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MG400Q2YS60A MITSUBISHI IGBT Module MG400Q2YS60A High Power Switching Applications Motor Control Applications * * * * Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) The electrodes are isolated from case. Low thermal resistance. VCE (sat) = 2.4 V (typ.) Equivalent Circuit 1 5 6 7 FO E1/C2 4 1 2 3 OT FO E2 Signal terminal 1. 5. G (L) G (H) 2. 6. FO (L) FO (H) 3. 7. E (L) E (H) 4. 8. VD Open 2004-10-01 1/8 MG400Q2YS60A Package Dimensions 1. 5. G (L) G (H) 2. 6. FO (L) FO (H) 3. 7. E (L) E (H) 4. 8. VD Open Signal Terminal Layout 1. 7 5 8 2.54 25.4 0.6 6 2. 3. 4. 5. 6. 7. 2.54 8. G (L) FO (L) E (L) VD G (H) FO (H) E (H) Open 3 1 4 2 2.54 Weight: 375 g 2004-10-01 2/8 MG400Q2YS60A Maximum Ratings (Ta = 25C) Stage Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Inverter Forward current 1 ms Collector power dissipation (Tc = 25C) Control voltage (OT) Control Fault input voltage Fault input current Junction temperature Storage temperature range Module Operation temperature range Isolation voltage Screw torque DC 1 ms DC Symbol VCES VGES IC ICP IF IFM PC VD VFO IFO Tj Tstg Tope Visol Rating 1200 20 400 800 400 A 800 3750 20 20 20 150 -40~125 -20~100 2500 (AC 1 min) 3 (M5) W V V mA C C C V Nm Unit V V A Electrical Characteristics (Tj = 25C) 1. Inverter stage Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Switching time Turn-off time Fall time Reverse recovery time Forward voltage Symbol IGES ICES VGE (off) VCE (sat) Cies td (on) toff tf trr VF IF = 400 A Test Condition VGE = 20 V, VCE = 0 VGE = +10 V, VCE = 0 VCE = 1200 V, VGE = 0 VCE = 5 V, IC = 400 mA VGE = 15 V, IC = 400 A Tj = 25C Tj = 125C Min 6.0 0.10 VCC = 600 V, IC = 400 A VGE = 15 V, RG = 5.1 (Note 1) (See page 4) Typ. 7.0 2.4 31000 2.4 Max +3/-4 100 1.0 8.0 2.8 3.2 1.00 2.00 0.50 0.50 2.8 V s pF Unit mA nA mA V V VCE = 10 V, VGE = 0, f = 1 MHz Note 1: Switching time test circuit & timing chart 2. Control (Tc = 25C) Characteristics Fault output current Over temperature Fault output delay time Symbol OC OT td (Fo) Test Condition VGE = 15 V VCC = 600 V, VGE = 15 V Min 480 100 Typ. Max 125 8 Unit A C s 2004-10-01 3/8 MG400Q2YS60A 3. Module (Tc = 25C) Characteristics Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Rth (c-f) Test Condition Inverter IGBT stage Inverter FRD stage With silicon compound Min Typ. 0.013 Max 0.033 0.068 C/W Unit C/W Switching Time Test Circuit RG -VGE IF VCC IC RG L Timing Chart 90% 10% VGE 90% Irr Irr IC trr 20% Irr 90% 10% td (on) td (off) 10% tf 2004-10-01 4/8 MG400Q2YS60A Remark Short circuit capability is 6 s after fault output signal. Please keep following condition to use fault output signal. * VCC < 750 V = * 14.8 V < VGE < 17.0 V = = * RG > 5.1 = * Tj < 125C = To use this product, VGE must be provided higher than 14.8 V In case VGE is less than 14.8 V, fault signal FO may not be output even under error conditions. Characteristics P-N power terminal supply voltage Gate voltage Gate resistance Switching frequency Symbol VCC VGE RG fc Min 14.8 5.1 Typ. 600 15 Max 750 17 20 Unit V V kHz For parallel use of this product, please use the same rank for both VCE (sat) and