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| UTC UT131 TRIACS LOGIC LEVEL DESCRIPTION Passivated, sensitive gate triaces in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers. logic integrated circuits and other low power gate trigger circuits. 1 TRIAC SYMBOL MT2 TO-92 G MT1 1:MT1 2:GATE 3:MT2 ABSOLUTE MAXIMUM RATINGS PARAMETER Repetitive Peak Off-State Voltage UT131-5 UT131-6 UT131-8 RMS On-State Current Full Sine Wave; Tlead51C Non-Repetitive Peak On-State Current (Full Sine Wave; Tj=25C prior to surge) t=20ms t=16.7ms Circuit Fusing t=10ms Repetitive Rate of Rise of On-State Current after Triggering ITM=1.5A, IG=0.2A, dIG/dt=0.2A/s T2+ G+ T2+ GT2- GT2- G+ Peak Gate Voltage Peak Gate Current Peak Gate Power Average Gate Power (over any 20ms period) Operating Junction Temperature Storage temperature VDRM 500* 600* 800* 1 V SYMBOL RATINGS UNIT IT(RMS) A ITSM 16 17.6 1.28 A I2t A2s dIT/dt 50 50 50 10 5 2 5 0.5 125 -40~150 A/s VGM IGM PGM PG(AV) Tj Tstg V A W W C C UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R401-006,C UTC UT131 TRIAC *Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/s. THERMAL RESISTANCES PARAMETER Thermal Resistance Junction to Lead Full Cycle Half Cycle Thermal Resistance junciton to Ambient (PCB mounted ;lead length=4mm) SYMBOL Rth j-lead Rth j-lead MIN TYP MAX 60 80 UNIT K/W K/W 150 STATIC CHARACTERISTICS (Tj=25C,unless otherwise specified) PARAMETER Gate Trigger Current IGT SYMBOL TEST CONDITIONS VD=12V, IT=0.1A T2+ G+ T2+ GT2- GT2- G+ VD=12V, IGT=0.1A T2+ G+ T2+ GT2- GT2- G+ VD=12V, IGT=0.1A IT=2.0A VD=12V, IT=0.1A VD=400V, IT=0.1A, Tj=125C VD=VDRM(max), Tj=125C MIN TYP 0.4 1.3 1.4 3.8 1.2 4.0 1.0 2.5 1.3 1.2 0.7 0.3 0.1 MAX UNIT 3 3 5 7 5 8 5 8 5 1.5 1.5 0.5 mA Latching Current IL mA Holding Current On-State Voltage Gate Trigger Voltage Off-state Leakage Current IH VT VGT ID 0.2 mA V V V mA DYNAMIC CHARACTERISTICS(Tj=25C,unless otherwise specified) PARAMETER Critical Rate of Rise of off-state Voltage Gate Controlled Turn-on Time SYMBOL dVD/dt tgt TEST CONDITIONS VDM=67% VDRM(max), Tj=125C Exponential waveform,RGK=1k ITM=1.5A,VD=VDRM(max), IG=0.1A dIG/dt=5A/s MIN 5 TYP 15 2 MAX UNIT V/s s UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R401-006,C UTC UT131 TYPICAL CHARACTERISTICS Figure 1.Maximum on -state Dissipation.Ptot vs RMS Onstate Current,IT(RMS),Where =conduction Angle. Tsp(max)/C 1.4 Ptot/W 104 1.2 1 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 IT(RMS)/A 1 =180 107 TRIAC Figure 4.Maximum Permissible RMS Current IT(RMS) vs Lead Temperature Tlead 1.2 1 0.8 0.6 0.4 0.2 0 -50 0 50 Tsp/ Figure 5.Maximum Permissible Repetitive RMS on-state Current IT(RMS),vs Surge Duration,for Sinusoidal Currents,f=50Hz;Tlead 51 IT(RMS)/A 100 150 IT(RMS)/A 108 110 =120 =90 113 =60 116 =30 119 122 125 1.2 1000 Figure 2. Maximum Permissible Non-repetitive Peak On-state Current ITSM,vs Pulse Width tp,for Sinusoidal Currents,tp 20ms ITSM/A IT ITSM time Tj initial=25max 3 2.5 2.0 100 dIT/dt limit T2-G+ quadrant 10 10us 100us 1ms T/s 10ms 100ms 1.5 1 0.5 0 0.01 0.1 1 Surge Duration /S 10 12 10 8 6 4 2 0 1 Figure 3 .Maximum Permissible Non-Repetitive peak on-state Current ITSM,vs Number of Cycles, for Sinusoidal Currents,f=50Hz ITSM/A IT ITSM time Tj initial=25max Figure 6.Normalised Gate Trigger Voltage VGT(Tj)/ VGT(25),vs Junction Temperature Tj VGT(Tj) VGT(25) 1.6 1.4 1.2 1 0.8 0.6 100 10 Number of Cycles at 50Hz 1000 0.4 -50 0 50 Tj/ 100 150 UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R401-006,C UTC UT131 Figure 7.Normalised G ate Trigger current IGT(Tj)/IGT(25),vs Junction Temperature Tj 2 T 2+G + T2+GT2-G T2-G + IT/A Tj=125 1.5 Tj=25 Vo=1.0V 1 Rs=0.21Ohms 0.5 .5 0 -50 0 0 50 T j/ 100 150 0 0.5 1 VT/V 1.5 typ TRIAC Figure 10.Typical and Maximum On-state Characteristic IGT(Tj) 3 2.5 2 1.5 1 IGT(25) max 2 IL(Tj) 3 2.5 2 1.5 1 Figure 8.Normalised Latching Current IL(Tj)/IL(25),vs Junction T emperature T j 100 Figure 11.T ransient T hermal Impedance Zth j-lead,vs Pulse W idth tp Zth j-sp(K/W ) IL(25) 10 unidirectional 1 bidirectional PD tp t 0 50 Tj/ Figure 9.Normalised Holding Current IH(Tj)/IH(25),vs Junction Temperature Tj IH(Tj) IH(25) 100 150 0.01 10us 0.1ms 1ms 10ms tp/s Figure 12.T ypical Critical Rate of Rise of off-state Voltage, dVD/dt vs Junction Temperature Tj 1000 dVD/dt(V/us) 0.1s 1s 10s 0.1 .5 0 -50 3 2.5 2 1.5 1 .5 0 100 10 1 -50 0 50 Tj/ 100 150 0 50 Tj/ 100 150 UTC UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R401-006,C UTC UT131 TRIAC UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 5 QW-R401-006,C |
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