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| SMD Type Epitaxial Planar PNP Transistor KTA1504S-Y SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 Collector Current: IC=-150mA +0.1 1.3-0.1 Collector Power Dissipation: PC=150mW 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base +0.1 0.38-0.1 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCEO VCBO VEBO IC PC Tj Tstg Rating -50 -50 -5 -150 150 150 -55 to 150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure Symbol Test conditions Min -50 -50 -5 -0.1 -0.1 120 -0.1 80 4.0 1.0 7.0 10 240 -0.3 V MHz pF dB Typ Max Unit V V V V(BR)CBO IC=-100A,IE=0 V(BR)CEO IC=-1mA,IB=0 V(BR)EBO IE=-100A,IC=0 ICBO IEBO hFE VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2mA 0-0.1 A A VCE(sat) IC=-100mA, IB=-10mA fT Cob NF VCE=-10V, IC=-1mA VCB=-10V, IE=0, f=1MHz VCE=-6V, IC=-0.1mA,f=1kHz, Rg=10K www.kexin.com.cn 1 |
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