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| Product Description Stanford Microdevices' SSW-308 is a high perfomance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable small outline plastic package. This single-pole, double-throw, reflective switch consumes less than 40uA and operates with 0V/-5V control voltages. This switch can be used in both analog and digital wireless communication systems including AMPS, PCS, DECT, and GSM. Typical output power at 1dB compression is +28dBm. 1dB output power over 1 watt may be achieved with higher control voltages. The die is fabricated using 0.5 micron FET process with gold metallization and silicon nitride passivation to achieve excellent performance and reliability. Isolation vs. Frequency VControl = -5 V -10 -20 SSW-308 DC-3 GHz Low Cost GaAs MMIC SPDT Switch Product Features * Fast Switching Speed : 3nsec * HIgh LInearity : +47dBm IP3 * Ultra Low DC Power Consumption * Low Insertion Loss : 0.7dB at 1GHz * Low Cost Small Outline Plastic Package Applications * Digital Cellular * Spread Spectrum dB -30 -40 -50 D C 1 2 3 GHz Switches Electrical Specifications at Ta = 25C Sym bol P a r a m e te r s : T e s t C o n d itio n s : Z 0= 5 0 o h m s U n its M in . Ty p . M ax. In s In s e r tio n L o s s f = 0 .0 5 - 1 .0 G H z f = 1 .0 0 - 2 .0 G H z f = 1 .0 0 - 3 .0 G H z f = 0 .0 5 - 1 .0 G H z f = 1 .0 0 - 2 .0 G H z f = 1 .0 0 - 3 .0 G H z f = 0 .0 5 - 1 .0 G H z f = 1 .0 0 - 2 .0 G H z f = 1 .0 0 - 3 .0 G H z V = -8 V V = -5 V V = -8 V V = -5 V dB dB dB dB dB dB 20 17 dBm dBm dBm dBm uA nsec 0 .6 0 .9 1 .2 25 22 16 1 .2 :1 1 .4 :1 1 .7 :1 +31 +28 +50 +47 35 3 0 .9 1 .3 Is o l Is o la tio n VSW R on In p u t & O u tp u t V S W R ( lo w lo s s s ta te ) 1 d B C o m p r e s s io n a t 0 .5 - 2 .0 G H z T h ir d O r d e r In te r c e p t D e v ic e C u r r e n t S w itc h in g S p e e d 5 0 % c o n tr o l to 1 0 % /9 0 % R F P 1dB IP 3 ID Is w The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com 7-21 SSW-308 DC-3 GHz GaAs MMIC SPDT Switch Absolute Maximum Ratings RF Input Power Control Voltage Operating Temperature Storage Temperature Thermal Resistance 2W Max>500MHz -10V -45Cto +85C -65C to +150C 20 deg C/W Truth Table V1 V2 J1- J2 J1- J3 0 -5 -5 0 Low Loss I sol at i on I sol at i on Low Loss Pin Out Pin Function Switch Schematic 1 2 3 4 5 6 7 8 V1 J1 GND V2 J3 GND GND J2 Switches Insertion Loss vs. Frequency VControl = -5 V 0.0 -0.5 2.0 1.8 1.6 On Port VSWR vs. Frequency VControl = -5 V dB -1.0 1.4 -1.5 -2.0 D C 1 2 3 1.2 1.0 D C 1 2 3 GHz GHz 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com 7-22 |
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