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SMBJ26 B0505 2SC46 AD5624 F223K B0000 BU8877 WRB0512
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 SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1223
DESCRIPTION *With TO-220F package *Complement to type 2SD1825 *High DC current gain. *Large current capacity and wide ASO. *DARLINGTON APPLICATIONS *Suitable for use in control of motor drivers, printer hammer drivers,and constant-voltage regulators. PINNING
PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -70 -60 -6 -4 -6 20 W UNIT V V V A A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-5mA; IE=0 IC=-50mA; RBE=@ IC=-2A ; IB=-4mA IC=-2A ; IB=-4mA VCB=-40V;IE=0 VEB=-5V;IC=0 IC=-2A ; VCE=-2V IC=-2A ; VCE=-5V 2000 MIN -70 -60
2SB1223
SYMBOL V(BR)CBO V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT
TYP.
MAX
UNIT V V
-1.0
-1.5 -2.0 -0.1 -3.0
V V mA mA
5000 20 MHz
Switching times ton tstg tf Turn-on time Storage time Fall time IC=500IB1=-500IB2=-2A VCC=-20V ,RL=10D 0.5 1.4 1.2 s s s
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1223
Fig.2 Outline dimensions
3


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