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| a FEATURES Single-Supply Operation: 2.7 V to 6 V High Output Current: 250 mA Low Supply Current: 600 A/Amp Wide Bandwidth: 4 MHz Slew Rate: 6.5 V/ s No Phase Reversal Low Input Currents Unity Gain Stable CMOS Single-Supply Rail-to-Rail Input/Output Operational Amplifier OP150/OP250/OP450 PIN CONFIGURATIONS 8-Lead Narrow-Body SO (S Suffix) NC -IN +IN V- NC V+ 5-Lead SOT23-5 (RT Suffix) OUT V- +IN V+ -IN OBS APPLICATIONS Battery Powered Instrumentation Multi Media Audio Medical Remote Sensors ASIC Input or Output Amplifier Automotive Headphone Driver GENERAL DESCRIPTION OP150 OUT NC OP150 The OP150, OP250 and OP450 are single, dual and quad CMOS single-supply, 4 MHz bandwidth amplifiers featuring rail-to-rail inputs and outputs. All are guaranteed to operate from a 3 volt single supply as well as a +5 volt supply. OLE OUT A V+ -IN A OUT B -IN B +IN A V- 8-Lead Narrow-Body SO (S Suffix) 8 Lead Epoxy DIP (P Suffix) OUT A -IN A 1 2 3 4 OP250 8 7 6 5 V+ OUT B -IN B +IN B OP250 +IN B 14-Lead Epoxy DIP (P Suffix) The OP150 family of amplifiers have very low input bias currents. The outputs are capable of driving 250 mA loads and are stable with capacitive loads as high as 500 pF. Applications for these amplifiers include portable medical equipment, safety and security, and interface for transducers with high output impedances. Supply current is only 600 A per amplifier. The ability to swing rail-to-rail at both the input and output enables designers to build multistage filters in single-supply systems and maintain high signal-to-noise ratios. The OP150/OP250/OP450 are specified over the extended industrial (-40C to +125C) temperature range. The OP150 single amplifiers are available in 8-pin SO surface mount and the 5-pin SOT23-5 packages. The OP250 dual is available in 8pin plastic DIPs and SO surface mount packages. The OP450 quad is available in 14-pin DIPs, TSSOP and narrow 14-pin SO packages. Consult factory for TSSOP availability. OUT A -IN A +IN A V+ +IN B -IN B OUT B 1 2 3 4 5 6 7 14 OUT D 13 -IN D 12 +IN D TE +IN A V- 14-Lead SO (S Suffix) OUT A OUT D -IN D -IN A +IN A V+ +IN B -IN B OUT B OP450 +IN D V- +IN C -IN C OUT C OP450 11 V- 10 +IN C 9 8 -IN C OUT C 14-Lead TSSOP (RU Suffix) OP450 This information applies to a product under development. Its characteristics and specifications are subject to change without notice. Analog Devices assumes no obligation regarding future manufacture unless otherwise agreed to in writing. Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 617/329-4700 Fax: 617/326-8703 REV. 0 PRELIMINARY TECHNICAL DATA OP150/OP250/OP450-SPECIFICATIONS ELECTRICAL CHARACTERISTICS Parameter Symbol (@ VS = +3.0 V, VCM = 0.05 V, VO = 1.4 V, TA = +25 C, unless otherwise noted) Conditions Min Typ Max Units INPUT CHARACTERISTICS Offset Voltage OP150 Offset Voltage OP250/OP450 Input Bias Current Input Offset Current Input Voltage Range Common-Mode Rejection Ratio Large Signal Voltage Gain VOS VOS IB IOS CMRR AVO -40C TA +125C -40C TA +125C -40C TA +125C -40C TA +125C VCM = 0 V to 3 V -40C TA +125C RL = 10 k, VO = 0.3 V to 2.7 V -40C TA +125C RL = 2 k, VO = 0.3 V to 2.7 V RL = 1 k, VO = 0.3 V to 2.7 V 0 60 40 16 10 10 25 5 5 60 3 OBS Large Signal Voltage Gain Large Signal Voltage Gain Offset Voltage Drift Bias Current Drift Offset Current Drift AVO AVO