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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1366 DESCRIPTION With TO-220F package Complement to type 2SD2058 Low collector saturation voltage: VCE(SAT)=-1.0V(Max) at IC=-2A,IB=-0.2A Collector power dissipation: PC=25W(TC=25ae ) APPLICATIONS With general purpose applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB HAN C PARAMETER Open emitter Open base Fig.1 simplified outline (TO-220F) and symbol IN Collector-base voltage SEM GE Open collector CONDITIONS OND IC TOR UC VALUE -60 -60 -7 -3 -0.5 UNIT V V V A A Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25ae PC Collector dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 2.0 W 25 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-50mA ;IB=0 IC=-2A ;IB=-0.2A IC=-0.5A;VCE=-5V VCB=-60V; IE=0 VEB=-7V; IC=0 IC=-0.5A ; VCE=-5V IC=-3A ; VCE=-5V IC=-0.5A ; VCE=-5V f=1MHz;VCB=-10V 60 20 MIN -60 2SB1366 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V -1.0 -1.0 -0.1 -0.1 200 V V mA mA Switching times ton ts tf Fall time Collector output capacitance 9.0 MHz pF Turn-on time Storage time HAN INC Y 100-200 SEM GE IC=-2.0A IB1=-IB2=-0.2A VCC=-30V ,RL=15| OND IC TOR UC 150 0.4 1.7 0.5 |I |I |I s s s hFE-1 Classifications O 60-120 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1366 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1366 SEM GE HAN INC OND IC TOR UC 4 |
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