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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1353 DESCRIPTION *Good Linearity of hFE * Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min) *Complement to Type 2SD2033 APPLICATIONS *Designed for use in high voltage driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25 -1.5 A 1.8 W PC Collector Power Dissipation @TC=25 TJ Junction Temperature 20 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SB1353 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA; IE= 0 -120 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 -120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -0.1mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A B -2.0 V ICBO Collector Cutoff Current VCB= -120V; IE= 0 -10 A IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -10 A hFE DC Current Cain IC= -0.1A ; VCE= -5V 60 320 fT Current-Gain--Bandwidth Product IC= -0.1A ; VCE= -5V 50 MHz hFE Classifications D 60-120 E 100-200 F 160-320 isc Websitewww.iscsemi.cn 2 |
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