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FD6M016N03 30V/80A Synchronous Rectifier Module
FD6M016N03
30V/80A Synchronous Rectifier Module
General Features
* Very High Rectification Efficiency at Output 12V * Integrated Solution for Saving Board Space * RoHS Compliant
Power-SPMTM
tm
June 2008
General Description
The FD6M016N03 is one product in the Power-SPMTM family that Fairchild has newly developed and designed to be most suitable for more compact and more efficient synchronous rectification applications such as internet server power supplies and telecom system power supplies. For higher efficiency, it includes built-in very low RDS(ON) MOSFETs. This Power-SPM device can be used in the secondary side of the PWM transformer of forward/bridge converter to provide high current rectification at output voltages ranging from 12 Volts down to 5 Volts. With this product, it is possible to design the secondary side of power supply systems with reduced parasitic elements resulting in minimized voltage spike and EMI noise.
MOSFET Features
* VDSS = 30V * QG(TOTAL) = 132nC(Typ.), VGS = 5V * RDS(ON) = 1.3m(Typ.), VGS = 10V, ID = 40A * Low Miller Charge * Low Qrr Body Diode * UIS Capability (Single Pulse and Repetitive Pulse) * Fully Isolated package
Applications
* High Current Isolated Converter * Distributed Power Architectures * Synchronous rectifivation * DC/DC Converter * Battery supplied application * ORing MOSFET
1
15
EPM15 Package
Block Diagram
10
G2 D2
9 15
8
G1
14 13
S2
6
12 7 11
D1
S1
1
2
3
4
5
Figure 1. FD6M016N03 Module Block Diagram
(c)2008 Fairchild Semiconductor Corporation
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FD6M016N03 Rev. A
FD6M016N03 30V/80A Synchronous Rectifier Module
Pin Configuration and Pin Description
Top View
D1
S1
G1 NC
NC NC
G2
S2
D2
Figure 2. Pinmap of FD6M016N03
Pin Number
1 2~5 6 7 8 9 10 11 ~ 14 15
Pin Name
D1 S1 G1 NC NC NC G2 S2 D2
Pin Description
Drain of Q1, MOSFET Source of Q1, MOSFET Gate of Q1, MOSFET No Connection No Connection No Connection Gate of Q2, MOSFET Source of Q2, MOSFET Drain of Q2, MOSFET
Absolute Maximum Ratings TC = 25C,
Symbol VDS VGS ID EAS TJ, TSTG Drain to Source Voltage Gate to Source Voltage
Unless Otherwise Specified Rating
(Note1)
Parameter
Unit V V A mJ C
30 20 80 1584 -40 ~ 150
Drain Current, Continuous (VGS = 10V) Single Pulse Avalanche Energy Operating and Storage Temperature Range
(Note1) (Note1,2)
Thermal Resistance
Symbol RJC
Note: 1. Each MOSFET Switch 2. Starting TJ = 25C, VD = 20V, L = 0.25mH, IAS = 65A
Parameter Junction to Case Thermal Resistance
(Note1)
Min. -
Typ. -
Max. 3.9
Unit C/W
FD6M016N03 Rev. A
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FD6M016N03 30V/80A Synchronous Rectifier Module
Electrical Characteristics TC = 25C, Unless Otherwise Specified
Symbol Parameter Test Conditions Min. Typ. Max. Units
Synchronous Rectifier Switch Part (Each Switch)
BVDSS IDSS IGSS VGS(TH) RDS(ON) Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Gate Threshold Voltage Drain to Source On Resistance ID= 250A, VGS = 0V VGS = 0V, VDS = 24V VGS = 20V VD = 5V, IDS = 250A ID = 40A, VGS = 10V
TJ = 150C
30 1 -
1.3 1.96
1 100 3 1.6 -
V A nA V m
Dynamic Charateristics
CISS COSS CRSS Qg(TOT) Qg(5) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "MIller" Charge VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDD = 15V ID = 40A Ig = 1.0mA VDS = 15V, VGS = 0V, f = 1MHz 11535 2195 1580 227 121 9.3 29 20 46 295 158 13 pF pF pF nC nC nC nC nC nC
Switching Charateristics (VGS = 5V)
tON td(on) tr td(off) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time ID = 40A VGS = 5V, VDD = 15V, RG = 2.5 26 65 90 60 165 255 ns ns ns ns ns ns
Drain-Source Diode Charateristics
VSD trr Qrr Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge ISD = 80A, VGS = 0V ISD = 40A, VGS = 0V ISD = 40A, dISD/dt = 100A/s ISD = 40A, dISD/dt = 100A/s 38 32 1.25 1.0 V ns nC
FD6M016N03 Rev. A
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FD6M016N03 30V/80A Synchronous Rectifier Module
Typical Performance Characteristics 1. Each Switch,
Unless Otherwise Specified
Figure 3. On-Region Characteristics
120
VGS 10.0 V 5.0 V 3.5 V Bottom : 3.0 V Top :
ID
VDS
ID, Drain Current[A]
80
VGS
D
G
40
*Notes : 1. 250s Pulse Test o 2. TC = 25 C
VDS
VGS,STEP
FD6M016N03 S
1.5
0 0.0
0.5
1.0
VDS, Drain-Source Voltage[V]
Figure 4. Transfer Characteristics
200
ID VDS
160
D
VGS
ID, Drain Current[A]
