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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3322 DESCRIPTION With TO-3P(I) package High voltage High speed APPLICATIONS High power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg Collector-base voltage PARAMETER CHA IN Collector current Base current Collector-emitter voltage Emitter-base voltage ES NG Open emitter Open base MIC E CONDITIONS OND TOR UC VALUE 900 800 7 5 10 2.5 UNIT V V V A A A W ae ae Open collector Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25ae 80 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Base-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=0.2A ,L=100mH;RBE= IE=10mA; IC=0 IC=1.5A; IB=0.3A IC=1.5A; IB=0.3A VCB=750V; IE=0 VCE=650V; RBE= IC=0.5A ; VCE=5V IC=3A ; VCE=5V 15 7 MIN 800 7 TYP. 2SC3322 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBE sat ICBO ICEO hFE-1 hFE-2 MAX UNIT V V 1.0 1.5 100 100 |I |I V V A A Switching times ton tstg tf Fall time Turn-on time CHA IN Storage time E SEM NG OND IC TOR UC 1.0 3.0 1.0 |I |I |I s s s IC=3A ; VCCO 250V IB1=0.6A; IB2=-1.5A 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3322 CHA IN E SEM NG OND IC 0.10 mm) TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 3 |
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