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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2151 DESCRIPTION With TO-220Fa package Low collector to emitter saturation voltage Large collector current IC APPLICATIONS For power switching applicaitons PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 130 80 7 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Collector current Collector current-peak TC=25ae Open collector 10 20 30 Collector power dissipation Ta=25ae 2 150 -55~150 UNIT V V V A A PC W Tj Tstg Junction temperature Storage temperature ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=10mA, IB=0 IC=6A; IB=0.3A IC=10A; IB=1A IC=6A; IB=0.3A IC=10A; IB=1A VCB=100V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=2V IC=3A ; VCE=2V IC=6A ; VCE=2V 45 MIN 80 2SD2151 SYMBOL V(BR)CEO VCEsat-1 VCEsat-2 VBE sat-1 VBE sat-2 ICBO IEBO hFE-1 hFE-2 hFE-3 fT TYP. MAX UNIT V 0.5 1.5 1.5 2.5 10 50 |I |I V V V V A A Switching times ton ts tf TOR NDU ICO E SEM ANG INCH 90 30 Transition frequency IC=0.5A ; VCE=10V;f=1MHz 20 Turn-on time Storage time Fall time IC=6A ;IB1=-IB2=0.6A VCC=50V 0.5 2.0 0.2 260 MHz |I |I |I s s s hFE-2 Classifications Q 90-180 P 130-260 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2151 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 |
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