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| SRF820H NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SRF820H is Designed for High Power Class C Amplifier applications, in 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .500 6L FLG C A 4 D 1 2x ON FU LL R FEATURES: * Internal Input Matching Network * PG = 8.4 dB at 70 W/400 MHz * OmnigoldTM Metalization System * Available in matched pairs and quads DIM 2 B G .725/18,42 F 3 E K H M INIM UM inches / m m M L J I M A XIM UM inches / m m MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG JC 8.0 A 60 V 30 V 4.0 V 220 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 1.25 C/W A B C D E F G H I J K L M N .150 / 3.43 .045 / 1.14 .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 .125 / 3.18 .725 / 18.42 .970 / 24.64 .090 / 2.29 .150 / 3.81 .120 / 3.05 .160 / 4.06 .220 / 5.59 .865 / 21.97 .210 / 5.33 .510 / 12.95 .007 / 0.18 .980 / 24.89 .105 / 2.67 .170 / 4.32 .285 / 7.24 .135 / 3.43 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER ORDER CODE: ASI10474 CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO ICBO hFE COB PG POUT IC = 50 mA IC = 50 mA IE = 10 mA VCB = 30 V VCE = 5.0 V VCB = 28 V VCC = 28 V TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 30 60 4.0 5.0 UNITS V V V mA --pF dB W IC = 2.0 A f = 1.0 MHz PIN = 70 W f = 400 MHz 20 80 80 8.4 70 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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