150 C 25 C
o
o
120 80 40 0 1.0
-40 C
o
G
VGS
VDS
FD6M016N03
S
1.5 2.0 2.5
*Notes: 1. VDS = 15V 2. 250s Pulse Test
3.0
3.5
4.0
VGS, Input Voltage[V]
Figure 5. Body Diode Forward Voltage Variation vs. Source Current and Temperature
100
Figure 6. Output Capacitance Characteristic
20
IS, Reverse Drain Current [A]
125 C
o
25 C
o
Capacitance [nF]
15
Ciss iss
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
10
* Notes : 1. VGS = 0V 2. 250s Pulse Test
10
Coss
5
Crss
* Note: 1. VGS = 0 V 2. f = 1 MHz
1
0.4 0.6 0.8 1.0 VSD, Body Diode Forward Voltage [V]
1.2
0 0.1
1
10
30
VDS, Drain-Source Voltage [V]
FD6M016N03 Rev. A
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FD6M016N03 30V/80A Synchronous Rectifier Module
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.15 1.10
RDS(ON), (Normalized) Drain-Source On-Resistance
* Notes: 1. VGS = 0V 2. ID = 250A
Figure 8. On-Resistance Variation vs. Temperature
2.0
1.5
1.00
1.0
0.5
0.90 0.85 -50 0 50 100 150 200
* Notes : 1. VGS = 10 V 2. ID = 40 A
0.0
-50
TJ, Junction Temperature [C]
0 50 100 150 TJ, Junction Temperature [C]
200
Figure 9. Transient Thermal Response Curve
10 Thermal Response [ZJC]
0.5
1
0.2 0.1 0.05
0.1
PDM t1 t2
o
0.02 0.01
*Notes:
0.01
Single pulse
1. ZJC(t) = 3.9 C/W Typ. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
-4
0.001 -5 10
10
10
-3
10
-2
10
-1
10
0
10
1
10
2
Rectangular Pulse Duration [sec]
Figure 10. Maximum Safe Operating Area
500 100
1ms 10ms 10s
Figure 11. Unclamped Inductive Switching Capability
500 IAS, Avalanche Current [A]
If R = 0 tAV = (L)(IAS)/(1.3*Rated BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*Rated BVDSS - VDD) + 1]
ID, Drain Current [A]
100
10
DC Operation in This Area is Limited by R DS(on) * Notes : 1. TC = 25 C 2. TJ = 125 C 3. Single Pulse
o o
Starting TJ = 25 C
o
10
1
Starting TJ = 100 C
o
0.1 0.1
1 10 VDS, Drain-Source Voltage [V]
50
1 0.01
0.1
1
10
100
1000
tAV, Time In Avalanche [ms]
FD6M016N03 Rev. A
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FD6M016N03 30V/80A Synchronous Rectifier Module
AC Test Circuits and Waveforms
IAS
VDS L
tp IAS
VDS
VGS
D
VDD
VGS
G FD6M016N03
VDD
tp S
0 tAV
Figure 12. Unclamped Inductive Switching Test Circuit and Waveforms
VDS
VGS
D
RL
R Figure 13. G Switching Test Waveforms DD V
G
PULSE
FD6M016N03 S
Figure 13. Switching Test Circuit
tON td(ON) tr
90%
tOFF td(OFF) tf
90%
VDS
10% 10%
90%
VIN
10%
50%
50%
PULSE WIDTH
Figure 14. Switching Test Waveforms
FD6M016N03 Rev. A
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FD6M016N03 30V/80A Synchronous Rectifier Module
Application circuits
VIN
10 9 15
D2
VOUT
G2
8 6 7
G1 S2
14 13 12 11
D1 S1
PWM Controller
1 2 3 4 5
OPTO Feedback
Figure 15. Application Circuit of Forward Converter with FD6M016N03
LF
VOUT
VIN
G2
10
9
15
D2 CF
Q1
8
CR
6 7
G1 S2
14 13 12
VOUT_FB
FOD817
KA431
Q2
1
11
D1 S1
2
3
4
5
LF
Figure 16. Application Circuit of Asymmetrical HB Converter with FD6M016N03
VIN
Q1 Q3
G2 LF
VOUT
10
9
15
D2 CF
8 6 7
G1 S2
14 13 12
VOUT_FB
FOD817
KA431
Q2
Q4
1
11
D1 S1
2
3
4
5
LF
Figure 17. Application Circuit of Full Bridge Converter with FD6M016N03
FD6M016N03 Rev. A
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FD6M016N03 30V/80A Synchronous Rectifier Module
Detailed Package Outline Drawings
26.20 25.80 23.10 22.90 (R0.50) 5.35 5.15 10.70 10.30 14.50 13.50
2.70 2.30 (0.50)
(12.00) (1.50) 18.50 17.50
(0.77)
(R0.55) (R0.55) 0.70 0.30 (6.00)
MAX 3.07 2.97 2.77 1.27
MAX 0.80 0.70 0.50
0.60 0.40 3.48 2.88
22.86
(R0.50)
2.70 2.30
Figure 18. EPM15 Package
Dimensions in Millimeters
FD6M016N03 Rev. A
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FD6M016N03 30V/80A Synchronous Rectifier Module
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM *
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tm
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PDP-SPMTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world 1mW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SuperMOSTM (R)
The Power Franchise(R)
tm
TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM
* EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification
Advance Information
Product Status
Formative or In Design
Definition
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
Preliminary
First Production
No Identification Needed Obsolete
FD6M016N03 Rev. A
Full Production Not In Production
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