VOS/T IB/T IOS/T VOH OUTPUT CHARACTERISTICS Output Voltage High Output Voltage Low VOL Output Current Open Loop Impedance POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier DYNAMIC PERFORMANCE Slew Rate Settling Time Gain Bandwidth Product Phase Margin Channel Separation NOISE PERFORMANCE Voltage Noise Voltage Noise Density Current Noise Density Specifications subject to change without notice. OLE IL = 100 A -40C to +125C IL = 10 mA -40C to +125C IL = 100 A -40C to +125C IL = 10 mA -40C to +125C 2.95 -40C to +125C f = 1 MHz, AV = 1 VS = 2.7 V to 6 V -40C TA +125C VO = 0 V -40C TA +125C RL =10 k To 0.01% 70 68 f = 1 kHz, RL =10 k 0.1 Hz to 10 Hz f = 1 kHz mV mV mV mV pA pA pA pA V dB dB V/mV V/mV V/mV V/mV V/C pA/C pA/C V V V V mV mV mV mV mA mA dB dB A A V/s s MHz Degrees dB V p-p nV/Hz pA/Hz IOUT ZOUT PSRR ISY TE 2.99 2.95 2 10 30 55 250 500 650 2.7 2 75 600 55 SR tS GBP Oo CS en p-p en in This information applies to a product under development. Its characteristics and specifications are subject to change without notice. Analog Devices assumes no obligation regarding future manufacture unless otherwise agreed to in writing. PRELIMINARY TECHNICAL DATA -2- REV. 0 OP150/OP250/OP450 ELECTRICAL CHARACTERISTICS (@ V = +5.0 V, V S CM = 0.05 V, VO = 1.4 V, TA = +25 C, unless otherwise noted) Min Typ Max Units Parameter Symbol Conditions INPUT CHARACTERISTICS Offset Voltage OP150 Offset Voltage OP250/OP450 Input Bias Current Input Offset Current Input Voltage Range Common-Mode Rejection Ratio Large Signal Voltage Gain VOS VOS IB IOS CMRR AVO -40C TA +125C -40C TA +125C -40C TA +125C -40C TA +125C VCM = 0 V to 5 V -40C TA +125C RL = 10 k, VO = 0.3 V to 4.7 V -40C TA +125C RL = 2 k, VO = 0.3 V to 2.7 V RL = 1 k, VO = 0.3 V to 2.7 V -40C TA +125C 0 60 40 16 10 1.5 100 20 30 0.1 5 5 50 60 8 16 5 OBS Large Signal Voltage Gain Large Signal Voltage Gain Offset Voltage Drift Bias Current Drift Offset Current Drift OUTPUT CHARACTERISTICS Output Voltage High VOH Output Voltage Low VOL Output Current Open Loop Impedance POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier DYNAMIC PERFORMANCE Slew Rate Full Power Bandwidth Settling Time Gain Bandwidth Product Phase Margin Channel Separation NOISE PERFORMANCE Voltage Noise Voltage Noise Density Voltage Noise Density Current Noise Density Specifications subject to change without notice. AVO AVO VOS/T IB/T IOS/T OLE IL = 100 A -40C to +125C IL = 10 mA -40C to +125C IL = 100 A -40C to +125C IL = 10 mA -40C to +125C -40C to +125C f = 1 MHz, AV = 1 VS = 2.7 V to 6 V -40C TA +125C VO = 0 V -40C TA +125C RL =10 k 1% Distortion To 0.01% 75 70 f = 1 kHz, RL =10 k 0.1 Hz to 10 Hz f = 1 kHz f = 10 kHz TE 4.99 4.95 2 30 250 V V V V mV mV mV mV mA mA dB dB A A 550 6.5 650 4 75 55 35 mV mV mV mV pA pA pA pA V dB dB V/mV V/mV V/mV V/mV V/C pA/C pA/C IOUT ZOUT PSRR ISY SR BWp tS GBP Oo CS en p-p en en in V/s kHz s MHz Degrees dB V p-p nV/Hz nV/Hz pA/Hz This information applies to a product under development. Its characteristics and specifications are subject to change without notice. Analog Devices assumes no obligation regarding future manufacture unless otherwise agreed to in writing. REV. 0 -3- PRELIMINARY TECHNICAL DATA OP150/OP250/OP450 WAFER TEST LIMITS Parameter (@ VS = +5.0 V, VCM = 0 V, TA = +25 C unless otherwise noted.) Symbol Conditions Limit Units OBS ABSOLUTE MAXIMUM RATINGS 