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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1025 DESCRIPTION With TO-220 package High DC current gain DARLINGTON PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg TOR NDU ICO E SEM ANG INCH PARAMETER CONDITIONS VALUE 200 Collector-base voltage Open emitter Collector-emitter voltage Open base 200 7 Emitter-base voltage Open collector Collector current 8 Collector current-Peak 12 Base current 0.5 Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25ae 1.0 50 150 -55~150 UNIT V V V A A A A W ae ae THERMAL CHARACTERISTICS SYMBOL R| j-C PARAMETER Thermal resistance junction to case VALUE 2.5 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.1A ; IB=0 IC=5A; IB=10mA IC=5A ;IB=10mA VCB=200V ;IE=0 VCE=200V; IB=0 VEB=7V; IC=0 IC=5A ; VCE=3V IC=0.8A ; VCE=10V 1500 20 MIN 200 TYP. 2SD1025 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE fT MAX UNIT V 1.5 2.0 0.1 0.1 5.0 30000 V V mA mA mA Switching times ton ts tf TOR NDU ICO E SEM ANG INCH Turn-on time Storage time 2.0 IC=5A IB1=- IB2=10mA RL=5| ; VBB2=4V 8.0 Fall time 5.0 MHz |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1025 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 |
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