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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1559 DESCRIPTION With TO-3P(I) package Complement to type 2SB1079 DARLINGTON APPLICATIONS For low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER CHA IN Collector current Base current Collector-base voltage Collector-emitter voltage E SEM NG Open emitter Open base OND IC CONDITIONS TOR UC VALUE 100 100 7 20 30 3 UNIT V V V A A A W ae ae Emitter-base voltage Open collector Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae 100 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain CONDITIONS IC=25mA ,RBE= IC=0.1mA ,IE=0 IE=50mA ,IC=0 IC=10A; IB=20mA IC=20A; IB=200mA IC=10A; IB=20mA IC=20A; IB=200mA VCB=100V; IE=0 VCE=80V; RBE= MIN 100 100 7 TYP. 2SD1559 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat-1 VCEsat -2 VBE sat-1 VBE sat-2 ICBO ICEO hFE MAX UNIT V V V 2.0 3.0 2.5 3.5 V V V V |I A mA Switching times ton tstg tf CHA IN Turn-on time Storage time Fall time E SEM NG IC=10A ; VCE=3V OND IC TOR UC 100 1.0 20000 1.0 1000 |I |I |I s s s IC=10A; IB1=-IB2=20mA 9.0 3.0 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1559 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 |
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