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| STY30NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STY30NA50 s s V DSS 500 V R DS(on) < 0.175 ID 30 A s s s s s s TYPICAL RDS(on) = 0.15 EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED LOW INTRINSIC CAPACITANCE 100% AVALANCHE TESTED GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TM Max247TM DESCRIPTION T he Max247 package is a new high volume power package exibiting the same footprint as the industry standard T O-247, but designed to accomodate much larger silicon chips, normally supplied in bigger packages such as TO -264. The increased die capacity makes the device ideal to reduce component count in multiple paralleled designs and save board space with respect to larger packages. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES (UPS) ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM (*) P t ot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor T stg Tj St orage Temperature Max. Operating Junction Temperature o o o Value 500 500 30 30 19 120 300 2.4 -55 to 150 150 Uni t V V V A A A W W/ o C o o C C (*) Pulse width limited by safe operating area March 1996 1/4 STY30NA50 THERMAL DATA R t hj-ca se R t hj- amb R thc- si nk Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-Heatsink with Conductive Grease Max Max Typ 0.42 40 0.05 o o C/W C/W AVALANCHE CHARACTERISTICS Symb ol I AR E AS E AR I AR Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, < 1%) Single Pulse Avalanche Energy o (starting Tj = 25 C, ID = I AR , V DD = 50 V) Repetitive Avalanche Energy (pulse width limited by Tj max, < 1%) Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by Tj max, < 1%) Max Valu e 30 3000 180 19 Unit A mJ mJ A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 250 A VGS = 0 Min. 500 200 1000 100 Typ . Max. Un it V A A nA V DS = Max Rating Zero Gate Voltage o Drain Current (V GS = 0) V DS = Max Rating x 0.8 T c = 125 C Gate-body Leakage Current (V DS = 0) V GS = 30 V ON () Symb ol V GS(th) R DS( on) ID(o n) Parameter Gate T hreshold Voltage V DS = VGS Static Drain-source On Resistance On State Drain Current Test Cond ition s ID = 250 A T c = 100 C 30 o Min. 2.25 Typ . 3 0.15 Max. 3.75 0.175 0.35 Un it V A V GS = 10 V ID = 15 A V GS = 10 V ID = 15 A V DS > I D(on) x R DS(on) max V GS = 10 V DYNAMIC Symb ol g fs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Cond ition s V DS > I D(on) x R DS(on) max V DS = 25 V f = 1 MHz I D = 15 A VGS = 0 Min. 25 6150 780 220 8000 1000 290 Typ . Max. Un it S pF pF pF 2/4 STY30NA50 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol t d(on) tr (di/dt) on Parameter Turn-on T ime Rise Time Turn-on Current Slope Test Cond ition s V DD = 250 V R G = 4.7 V DD = 400 V R G = 47 V DD = 400 V I D = 30 A ID = 15 A VGS = 10 V ID = 30 A VGS = 10 V VGS = 10 V Min. Typ . 40 70 240 Max. 55 90 Un it ns ns A/s Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge 245 27 120 320 nC nC nC SWITCHING OFF Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall T ime Cross-over T ime Test Cond ition s V DD = 400 V R G = 4.7 I D = 30 A V GS = 10 V Min. Typ . 75 30 110 Max. 100 40 145 Un it ns ns ns SOURCE DRAIN DIODE Symb ol I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward O n Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 30 A I SD = 30 A V DD = 100 V V GS = 0 di/dt = 100 A/s o T j = 150 C 800 17.6 44 Test Cond ition s Min. Typ . Max. 30 120 1.6 Un it A A V ns C A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area 3/4 STY30NA50 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4 |
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