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| AP2625GY RoHS-compliant Product Advanced Power Electronics Corp. Low Gate Charge Low Gate Drive Surface Mount Package G1 S1 G2 D1 P-CHANNEL ENHANCEMENT MODE POWER MOSFET D2 BVDSS RDS(ON) ID -30V 185m - 2A S2 Description D2 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is widely used for commercial-industrial applications. S1 D1 G2 S2 G1 SOT-26 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -30 12 -2.0 -1.6 -20 1.2 0.01 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 110 Unit /W Data and specifications subject to change without notice 201023073-1/4 AP2625GY Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-4.5V, ID=-1.6A VGS=-2.5V, ID=-1A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o Min. -30 -0.3 - Typ. 3.3 4 0.5 2 5 6 20 3 265 42 32 Max. 185 265 -1.2 -1 -25 100 6 425 - Units V m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF VDS=VGS, ID=-250uA VDS=-5V, ID=-2A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS=12V ID=-2A VDS=-24V VGS=-4.5V VDS=-15V ID=-1A RG=3.3,VGS=-10V RD=15 VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-1A, VGS=0V IS=-2A, VGS=0V, dI/dt=100A/s Min. - Typ. 21 16 Max. -1.2 - Units V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 180/W when mounted on min. copper pad. THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2/4 AP2625GY 20 15 T A = 25 o C -ID , Drain Current (A) 15 -ID , Drain Current (A) - 10 V -7.0V -5.0V -4.5V T A = 150 o C 12 - 10 V -7.0V -5.0V -4.5V 9 10 V G =- 2.5 V 5 6 V G =- 2.5 V 3 0 0 1 2 3 4 5 6 7 0 0 1 2 3 4 5 6 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 220 1.6 ID=-1A 200 T A =25 o C I D =- 1.6 A V G = -4.5 V 1.4 RDS(ON) (m ) 180 Normalized RDS(ON) 1.2 160 1.0 140 0.8 120 0.6 0 2 4 6 8 10 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.8 2.4 2.0 1.4 1.6 Normalized -VGS(th) (V) -IS(A) 1.2 T j =150 o C 1.0 T j =25 o C 0.8 0.6 0.4 0.0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.2 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP2625GY f=1.0MHz 12 1000 -VGS , Gate to Source Voltage (V) 10 V DS =-24V I D =-2A 8 C iss C (pF) 6 100 4 C oss C rss 2 0 0 2 4 6 8 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 0.2 10 0.1 0.1 0.05 -ID (A) 1 100us 1ms 10ms 0.02 0.01 Single Pulse PDM t T Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 180/W 0.01 0.1 T A =25 C Single Pulse 0.01 0.1 1 10 o 100ms 1s DC 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 ADVANCED POWER ELECTRONICS CORP. Package Outline : SOT-26 G L L SYMBOLS Millimeters MIN NOM MAX A B C C B D E H G I J A D L 2.70 2.60 1.40 0.30 0.00 2.90 2.80 1.60 0.43 0.05 1.20REF 1.90REF 0.12REF 0.37REF 0.95REF 3.10 3.00 1.80 0.55 0.10 H E I 1.All Dimension Are In Millimeters. J 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : SOT-26 Part Number Y9XX Date Code |
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