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TLP176D
TOSHIBA Photocoupler GaAs IRED & Photo-MOSFET
TLP176D
Modem in PC Modem Fax Card Telecommunication
The TOSHIBA TLP176D consists of gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a SOP, which is suitable for surface mount assembly. The TLP176D is suitable for modem and PBX applications which require space savings. * * * * * * * SOP 4 pin (2.54SOP4): 1-form-A Peak off-state voltage: 200 V (min) Trigger LED current: 3 mA (max) On-state current: 200 mA (max) On-state resistance: 8 (max) Isolation voltage: 1500 Vrms (min) UL recognized: UL1577, file No. E67349 JEDEC JEITA
1-form A 1 4
Unit: mm
Pin Configuration (top view)

TOSHIBA
4 3
Weight: 0.1 g (typ.)
2 1: Anode 2: Cathode 3: Drain 4: Drain
3 1 2
Internal Circuit
1 4
2
3
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TLP176D
Absolute Maximum Ratings (Ta = 25C)
Characteristics Forward current Forward current derating (Ta 25C) LED Pulse forward current (100 s pulse, 100 pps) Reverse voltage Junction temperature Off-state output terminal voltage On-state current Detector On-state RMS current derating (Ta 25C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10 s) Isolation voltage (AC, 1 min., R.H. 60%) (Note) Symbol IF IF/C IFP VR Tj VOFF ION ION/C Tj Tstg Topr Tsol BVS Rating 50 -0.5 1 5 125 200 200 -2.0 125 -55 to 125 -40 to 85 260 1500 Unit mA mA/C A V C V mA mA/C C C C C Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: Device considered a two-terminal device: pins1 and 2 shorted together and pins 3 and 4 shorted together.
Recommended Operating Conditions
Characteristics Supply voltage Forward current On-state current Operating temperature Symbol VDD IF ION Topr Min 5 -20 Typ. 150 7.5 Max 200 25 130 65 Unit V mA mA C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document.
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TLP176D
Individual Electrical Characteristics (Ta = 25C)
Characteristics Forward voltage LED Reverse current Capacitance Detector Off-state current Capacitance Symbol VF IR CT IOFF COFF IF = 10 mA VR = 5 V V = 0, f = 1 MHz VOFF = 200 V V = 0, f = 1 MHz Test Condition Min 1.0 Typ. 1.15 30 100 Max 1.3 10 1 Unit V A pF A pF
Coupled Electrical Characteristics (Ta = 25C)
Characteristics Trigger LED current On-state resistance Symbol IFT RON Test Condition ION = 200 mA ION = 200 mA, IF = 5 mA Min Typ. 1 5 Max 3 8 Unit mA
Isolation Characteristics (Ta = 25C)
Characteristics Capacitance input to output Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1 MHz VS = 500 V, R.H. 60% AC, 1 minute Isolation voltage BVS AC, 1 second, in oil DC, 1 minute, in oil Min 5x 10 10 1500 Typ. 0.8 10
14
Max
Unit pF Vrms Vdc
3000 3000
Switching Characteristics (Ta = 25C)
Characteristics Turn-on time Turn-off time Symbol tON tOFF Test Condition RL = 200 VDD = 20 V, IF = 5 mA RL = 200 VDD = 20 V, IF = 5 mA (Note) (Note) Min Typ. 0.6 0.1 Max 1.5 1.0 Unit ms ms
Note: Switching time test circuit
IF
1
4
RL
VDD VOUT
IF
2
3 VOUT tON 10% tOFF
90%
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TLP176D
IF - Ta
100 350
ION - Ta
MOSFET ON-state current ION (mA)
300 250 200 150 100 50 0 -20
Allowable forward current IF (mA)
80
60
40
20
0 -20
0
20
40
60
80
100
0
20
40
60
80
100
Ambient temperature Ta (C)
Ambient temperature Ta (C)
IF - V F
100 300
ION - VON
Ta = 25C IF = 5 mA
MOSFET ON-state current ION (mA)
1.6 1.8
Ta = 25C 30
200
Allowable forward current IF (mA)
10
100
3
0
1
-100
0.3 0.1 0.6
-200
0.8
1.0
1.2
1.4
-300 -1
-0.5
0
0.5
1
Forward voltage VF (V)
MOSFET ON-state voltage
VON (V)
RON - Ta
10
IFT - Ta
5 ION = 200 mA t<1s
MOSFET ON-state resistance RON ()
ION = 200 mA 8 IF = 5 mA
6
Relative trigger LED current IFT/IFT (Ta = 25C)
t<1s
4
3
4
2
2
1
0 -20
0
20
40
60
80
100
0 -40
-20
0
20
40
60
80
100
Ambient temperature Ta (C)
Ambient temperature Ta (C)
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TLP176D
tON, tOFF - IF
3000 tON 1000 Ta = 25C VDD = 20 V RL = 200 3000 VDD = 20 V RL = 200 IF = 5 mA
tON, tOFF - Ta
(s)
(s) Switching time tON, tOFF
1000
Switching time tON, tOFF
300
300
100 tOFF 30
100
30
10 1
3
5
10
30
50
100
300 500
10 -40
-20
0
20
40
60
80
100
Forward current IE
(mA)
Ambient temperature Ta (C)
IOFF - Ta
100
MOSFET OFF-state current IOFF
(mA)
VOFF = 200 V
30
10
3
1 -20
0
20
40
60
80
100
120
Ambient temperature Ta (C)
5
2007-10-01
TLP176D
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Product names mentioned herein may be trademarks of their respective companies. * GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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