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HTT1129E
Silicon NPN Epitaxial Twin Transistor
REJ03G0840-0200 (Previous ADE-208-1541A) Rev.2.00 Aug.10.2005
Features
* Include 2 transistors in a small size SMD package: EMFPAK-6 (6 Leads: 1.2 x 0.8 x 0.5 mm)
Q1: Equivalent Buffer transistor 2SC5849 2SC5872 Q2: Equivalent OSC transistor
Outline
RENESAS Package code: PXSF0006LA-A (Package name: EMFPAK-6)
Pin Arrangement
6
5
4
B1 6
Q1
E2 5
Q2
B2 4
1. Collector Q1 2. Emitter Q1 3. Collector Q2 4. Base Q2 5. Emitter Q2 6. Base Q1
1
2
3
C1
1
E1
2
C2
3
Note:
Marking is "Z".
Rev.2.00 Aug 10, 2005 page 1 of 8
HTT1129E
Absolute Maximum Ratings
(Ta = 25C)
Item Symbol Ratings Q1 15 6 1.5 80 Q2 15 6 0.8 50 Unit V V V mA mW C C
Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current IC Collector power dissipation PC Junction temperature Tj Storage temperature Tstg Note: *Value on PCB. (FR-4 (13 x 13 x 0.635 mm)).
Total 200* 150 150 -55 to +150 -50 to +150
Collector Power Dissipation Curve
Collector Power Dissipation Pc* (mW)
250 200
*Value on PCB. (FR-4 (13 x13 x 0.635 mm)) 2 devices total
150
100
50
0
50
100
150
200
Ambient temperature Ta (C)
Rev.2.00 Aug 10, 2005 page 2 of 8
HTT1129E
Q1 Electrical Characteristics
(Ta = 25C)
Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Reverse transfer capacitance Gain bandwidth product Forward transfer coefficient Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE Cre fT |S21|2 NF Min 15 90 2 7 Typ 120 0.50 4 11 1.7 Max 0.1 0.1 0.1 140 0.65 2.3 Unit V A A A pF GHz dB dB Test conditions IC = 10 A, IE = 0 VCB = 15 V, IE = 0 VCE = 6 V, RBE = infinite VEB = 1.5 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, f = 1 MHz Emitter ground VCE = 1 V, IC = 5 mA, f = 1 GHz VCE = 1 V, IC = 5 mA, f = 900 MHz, S = L = 50
Q2 Electrical Characteristics
(Ta = 25C)
Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Reverse transfer capacitance Gain bandwidth product Forward transfer coefficient Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE Cre fT |S21|2 NF Min 16 90 8 13 Typ 120 0.25 10 16 1.0 Max 0.1 0.1 0.1 140 0.35 1.6 Unit V A A A pF GHz dB dB Test conditions IC = 10 A, IE = 0 VCB = 15 V, IE = 0 VCE = 6 V, RBE = infinite VEB = 0.8 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, f = 1 MHz Emitter ground VCE = 1 V, IC = 5 mA, f = 1 GHz VCE = 1 V, IC = 5 mA, f = 900 MHz S = L = 50
Rev.2.00 Aug 10, 2005 page 3 of 8
HTT1129E
Q1 Main Characteristics
Typical Output Characteristics
20
180 A
Typical Forward Transfer Characteristics
25
160 A
Collector Current IC (mA)
Collector Current IC (mA)
16 12
140 A
120 A
VCE = 1 V 20
100 A
15
80 A
8
60 A
10
40 A
4
IB = 20 A
5
0
1
2
3
4
5
6
0
0.2
0.4
0.6
0.8
1.0
Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current
Base to Emitter Voltage VBE (V)
Reverse Transfer Capacitance vs. Collector to Base Voltage
Reverse Transfer Capacitance Cre (pF)
200
1.0
DC Current Transfer Ratio hFE
VCE = 1 V
Emitter ground f = 1 MHz 0.8 0.6
100
0.4
0.2
0 0.1
1.0
10
100
0
0.5
1.0
1.5
2.0
Collector Current IC (mA)
Collector to Base Voltage VCB (V)
Gain Bandwidth Product vs. Collector Current
20
Noise Figure vs. Collector Current
5 VCE = 1 V f = 900 MHz
Gain Bandwidth Product fT (GHz)
f = 1 GHz 16
VCE = 3 V
4
12
Noise Figure NF (dB)
VCE = 2 V
3
8
2
4
VCE = 1 V
1
0 1
2
5
10
20
50
100
0 1 2 5 10 20 50 100
Collector Current IC (mA)
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 4 of 8
HTT1129E
S21 Parameter vs. Collector Current
20
f = 1 GHz
S21 Parameter |S21|2 (dB)
16
VCE = 2 V
12
VCE = 1 V
8
4
0 1
2
5
10
20
50
100
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 5 of 8
HTT1129E
Q2 Main Characteristics
Typical Output Characteristics
20
Typical Forward Transfer Characteristics
50
160 A
Collector Current IC (mA)
Collector Current IC (mA)
140 A
120 A
VCE = 1 V 40
16 12
100 A
30
80 A
8
60 A
20
40 A
4
IB = 20 A
10
0
1
2
3
4
5
6
0
0.2
0.4
0.6
0.8
1.0
Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current
200
Base to Emitter Voltage VBE (V)
Reverse Transfer Capacitance vs. Collector to Base Voltage
Reverse Transfer Capacitance Cre (pF)
0.4 Emitter ground f = 1 MHz 0.3
DC Current Transfer Ratio hFE
VCE = 1 V
100
0.2
0.1
0 0.1
1.0
10
100
0
0.5
1.0
1.5
2.0
Collector Current
IC (mA)
Collector to Base Voltage
VCB (V)
Gain Bandwidth Product vs. Collector Current
20
Noise Figure vs. Collector Current
8 f = 900 MHz
VCE = 1 V
Gain Bandwidth Product fT (GHz)
f = 1 GHz
7
Noise Figure NF (dB)
16
VCE = 3 V
6 5 4
3
2 VCE = 2 V
12
8 4
VCE = 1 V
1
2 5 10 20 50 100
VCE = 3 V
0 1
0 1
2
5
10
20
50
100
Collector Current IC (mA)
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 6 of 8
HTT1129E
S21 Parameter vs. Collector Current
20 f = 900MHz
VCE = 3 V
S21 Parameter |S21|2 (dB)
16
12
8
VCE = 1 V
4 0 1
2
5
10
20
50
100
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 7 of 8
HTT1129E
Package Dimensions
JEITA Package Code 3/4 RENESAS Code PXSF0006LA-A Package Name EMFPAK-6 / EMFPAK-6V MASS[Typ.] 0.0012g
D e
A c LP
E
HE
A
A b
L A e
xM S
Reference Symbol
Dimension in Millimeters
A2
A
yS b b1 c
A1 S I1 c1
e1
b2 A-A Section Pattern of terminal position areas
A A1 A2 b b1 c c1 D E e HE L LP x y b2 e1 I1
Min 0.45 0 0.45 0.1 0.1 1.15 0.75 0.95 0.05 0.1
Nom
0.17 0.15 0.13 0.11 1.2 0.8 0.4 1.0 0.1
Max 0.5 0.01 0.49 0.25 0.15 1.25 0.85 1.05 0.15 0.3 0.05 0.05 0.3 0.35
0.7
Ordering Information
Part Name HTT1129EZTL-E Quantity 5000 Shipping Container 178 mm Reel, 8 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Aug 10, 2005 page 8 of 8
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
http://www.renesas.com
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
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