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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3PN package Respectively complement to type MJE4350/4351/4352/4353 DC current gain hFE=8(Min)@IC=16A APPLICATIONS For use in high power audio amplifier and switching regulator circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJE4340/4341/4342/4343 Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=ae ) SYMBOL VCBO Collector-base voltage PARAMETER CONDITIONS INC VCEO VEBO IC ICM IB PC Tj Tstg E SEM ANG H MJE4341 MJE4342 Open emitter MJE4343 MJE4340 MJE4341 Open base MJE4342 MJE4343 Open collector MJE4340 OND IC TOR UC VALUE 100 120 140 160 100 120 UNIT V Collector-emitter voltage V 140 160 7 16 20 5 V A A A W ae ae Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25ae 125 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.0 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER MJE4340 MJE4341 IC=100mA ;IB=0 MJE4342 MJE4343 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage MJE4340 IC=8A ;IB=0.8A IC=16A; IB=2.0A IC=16A; IB=2.0A IC=16A ; VCE=4V VCE=50V; IB=0 VCE=60V; IB=0 VCE=70V; IB=0 VCE=80V; IB=0 MJE4340/4341/4342/4343 SYMBOL CONDITIONS MIN 100 120 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 140 160 2.0 3.5 3.9 3.9 V V V V ICEO Collector cut-off current MJE4341 MJE4342 ICEX ICBO IEBO hFE-1 hFE-2 COB fT CHA IN Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency Collector cut-off current Collector cut-off current E SEM NG MJE4343 VEB=7V; IC=0 OND IC TOR UC 0.75 1.0 5.0 0.75 1.0 mA VCE=RatedVCBO; VBE=1.5V TC=150ae VCB=RatedVCB; IE=0 mA mA mA IC=8A ; VCE=2V IC=16A ; VCE=4V IE=0 ; VCB=10V;f=0.1MHz IC=-1A ; VCE=20V;f=0.5MHz 15 8 800 1.0 pF MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJE4340/4341/4342/4343 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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