1 Package Type JA3 JC Offset Voltage Input Bias Current Input Offset Current Input Voltage Range Common-Mode Rejection Ratio Power Supply Rejection Ratio Large Signal Voltage Gain Output Voltage High Output Voltage Low Supply Current/Amplifier VOS IB IOS VCM CMRR PSRR AVO VOH VOL ISY VCM = 0 V to 10 V V = +2.7 V to +7 V RL = 10 k RL = 2 k to GND RL = 2 k to V+ VO = 0 V, RL = 10 50 10 V- to V+ 60 70 2.9 55 650 mV max pA max pA max V min dB min dB min V/mV min V min mV max A max NOTE Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing. Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7 V Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND to VS Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V Output Short-Circuit Duration to GND2 . . . . . . . . . Indefinite Storage Temperature Range P, S, RT, RU Package . . . . . . . . . . . . . . . . -65C to +150C Operating Temperature Range OP150/OP250/OP450G . . . . . . . . . . . . . . . -40C to +125C Junction Temperature Range P, S, RT, RU Package . . . . . . . . . . . . . . . . -65C to +150C Lead Temperature Range (Soldering, 60 sec) . . . . . . . +300C Units OLE Model Temperature Range ORDERING GUIDE Package Option 5-Pin SOT (RT) 8-Pin Plastic DIP (P) 8-Pin SOIC (S) 8-Pin TSSOP (RU) 14-Pin Plastic DIP (P) 14-Pin SOIC (S) 14-Pin TSSOP( RU) 325 103 158 240 76 120 180 43 43 43 33 36 35 C/W C/W C/W C/W C/W C/W C/W OP150GS OP150GRT OP150GBC OP250GP OP250GS OP250GRU OP250GBC OP450GP OP450GS OP450GRU OP450GBC -40C to +125C -40C to +125C +25C -40C to +125C -40C to +125C -40C to +125C +25C -40C to +125C -40C to +125C -40C to +125C +25C TE 8-Pin SOIC 5-Pin SOT DICE 8-Pin Plastic DIP 8-Pin SOIC 8-Pin TSSOP DICE 14-Pin Plastic DIP 14-Pin SOIC 14-Pin TSSOP DICE NOTES 1 Absolute maximum ratings apply to both DICE and packaged parts, unless otherwise noted. 2 JA is specified for the worst case conditions, i.e., JA is specified for device in socket for P-DIP packages; JA is specified for device soldered in circuit board for SOIC package. CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP150/OP250/OP450 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, p roper ESD precautions are recommended to avoid performance degradation or loss of functionality. WARNING! ESD SENSITIVE DEVICE This information applies to a product under development. Its characteristics and specifications are subject to change without notice. Analog Devices assumes no obligation regarding future manufacture unless otherwise agreed to in writing. PRELIMINARY TECHNICAL DATA -4- REV. 0 OP150/OP250/OP450 DICE CHARACTERISTICS OP150 Die Size 0.00 x 0.00 Inch, 00 Sq. Mils Substrate (Die Backside) Is Connected to V- Transistor Count, 00. OP250 Die Size 0.044 x 0.045 Inch, 1,980 Sq. Mils Substrate (Die Backside) Is Connected to V- Transistor Count, 0. OP450 Die Size 0.052 x 0.058 Inch, 3,016 Sq. Mils Substrate (Die Backside) Is Connected to V- Transistor Count, 127. 2.5 VOL VOH OBS 2.0 VOUT - V 1.5 1.0 0.5 0 0 20 40 60 80 100 120 R LOAD - 140 Figure 1. VOUT vs. RLOAD OLE 160 180 200 TE This information applies to a product under development. Its characteristics and specifications are subject to change without notice. Analog Devices assumes no obligation regarding future manufacture unless otherwise agreed to in writing. REV. 0 -5- PRELIMINARY TECHNICAL DATA |
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