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| NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead (Pb) Free Product - RoHS Compliant BPY 62 Wesentliche Merkmale * Speziell geeignet fur Anwendungen im Bereich von 400 nm bis 1100 nm * Hohe Linearitat * Hermetisch dichte Metallbauform (TO-18) mit Basisanschluss, geeignet bis 125 C * Gruppiert lieferbar Anwendungen * Lichtschranken fur Gleich- und Wechsellichtbetrieb * Industrieelektronik * Messen/Steuern/Regeln" Typ Type BPY 62 BPY 62-3 BPY 62-3/4 BPY 62-4 Bestellnummer Ordering Code Q60215Y0062 Q60215Y1112 Q60215Y5198 Q60215Y1113 Features * Especially suitable for applications from 400 nm to 1100 nm * High linearity * Hermetically sealed metal package (TO-18) with base connection, suitable up to 125 C * Available in groups Applications * Photointerrupters * Industrial electronics * For control and drive circuits Fotostrom , Ee= 0.5 mW/cm2, = 950 nm, VCE = 5 V Photocurrent IPCE (mA) > 0.5 0.8...1.6 0.8...2.5 1.25...2.5 2007-04-03 1 BPY 62 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, < 10 s Collector surge current Emitter-Basisspannung Emitter-base voltage Verlustleistung, TA = 25 C Total power dissipation Warmewiderstand Thermal resistance Symbol Symbol Wert Value - 40 ... + 125 35 100 200 7 200 500 Einheit Unit C V mA mA V mW K/W Top; Tstg VCE IC ICS VEB Ptot RthJA 2007-04-03 2 BPY 62 Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Parameter Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der Chipflache Dimensions of chip area Halbwinkel Half angle Fotostrom der Kollektor-Basis-Fotodiode Photocurrent of collector-base photodiode Ee = 0.5 mW/cm2, VCB = 5 V Ev = 1000 Ix, Normlicht/standard light A, VCB = 5 V Kapazitat Capacitance VCE = 0 V, f = 1 MHz, E = 0 VCB = 0 V, f = 1 MHz, E = 0 VEB = 0 V, f = 1 MHz, E = 0 Dunkelstrom Dark current VCE = 20 V, E = 0 Symbol Symbol S max Wert Value 830 400 ... 1100 Einheit Unit nm nm A LxB LxW 0.11 0.5 x 0.5 8 mm2 mm x mm Grad deg. IPCB IPCB 5.5 17 A A CCE CCB CEB ICEO 7.5 14 19 1 ( 50) pF pF pF nA 2007-04-03 3 BPY 62 Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Parameter Fotostrom Photocurrent Ee= 0.5 mW/cm2, = 950 nm, VCE = 5 V Symbol Symbol -2 -3 Wert Value -4 -5 Einheit Unit IPCE Ev = 1000 Ix, Normlicht/standard light A, IPCE VCE = 5 V Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k Kollektor-Emitter-Sattigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) x 0.3, Ee = 0.5 mW/cm2 Stromverstarkung Current gain Ee = 0.5 mW/cm2, VCE =5 V 1) 1) 0.5...1.0 0.8...1.6 2.4 3.8 5 7 1.25...2.5 5.8 9 2.0 9.6 12 mA mA s tr, tf VCEsat 150 150 160 180 mV I PCE -------I PCB 140 220 340 550 - IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe. IPCEmin is the min. photocurrent of the specified group. 2007-04-03 4 BPY 62 Relative Spectral sensitivity Srel = f () 100 Photocurrent IPCE = f (Ee), VCE = 5 V Total Power Dissipation Ptot = f (TA) % 90 S re l 80 70 60 50 40 30 20 10 0 400 500 600 700 800 900 1000 1100 nm Output Characteristics IC = f (VCE), IB = Parameter Output Characteristics IC = f (VCE), IB = Parameter Dark Current ICEO = f (VCE), E = 0 10 nA I CEO 1 0.1 0.01 0 5 10 15 20 25 30 V 35 V CE Photocurrent IPCE/IPCE25o = f (TA), VCE = 5 V Dark Current ICEO = f (TA), VCE = 20 V, E = 0 10000 Collector-Emitter Capacitance CCE = f (VCE), f = 1 MHz, E = 0 8 nA 1000 pF 7 CCE 6 5 I CEO 100 10 4 3 2 1 0.1 1 0.01 -25 0 25 50 75 100 TA C 0 1E-03 1E-02 1E-01 1E+00 1E+01 VCE V 1E+02 2007-04-03 5 BPY 62 Collector-Base Capacitance CCB = f (VCB), f = 1 MHz, E = 0 16 Emitter-Base Capacitance CEB = f (VEB), f = 1 MHz, E = 0 22 pF 14 pF 20 CCB 12 10 CEB 18 16 14 12 8 10 6 4 8 6 4 2 0 1E-03 1E-02 1E-01 1E+00 1E+01 2 0 VCB V 1E+02 1E-03 1E-02 1E-01 1E+00 1E+01 VEB V 1E+02 Directional Characteristics Srel = f () 2007-04-03 6 BPY 62 Mazeichnung Package Outlines Chip position Radiant sensitive area o4.8 (0.189) o4.6 (0.181) (2.7 (0.106)) o0.45 (0.018) 3) .04 5) 3 0.0 1. 9( 0. 0 1( EC B 0.9 14.5 (0.571) 12.5 (0.492) 5.1 (0.201) 4.8 (0.189) 6.2 (0.244) 5.4 (0.213) (0 (0 .03 .04 5) 3) o5.6 (0.220) o5.3 (0.209) GMOY6019 Mae in mm (inch) / Dimensions in mm (inch). 2007-04-03 7 2.54 (0.100) spacing 1.1 BPY 62 Lotbedingungen Soldering Conditions Wellenloten (TTW) TTW Soldering (nach CECC 00802) (acc. to CECC 00802) 300 C T 250 235 C ... 260 C OHLY0598 10 s Normalkurve standard curve 2. Welle 2. wave Grenzkurven limit curves 200 1. Welle 1. wave 150 100 C ... 130 C 100 2 K/s 50 Zwangskuhlung forced cooling ca 200 K/s 5 K/s 2 K/s 0 0 50 100 150 t 200 s 250 Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2007-04-03 8 |
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