VF among IGBT in parallel without fail. VCE (sat) 24 26 28 VF E F G Min 2.1 2.3 2.5 Max 2.4 2.6 2.8 2004-10-01 5/8 MG400Q2YS60A IC - VCE 800 Common emitter Tj = 25C VGE = 20 V 15 V 12 V 800 Common emitter Tj = 125C IC - VCE 15 V VGE = 20 V 12 V IC (A) 600 IC (A) 600 10 V 400 Collector current 400 10 V Collector current 9V 200 8V 200 9V 8V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) VCE - VGE 12 Common emitter 12 Common emitter VCE - VGE (V) Tj = 125C 10 (V) Tj = 25C 10 VCE 8 VCE 8 6 Collector-emitter voltage Collector-emitter voltage 6 IC = 800 A 4 400 A 2 200 A 0 0 4 400 A 2 IC = 800 A 200 A 0 0 5 10 15 20 5 10 15 20 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) VCE - VGE 12 Common emitter 800 Tj = -40C 10 Common emitter VCE = 5 V IC - VGE (V) IC (A) Collector current VCE 600 8 Collector-emitter voltage 6 400 25C 4 IC = 800 A 400 A 200 2 200 A 0 0 0 0 Tj = 125C -40C 5 10 15 20 4 8 12 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) 2004-10-01 6/8 MG400Q2YS60A IF - VF 800 1000 Common emitter Common cathode VGE = 0 V RL = 1.5 Tj = 25C VCE, VGE - QG 20 (V) 600 Forward current IF Collector-emitter voltage VCE 800 16 600 V 400 200 V VCC = 0 V 200 4 8 400 Tj = 125C -40C 200 25C 0 0 1 2 3 4 5 0 0 1000 2000 0 3000 Forward voltage VF (V) Charge QG (nC) SW time - RG 10000 1000 Common emitter VCC = 600 V toff IC = 400 A VGE = 15 V Eon, Eoff - RG (ns) 1000 td (off) ton td (on) tr 100 tf Common emitter VCC = 600 V IC = 400 A VGE = 15 V 5 10 15 Tj = 25C Tj = 125C 20 SW time Eon , Eoff (mJ) Tj = 25C Tj = 125C 100 Eoff SW loss Eon 10 0 10 0 5 10 15 20 Gate resistance RG () Gate resistance RG () SW time - IC 10000 100 Eon, Eoff - IC toff td (off) (mJ) (ns) 1000 ton tf Eoff SW time Eon, Eoff 10 Eon 100 td (on) Common emitter VCC = 600 V RG = 5.1 VGE = 15 V 100 200 300 Tj = 25C Tj = 125C 400 SW loss Common emitter VCC = 600 V RG = 5.1 VGE = 15 V 1 0 100 200 300 Tj = 25C Tj = 125C 400 tr 10 0 Collector current IC (A) Collector current IC (A) 2004-10-01 Gate-emitter voltage 600 400 V 12 VGE (V) (A) 7/8 MG400Q2YS60A Irr, trr - IF 1000 100 Common cathode Edsw - IF Edsw (mJ) VCC = 600 V RG = 5.1 VGE = 15 V Tj = 25C Tj = 125C Reverse recovery time trr (ns) Reverse recovery current Irr (A) 100 Irr trr Reverse recovery loss 10 Common cathode VCC = 600 V RG = 5.1 VGE = 15 V 10 0 100 200 300 Tj = 25C Tj = 125C 400 1 0 100 200 300 400 Forward current IF (A) Forward current IF (A) C - VCE 100000 Cies 1000 Safe-operating area IC max (pulsed)* IC (A) (pF) IC max (continuous) 100 100 s 50 s 10000 C Capacitance Coes Collector current 1000 Common emitter VGE = 0 V f = 1 MHz Tj = 25C 100 0.01 0.1 1 10 100 Cres *: Single nonrepetitive 10 pulse Tc = 25C Curves must be derated linearly with increase in temperature. 1 1 10 1 ms 100 1000 10000 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) Reverse bias SOA 800 1 Rth - tw TC = 25C IC (A) 600 Rth (j-c) (C/W) Collector current 0.1 Diode stage 400 Transistor stage 0.01 200 Tj < 125C = RG = 5.1 VGE = 15 V 400 800 1200 0 0 0.001 0.001 0.01 0.1 1 10 Collector-emitter voltage VCE (V) Pulse width tw (s) 2004-10-01 8/8 |
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