1
0 0 25 50 75 Gate Charge, Qg [nC] 100
0.01 0.1
1 10 100 Collector-Emitter Voltage, VCE [V]
500
Figure 11. Turn-on Characteristics vs. Gate Resistance
400
Figure 12. Turn-off Characteristics vs. Gate Resistance
5500
Common Emitter VCC = 200V, VGE = 15V IC = 30A
Switching Time [ns]
Switching Time [ns]
tr
1000
TC = 25 C TC = 125 C
o
o
td(off)
100
tf
td(on)
Common Emitter VCC = 200V, VGE = 15V IC = 30A TC = 25 C TC = 125 C
o o
100
10 0 20 40 60 80 Gate Resistance, RG [] 100
10 0 20 40 60 80 100
Gate Resistance, RG []
FGPF50N30T Rev. A
4
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FGPF50N30T 300V, 50A PDP IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs. Collector Current
1000
Common Emitter VGE = 15V, RG = 15 TC = 25 C
o o
Figure 14. Turn-off Characteristics vs. Collector Current
500
Common Emitter VGE = 15V, RG = 15 TC = 25 C
o o
Switching Time [ns]
Switching Time [ns]
TC = 125 C tr
TC = 125 C tf
100
td(on)
td(off)
10 10
20
30
40
50
100 10
20
30
40
50
Collector Current, IC [A]
Collector Current, IC [A]
Figure 15. Switching Loss vs. Gate Resistance
2000
Common Emitter VCC = 200V, VGE = 15V
Figure 16. Switching Loss vs.Gate Resistance
3000
Common Emitter VGE = 15V, RG = 15 TC = 25 C TC = 125 C
o o
1000
Switching Loss [J]
IC = 30A
o
TC = 125 C
Eoff
Switching Loss [J]
TC = 25 C
o
1000
Eoff
Eon
Eon
100
100
0
20
40 60 80 Gate Resistance, RG []
100
30 10
20
30
40
50
Collector Current, IC [A]
Figure 17.Transient Thermal Impedance of IGBT
10
Thermal Response [Zthjc]
1
0.5 0.2 0.1
0.1 0.05
0.02 0.01
PDM t1 t2
0.01
single pulse
Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC
1E-3 1E-5
1E-4
1E-3
0.01
0.1
1
10
100
Rectangular Pulse Duration [sec]
FGPF50N30T Rev. A
5
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FGPF50N30T 300V, 50A PDP IGBT
Mechanical Dimensions
TO-220F
3.30 0.10
10.16 0.20 (7.00)
o3.18 0.10
2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47
9.75 0.30
0.80 0.10
(3 0 )
0.35 0.10 2.54TYP [2.54 0.20]
#1 0.50 -0.05 2.54TYP [2.54 0.20]
4.70 0.20
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
FGPF50N30T Rev. A
6
15.87 0.20
www.fairchildsemi.com
FGPF50N30T 300V, 50A PDP IGBT
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EZSWITCHTM *
TM
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Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) *
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PDP-SPMTM Power220(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8
SupreMOSTM SyncFETTM (R) The Power Franchise(R)
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TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM
* EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I33
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
FGPF50N30T Rev. A
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