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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1276 2SD1276A DESCRIPTION With TO-220Fa package Complement to type 2SB950/950A High DC current gain High-speed switching APPLICATIONS For power amplification PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25ae ) SYMBOL PARAMETER VCBO VCEO CHA IN Collector-base voltage E SEM NG 2SD1276 2SD1276A 2SD1276 2SD1276A OND IC CONDITIONS TOR UC VALUE 60 80 60 UNIT Open emitter V Collector-emitter voltage Open base 80 Open collector 5 4 8 TC=25ae 40 V VEBO IC ICM Emitter-base voltage Collector current (DC) Collector current-Peak V A A PC Collector power dissipation Ta=25ae 2 150 -55~150 ae ae W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1276 2SD1276A CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage 2SD1276 IC=30mA , IB=0 2SD1276A IC=3A ;IB=12mA IC=5A ;IB=20mA VCE=3V; IC=3A 2SD1276 2SD1276A 2SD1276 2SD1276A VCB=60V ;IE=0 0.2 VCB=80V; IE=0 VCE=30V; IB=0 0.5 VCE=40V; IB=0 VEB=5V; IC=0 mA mA 80 2 4 2.5 V V V CONDITIONS MIN 60 V TYP. MAX UNIT SYMBOL V(BR)CEO VCEsat-1 VCEsatVBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current ICBO ICEO Collector cut-off current Emitter cut-off current IEBO hFE-1 hFE-2 fT DC current gain DC current gain Switching times ton ts tf INC Fall time Transition frequency E SEM ANG H IC=3A ; VCE=0.5V IC=3A ; VCE=3V OND IC 1000 TOR UC 2 10000 20 mA 2000 IC=0.5A; VCE=10V;f=1MHz MHz Turn-on time Storage time IC=2A ;IB1=8mA IB2=-8mA;VCC=50V 0.5 4 1 |I |I |I s s s hFE-2 Classifications Q 2000-5000 R 4000-10000 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1276 2SD1276A PACKAGE OUTLINE CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 |
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