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AEGIS
SEMICONDUTORES LTDA.
A1A:140.XX
VOLTAGE RATINGS
Part Number A1A:140.02 A1A:140.04 A1A:140.06 A1A:140.08 A1A:140.10 A1A:140.12 A1A:140.14 A1A:140.16 VRRM , VR (V) Max. rep. peak reverse voltage TJ = 0 to 180 C 200 400 600 800 1000 1200 1400 1600
O
VRSM , VR (V) Max. nonrep. peak reverse voltage
O
This datasheet applies to: Metric thread: A1A:140.XX, A1B:140.XX Inch thread: A2A:140.XX, A2B:140.XX
TJ = -40 to 0 C 200 400 600 800 1000 1200 1400 1600
TJ = 25 to 180 C 300 500 700 900 1100 1300 1500 1700
O
MAXIMUM ALLOWABLE RATINGS
PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 180 -40 to 180 140 125 280 2300 IFSM Max. Peak non-rep. surge current 2400 A 2700 2850 26 I2t Max. I2t capability 24 37 34 I2t1/2 Max. I2t1/2 capability F Mounting Force 220 10(~89) kA2s1/2 N.m(Lbf.in) kA2s 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms t = 8.3 ms t = 10ms Initial T J = 180 C, no voltage applied after surge.
O O Initial T J = 180 C, no voltage applied after surge.
UNITS
O O
NOTES 180O half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave
O Initial T J = 180 C, rated VRRM applied after surge.
C C C
A
O
IF(RMS) Nom. RMS current
A
Initial T J = 180 C, rated VRRM applied after surge.
O
t = 8.3 ms Initial T J = 180OC, no voltage applied after surge. I2t for time t x = I2t1/2 * tx1/2. (0.1 < tx < 10ms). -
AEGIS
SEMICONDUTORES LTDA.
A1A:140.XX
CHARACTERISTICS
PARAMETER VFM Peak forward voltage VF(TO) Threshold voltage rF1 Forward slope resistance IRM Peak reverse current RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ----------------TYP. 1.15 ----10 --------MAX. UNITS 1.43 0.90 0.65 20.00 0.35 0.40 0.43 0.08 V V mW mA
O O O
TEST CONDITIONS Initial T J = 25 O sinusoidal wave, Ipeak = 440A. C, TJ = 180 O Av. Power = V F(TO)*IF(AV) +rF*[IF(RMS)]2, sine. C, Use low values for IFM < pIF(AV) TJ = 180 C. Max. Rated VRRM
O
C/W DC operation C/W 180O sine wave C/W 120O rectangular wave C/W Mtg. Surface smooth, flat and greased. Single side. -----
O
----100(3.5) DO-205AA (DO-8)
g(oz.) JEDEC
Maximum Allowable Case Temperature
190
Maximum Allowable Case Temperature
Maximum Allowable Case Temperature (C)
Maximum Allowable Case Temperature (C)
180 170 160 150 140 130 120 110 100 90 80 0 20 40 60 80 100 120 140 160
*Sinusoidal Waveform
180
160
140
30 60
30 60 90 120 180
120
90 120
DC
180
100
80 0 20 40 60 80 100 120 140 160 180
*Rectangular Waveform
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
AEGIS
SEMICONDUTORES LTDA.
A1A:140.XX
Maximum Average Forward Power Loss
1400
Maximum Average Forward Power Loss
Maximum Average Forward Power Loss (W)
1000
30
Maximum Average Forward Power Loss (W)
1200
30
1000 800
60
800
600
60 90
600
90
400
120 180 DC
400 200 0 0
*Sinusoidal Waveform
120 180
200
0 0
*Rectangular Waveform
50
100
150
200
250
300
50
100
150
200
250
300
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Forward Voltage Drop
Transiente Thermal Impedance vs. Time
Transient Thermal Impedance (C / W)
0.5 ZthJH 0.4 ZthJC
Instantaneous Forward Current (A)
1000
0.3
100
TJ = 125C
0.2
TJ = 25C
0.1
10 0.5 1.0 1.5 2.0 2.5
0.0 10-3
10-2
10-1
100
101
102
Instantaneous Forward Voltage (V)
Time (s)
Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance Characteristics
AEGIS
SEMICONDUTORES LTDA.
A1A:140.XX
DO-205AA (DO-8)

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