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| New Product SI7469DP Vishay Siliconix P-Channel 80-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 80 rDS(on) () 0.025 at VGS = - 10 V 0.029 at VGS = - 4.5 V ID (A)a - 28 - 28 Qg (Typ) 55 nC FEATURES * TrenchFET(R) Power MOSFET RoHS COMPLIANT PowerPAK SO-8 6.15 mm S 1 2 3 S S 5.15 mm S G 4 G D 8 7 6 5 D D D Bottom View Ordering Information: SI7469DP-T1-E3 (Lead (Pb)-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C TC = 70 C TA = 25 C TA = 70 C TC = 25 C TA = 25 C L = 0.1 mH TC = 25 C TC = 70 C TA = 25 C TA = 70 C d, e Symbol VDS VGS ID Limit - 80 20 - 28a - 28a - 10.2b, c - 8.1b, c - 40 - 28a - 4.3b, c - 45 100 83 53 5.2b, c 3.3b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 C) Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy IDM IS IAS EAS PD A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) TJ, Tstg C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t 10 sec Steady State Symbol RthJA RthJC Typical 19 1.2 Maximum 24 1.5 Unit C/W Notes: a. Package Limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 sec. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 65 C/W. Document Number: 73438 S-71596-Rev. B, 30-Jul-07 www.vishay.com 1 New Product SI7469DP Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic b Symbol VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb Test Conditions VGS = 0 V, ID = - 250 A ID = - 250 A VDS = VGS, ID = - 250 A VDS = 0 V, VGS = 20 V VDS = - 80 V, VGS = 0 V VDS = - 80 V, VGS = 0 V, TJ = 55 C VDS 5 V, VGS = - 10 V VGS = - 10 V, ID = - 10.2 A VGS = - 4.5 V, ID = - 8.1 A VDS = - 15 V, ID = - 10.2 A Min - 80 Typ Max Unit V - 79.6 5.3 -1 -3 100 -1 - 10 - 40 0.021 0.024 52 0.025 0.029 mV/C V nA A A S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Currenta 4700 VDS = - 40 V, VGS = 0 V, f = 1 MHz VDS = - 40 V, VGS = - 10 V, ID = - 10.2 A VDS = - 40 V, VGS = - 4.5 V, ID = - 10.2 A f = 1 MHz VDD = - 40 V, RL = 4.9 ID - 8.1 A, VGEN = - 10 V, Rg = 1 320 235 105 55 16 26 4 45 220 95 110 15 VDD = - 40 V, RL = 4.9 ID - 8.1 A, VGEN = - 4.5 V, Rg = 1 25 105 100 TC = 25 C IS = - 8.1 A - 0.8 55 IF = - 8.1 A, di/dt = 100 A/s, TJ = 25 C 110 37 18 70 330 145 165 25 40 160 150 - 28 - 40 - 1.2 85 165 ns ns 160 85 nC pF A V ns nC ns Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73438 S-71596-Rev. B, 30-Jul-07 New Product SI7469DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 40 35 I D - Drain Current (A) 20 VGS = 10 thru 4 V 16 30 25 20 15 10 3V 5 I D - Drain Current (A) 12 8 TA = 125 C 4 25 C - 55 C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.026 8000 7000 VGS = 4.5 V 6000 0.024 C - Capacitance (pF) 5000 4000 3000 2000 0.021 1000 0 0 5 10 15 20 25 30 35 40 0 10 Coss Transfer Characteristics 0.025 rDS(on) - On-Resistance () Ciss 0.023 0.022 VGS = 10 V Crss 0.020 20 30 40 50 60 70 80 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 10 ID = 10.2 A 8 rDS(on) - On-Resistance (Normalized) 1.7 VDS = 64 V VDS = 40 V 4 2.1 1.9 ID = 10.2 A Capacitance V GS - Gate-to-Source Voltage (V) VGS = 10 V 1.5 1.3 1.1 0.9 0.7 VGS = 4.5 V 6 2 0 0 20 40 60 80 100 120 0.5 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge Document Number: 73438 S-71596-Rev. B, 30-Jul-07 On-Resistance vs. Junction Temperature www.vishay.com 3 New Product SI7469DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 40 rDS(on) - Drain-to-Source On-Resistance () 0.05 I S - Source Current (A) TJ = 150 C 10 0.04 TA = 125 C 0.03 TA = 25 C 0.02 TJ = 25 C 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0.01 2 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 2.4 35 30 ID = 250 A 2.0 Power (W) VGS(th) (V) 25 20 15 10 1.4 5 On-Resistance vs. Gate-to-Source Voltage 2.2 1.8 1.6 1.2 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 1000 TJ - Temperature (C) Threshold Voltage 100 *Limited by rDS(on) Single Pulse Power, Junction-to-Ambient 10 I D - Drain Current (A) 100 s 1 ms 1 10 ms 100 ms 0.1 1s 10 s dc 0.01 TA = 25 C Single Pulse 0.001 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) *VGS > minimum V GS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73438 S-71596-Rev. B, 30-Jul-07 New Product SI7469DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 50 100 40 ID - Drain Current (A) 80 30 Package Limited Power 60 20 40 10 20 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (C) TC - Case Temperature (C) Current Derating* 100 Power Derating IC - Peak Avalanche Current (A) 10 TA = 1 0.000001 L . ID BV - V DD 0.00001 0.0001 0.001 0.01 TA - Time In Avalanche (sec) Single Pulse Avalanche Capability *The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73438 S-71596-Rev. B, 30-Jul-07 www.vishay.com 5 New Product SI7469DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 65 C/W Single Pulse 0.01 10-2 10-1 1 10 Square Wave Pulse Duration (sec) 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73438. www.vishay.com 6 Document Number: 73438 S-71596-Rev. B, 30-Jul-07 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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