 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| New Product SUM110N04-2M1P Vishay Siliconix N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) () 0.0021 at VGS = 10 V 0.0024 at VGS = 4.5 V ID (A)a, c 110 110 Qg (Typ.) 240 nC FEATURES * TrenchFET(R) Power MOSFET * 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS * Synchronous Rectification * Power Supplies D TO-263 G G DS S N-Channel MOSFET Top View Ordering Information: SUM110N04-2M1P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C Continuous Drain Current (TJ = 175 C) TC = 70 C TA = 25 C TA = 70 C Pulsed Drain Current Avalanche Current Pulse Single Pulse Avalanche Energy Continuous Source-Drain Diode Current L = 0.1 mH TC = 25 C TA = 25 C TC = 25 C Maximum Power Dissipation TC = 70 C TA = 25 C TA = 70 C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IAS EAS IS ID Symbol VDS VGS Limit 40 20 110a, c 110c 29b 23b 250 80 320 110 a, c Unit V A V A 2.6b 312a 200 3.13b 2.0b - 55 to 150 W C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Case Steady State Steady State Symbol RthJA RthJC Typical 32 0.33 Maximum 40 0.4 Unit C/W Notes: a. Based on TC = 25 C. b. Surface Mounted on 1" x 1" FR4 board. c. Calculated based on maximum junction temperature. Package limitation current is 110 A. Document Number: 69983 S-80680-Rev. A, 31-Mar-08 www.vishay.com 1 New Product SUM110N04-2M1P Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = 20 A, di/dt = 100 A/s, TJ = 25 C IS = 20 A 0.8 50 70 30 20 TC = 25 C 110 200 1.2 75 105 A V ns nC ns Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = 20 V, RL = 1.0 ID 20 A, VGEN = 4.5 V, Rg = 1 VDD = 20 V, RL = 1.0 ID 20 A, VGEN = 10 V, Rg = 1 f = 1 MHz VDS = 20 V, VGS = 10 V, ID = 20 A VDS = 20 V, VGS = 0 V, f = 1 MHz 18800 1550 850 240 40 22 0.85 20 11 77 10 102 62 180 60 1.3 30 17 115 15 155 95 270 90 ns 360 nC pF VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 A ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 40 V, VGS = 0 V VDS = 40 V, VGS = 0 V, TJ = 55 C VDS 5 V, VGS = 10 V VGS = 10 V, ID = 30 A VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 30 A 120 0.0017 0.002 180 0.0021 0.0024 1.2 40 41 -8 2.5 100 1 10 V mV/C V nA A A S Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69983 S-80680-Rev. A, 31-Mar-08 New Product SUM110N04-2M1P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 250 VGS = 10 thru 5 V 200 I D - Drain Current (A) I D - Drain Current (A) 4 5 150 VGS = 4 V 100 VGS = 3 V 50 3 TC = 125 C 2 TC = 25 C 1 TC = - 55 C 0 0.0 0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 400 TC = - 55 C R DS(on) - On-Resistance () 320 g fs - Transconductance (S) 0.0032 0.0040 Transfer Characteristics 240 TC = 25 C 160 TC = 125 C 0.0024 VGS = 4.5 V 0.0016 VGS = 10 V 80 0.0008 0 0 15 30 45 60 75 90 0.0000 0 20 40 60 80 100 120 ID - Drain Current (A) ID - Drain Current (A) Transconductance 24000 Ciss C - Capacitance (pF) 10 On-Resistance vs. Drain Current ID = 20 A VGS - Gate-to-Source Voltage (V) 8 VDS = 20 V 6 VDS = 10 V 4 VDS = 30 V 16000 8000 Coss Crss 0 10 20 30 40 2 0 0 0 50 100 150 200 250 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Document Number: 69983 S-80680-Rev. A, 31-Mar-08 Gate Charge www.vishay.com 3 New Product SUM110N04-2M1P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2.0 ID = 30 A 1.7 R DS(on) - On-Resistance I S - Source Current (A) VGS = 10 V (Normalized) 1.4 VGS = 4.5 V 1.1 10 TJ = 150 C 1 TJ = 25 C 100 0.1 0.8 0.01 0.5 - 50 - 25 0 25 50 75 100 125 150 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature 0.010 0.6 Forward Diode Voltage vs. Temperature R DS(on) - On-Resistance () 0.008 0.2 0.006 VGS(th) Variance (V) - 0.2 ID = 5 mA 0.004 TJ = 150 C - 0.6 0.002 TJ = 25 C 0.000 0 2 4 6 8 10 - 1.0 - 50 - 25 0 25 50 ID = 250 A 75 100 125 150 VGS - Gate-to-Source Voltage (V) TJ - Temperature (C) On-Resistance vs. Gate-to-Source Voltage 1000 Limited by RDS(on)* 100 I D - Drain Current (A) 10 s 100 s 1 ms 10 ms 100 ms, DC Threshold Voltage 10 1 0.1 TC = 25 C Single Pulse BVDSS 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 69983 S-80680-Rev. A, 31-Mar-08 New Product SUM110N04-2M1P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 350 400 350 280 300 I D - Drain Current (A) 210 Power (W) 100 125 150 250 200 150 100 70 50 0 0 25 50 75 0 0 25 50 75 100 125 150 140 Package Limited TJ - Junction to Case (C) TJ - Junction to Case (C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69983. Document Number: 69983 S-80680-Rev. A, 31-Mar-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
Price & Availability of SUM110N04-2M1P
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |