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| VUO 22 Three Phase Rectifier Bridge IdAVM = 25 A VRRM = 800-1800 V VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 Type 10 8 6 1/2 45 12 VUO 22-08NO1 VUO 22-12NO1 VUO 22-14NO1 VUO 22-16NO1 VUO 22-18NO1 4/5 6 8 10 Symbol IdAV IdAV IdAVM IFSM Test Conditions TK = 90C, module TA = 45C (RthKA = 0.5 K/W), module module TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 22 25 25 100 106 85 90 50 47 36 33 -40...+130 130 -40...+125 A A A A A A A A2s A2s A2s A2s C C C V~ V~ Nm lb.in. g Features Package with DCB ceramic base plate Isolation voltage 3600 V~ Planar passivated chips Blocking voltage up to 1800 V Low forward voltage drop Leads suitable for PC board soldering UL registered E72873 q q q q q q q I2t TVJ = 45C VR = 0 TVJ = TVJM VR = 0 Applications Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors q q q q TVJ TVJM Tstg VISOL Md Weight Symbol IR VF VT0 rT RthJH dS dA a 50/60 Hz, RMS IISOL 1 mA Mounting torque typ. Test Conditions VR = VRRM VR = VRRM IF = 7 A; TVJ = 25C TVJ = TVJM TVJ = 25C t = 1 min t=1s (M5) (10-32UNF) q q q 3000 3600 2 - 2.5 18-22 35 Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394") Characteristic Values 0.3 5 1.12 0.8 40 3.1 0.516 12.7 9.4 50 mA mA V V mW K/W K/W mm mm m/s2 For power-loss calculations only per diode, 120 rect. per module, 120 rect. Creeping distance on surface Creepage distance in air Max. allowable acceleration Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2000 IXYS All rights reserved 1-2 VUO 22 30 IF A 25 TVJ = 25C TVJ = 130C 20 60 max. 15 typ. 10 20 40 100 IFSM A 80 50 Hz 0.8 x VRRM 100 A2s I2dt TVJ = 45C TVJ = 45C TVJ = 130C TVJ = 130C 5 0 0.0 0.5 1.0 1.5 2.0 V 2.5 VF 0 10-3 10 10-2 10-1 t s 100 1 ms t 10 Fig. 1 Forward current versus voltage drop per diode 100 Ptot W 80 Fig. 2 Surge overload current per diode IFSM: Crest value. t:duration RthKA K/W 0.5 1 1.5 2 3 4 6 Fig. 3 I2t versus time (1-10 ms) per diode 30 A 25 IdAVM 20 60 15 40 10 20 5 0 0 5 10 15 20 25 A 0 IdAVM 25 50 75 100 125 C 150 TA 0 0 25 50 75 100 125 C 150 TK Fig. 4 Power dissipation versus direct output current and ambient temperature 3.5 K/W ZthJK 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10-3 ZthJK Fig. 5 Maximum forward current at heatsink temperature TK Constants for ZthJK calculation: i 1 2 3 4 10-2 10-1 100 101 s t 102 Rth (K/W) 0.015 0.1 1.635 1.35 ti (s) 0.008 0.02 0.05 0.4 Fig. 6 Transient thermal impedance junction to heatsink per diode (c) 2000 IXYS All rights reserved 2-2 |
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