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CT60AM-18F
Insulated Gate Bipolar Transistor
REJ03G1374-0200 (Previous: MEJ02G0023-0101) Rev.2.00 Jul 07, 2006
Features
* VCES : 900 V * IC : 60 A * Integrated fast-recovery diode
Appearance Figure
RENESAS Package code: PRSS0004ZC-A (Package name: TO-3PL)
2, 4 4
1 1 2 3 3
1 : Gate 2 : Collector 3 : Emitter 4 : Collector
Applications
Microwave oven, Electromagnetic cooking devices, Rice-cookers
Maximum Ratings
(Tc = 25C)
Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current Collector current (Pulse) Emitter current Maximum power dissipation Junction temperature Storage temperature Symbol VCES VGES VGEM IC ICM IE PC Tj Tstg Ratings 900 25 30 60 120 40 180 - 40 to +150 - 40 to +150 Unit V V V A A A W C C Conditions VGE = 0 V
Rev.2.00 Jul 07, 2006 page 1 of 5
CT60AM-18F
Electrical Characteristics
(Tch = 25C)
Parameter Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Turn-on Rise time Turn-off delay time Turn-off Fall time Tail loss Tail current Emitter-collector voltage Diode reverse recovery time Thermal resistance (IGBT) Thermal resistance (Diode) Symbol ICES IGES VGE (th) VCE (sat) Cies Coes Cres td (on) tr td (off) tf Etail Itail VEC trr Rth (j-c) Rth (j-c) Min. -- -- 2.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- 4.0 2.1 4400 115 75 0.05 0.1 0.2 0.3 0.6 6.0 2.2 0.5 -- -- Max. 1 0.5 6.0 2.7 -- -- -- -- -- -- -- 1.0 12 3.0 2.0 0.69 4.0 Unit mA A V V pF pF pF s s s s mJ/pls A V s C/W C/W IE = 60 A, VGE = 0 V IE = 60 A, diS/dt = -20 A/s Junction to case Junction to case Test conditions VCE = 900 V, VGE = 0 V VGE = 20 V, VCE = 0 V VCE = 10 V, IC = 6 mA IC = 60 A, VCE = 15 V VCE = 25 V, VGE = 0 V, f = 1 MHz VCC = 300 V, IC = 60 A, VGE = 15 V, RG = 10
ICP = 60 A, Tj = 125C, dv/dt = 200 V/s
Rev.2.00 Jul 07, 2006 page 2 of 5
CT60AM-18F
Performance Curves
Collector-Emitter Saturation Voltage VCE(sat) (V)
Collector Current vs. Collector-Emitter Voltage (Typical)
160
Tc = 25C Pulse Test
VGE = 20V 15V 10V 9V
Collector-Emitter Saturation Voltage vs. Gate-Emitter Voltage (Typical)
5
Tc = 25C Pulse Test
Collector Current IC (A)
PD = 180W
120
4
IC = 120A 60A
8V
3
80
7V
2
30A 15A
40
1
0
0
1
2
3
4
5
0
0
4
8
12
16
20
Collector-Emitter Voltage VCE (V) Collector Current vs. Gate-Emitter Voltage (Typical)
160
Tc = 25C VCE = 5V Pulse Test
Gate-Emitter Voltage VGE (V)
Capacitance vs. Collector-Emitter Voltage (Typical)
104
7 5 3 2 Cies
Collector Current IC (A)
120
Capacitance C (pF)
103
7 5 3 2
80
102
7 5 Coes Tj = 25C 3 VGE = 0V 2 f = 1MHz
40
Cres
0
0
4
8
12
16
101 10-1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103
Gate-Emitter Voltage VGE (V)
Collector-Emitter Voltage VCE (V)
Switching Characteristics (Typical)
103
7 5 Tj = 25C VCC = 300V VGE = 15V RG = 10
Switching Time vs. Gate Resistance (Typical)
104
7 5 3 2 Tj = 25C VCC = 300V VGE = 15V IC = 60A
Switching Time (ns)
3 2
td(off) tf
Switching Time (ns)
103
7 5 3 2
td(off)
102
7 5 3 2
tr
tf
102
7 5 3 2
td(on)
tr td(on)
101 0 10
2
3
5 7 101
2
3
5 7 102
101 0 10
2
3
5 7 101
2
3
5 7 102
Collector Current IC (A)
Gate Resistance RG ()
Rev.2.00 Jul 07, 2006 page 3 of 5
CT60AM-18F
Gate-Emitter Voltage vs. Gate Charge Characteristic (Typical)
20
100
IC = 60A Tj = 25C VCE = 250V
Emitter Current vs. Emitter-Collector Voltage (Typical)
TC = 25C VGE = 0V Pulse Test
Gate-Emitter Voltage VGE (V)
16
Emitter Current IE (A)
600V
80
12
400V
60
8
40
4 0
20
0
50
100 150 200 250 300 350
0
0
0.8
1.6
2.4
3.2
Gate Charge Qg (nC)
Emitter-Collector Voltage VEC (V) IGBT Transient Thermal Impedance Characteristics
10-4 2 3 5 710-3 2 3 5 710-3 2 3 5 710-1 2 3 5 7100 100
7 5 3 2 2
Gate-Emitter Threshold Voltage VGE(th) (V)
8 7 6 5 4 3 2 1 0
VGE = 0V IC = 6mA
Transient Thermal Impedance Zth( j - c ) (C/W)
Gate-Emitter Threshold Voltage vs. Junction Temperature (Typical)
10-1
7 5 3 2
10-1
7 5 3 2
10-2
10-2
5 710-52 3 5 7 10-4
-40
0
40
80
120
150
Junction Temperature Tj (C)
Pulse Width tw (S)
Transient Thermal Impedance Zth( j - c ) (C/W)
Diode Transient Thermal Impedance Characteristics
10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7100 2 3 5 7101 101
7 5 3 2 7 5 3 2
100
7 5 3 2
10-1
7 5 3 2
10 -1
7 5 3 2
10-2
10 -2
5 7 10-5 2 3 5 7 10-4 2 3 5 7 10-3
Pulse Width tw (S)
Rev.2.00 Jul 07, 2006 page 4 of 5
CT60AM-18F
Package Dimensions
Package Name TO-3PL* JEITA Package Code RENESAS Code PRSS0004ZC-A Previous Code MASS[Typ.] 9.8g
Unit: mm
20Max
5 2
3.2
6 1
2 1
20.6Min
0.5 5.45 5.45 3 4.0
Ordering Information
Lead form Standard packing Quantity Standard order code Standard order code example CT60AM-18F CT60AM-18F-AD
Straight type Plastic Magazine (Tube) 25 Type name Lead form Plastic Magazine (Tube) 25 Type name - Lead forming code Note: Please confirm the specification about the shipping in detail.
Rev.2.00 Jul 07, 2006 page 5 of 5
2.5
26
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