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| Product Description Stanford Microdevices' SSW-208 is a high perfomance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable small outline plastic package. This single-pole, double-throw, non-reflective switch consumes less than 50uA and operates at -5V and 0V for control bias. Its high isolation and low insertion loss makes it ideal for T/R switching in analog and digital wireless communication systems. The die is fabricated using 0.5 micron FET process with gold metallization and silicon nitride passivation to achieve excellent performance and reliability. SSW-208 DC-4 GHz, High Isolation GaAs MMIC SPDT Switch Isolation vs. Frequency VControl = -5 V -20 -30 -40 dB Product Features * High Isolation: 22dB at 2GHz * Low DC Power Consumption * Low Insertion Loss: 0.9dB at 2GHz * Broad Performance - True DC Operation * Low Cost Small Outline Plastic Package Applications * Analog/Digital Wireless System * Spread Spectrum * GPS Switches -50 -60 -70 D C 1 2 3 4 GHz Electrical Specifications at Ta = 25C Sym bol P a r a m e t e r s : T e s t C o n d it io n s U n it s M in . Ty p . M ax. In s In s e rtio n L o s s f = 0 .0 5 -1 .0 G H z f = 1 .0 0 -2 .0 G H z f = 2 .0 0 -4 .0 G H z f = 0 .0 5 -1 .0 G H z f = 1 .0 0 -2 .0 G H z f = 2 .0 0 -4 .0 G H z f = 0 .0 5 -1 .0 G H z f = 1 .0 0 -2 .0 G H z f = 2 .0 0 -4 .0 G H z V = -5 V V = -8 V V = -5 V V = -8 V dB dB dB dB dB dB 25 20 0 .8 0 .9 1 .4 40 30 25 1 .1 5 1 .2 5 1 .5 0 1 .3 1 .4 Is o l Is o la tio n VSW R on In p u t & O u tp u t V S W R (o n o r lo w lo s s s ta te ) O u tp u t P o w e r a t 1 d B C o m p re s s io n f = 0 .5 -4 .0 G H z T h ird O rd e r In te rc e p t P o in t f = 0 .5 -4 .0 G H z D e v ic e C u rre n t S w itc h in g S p e e d 5 0 % c o n tro l to 1 0 % /9 0 % R F P1dB T O IP Id Is w dBm dBm dBm dBm uA nsec +26 +29 +45 +48 40 3 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com 7-13 SSW-208 DC-6 GHz Absorptive SPDT GaAs Switch Absolute Maximum Ratings RF Input Power C on tro l Vol ta ge Operating Te m p e r a t u r e Storage Te m p e r a t u r e Thermal Resistanc e 2W M ax>500MHz -10V -45C to + 85C Truth Table V1 V2 J1-J2 J1-J3 0 -5 -5 0 Low Lo ss Isolation Isolation Low Lo ss -65C to + 150C 2 0 de g C /W Pin Out Pin Function Switch Schematic 1 2 3 4 5 6 7 8 GND J1 GND GND J2 V1 V2 J3 Switches Insertion Loss vs. Frequency VControl = -5 V 0.0 -0.5 On Port Input/Output VSWR vs. Frequency VControl = -5 V 2.0 1.8 1.6 dB -1.0 1.4 -1.5 -2.0 DC 1 2 3 4 1.2 1.0 DC 1 2 3 4 GHz GHz 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com 7-14 |
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