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 SFH 217 SFH 217 F
Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silicon PIN Photodiode with Very Short Switching Time Silicon PIN Photodiode with Daylight Filter
SFH 217 SFH 217 F
Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
q Speziell geeignet fur Anwendungen im
Bereich von 400 nm bis 1100 nm (SFH 217) und bei 880 nm (SFH 217 F) q Kurze Schaltzeit (typ. 5 ns) q 5 mm-Plastikbauform im LED-Gehause Anwendungen
q Industrieelektronik q "Messen/Steuern/Regeln" q Schnelle Lichtschranken fur Gleich- und
Features q Especially suitable for applications from 400 nm to 1100 nm (SFH 217) and of 880 nm (SFH 217 F) q Short switching time (typ. 5 ns) q 5 mm LED plastic package Applications
q Industrial electronics q For control and drive circuits q Light reflecting switches for steady and
Wechsellichtbetrieb q LWL Typ (*ab 4/95) Bestellnummer Type (*as of 4/95) Ordering Code SFH 217 (*SFH 203 P) SFH 217 F (*SFH 203 PFA) Q62702-P946 Q62702-P947
varying intensity q Fiber optic transmission systems Gehause Package plan, klares bzw. schwarzes Epoxy-Gieharz, Lotspiee im 2.54-mm-Raster (1/10) Kathodenkennzeichnung: Kurzerer Lotspie, flach am Gehausebund plane, transparent and black epoxy resin, solder tab 2.54 mm (1/10) lead spacing, cathode marking: short solder tab, flat at package
SFH 217 SFH 217 F
Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur (Lotstelle 2 mm vom Gehause entfernt bei Lotzeit t 3s) Soldering temperature in 2 mm distance from case bottom (t 3s) Sperrspannung Reverse voltage Verlustleistung Total power dissipation Symbol Symbol Top; Tstg TS Wert Value -55 ... +100 300 Einheit Unit
o
C
oC
VR Ptot
50 100
V mW
Kennwerte (TA = 25 oC) Characteristics Bezeichnung Description Fotoempfindlichkeit Spectral sensitivity VR = 5 V, Normlicht/standard light A, T = 2856 K VR = 5 V, = 950 nm, Ee = 0.5 mW/cm2 Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Symbol Wert Symbol Value SFH 217 SFH 217 F Einheit Unit
S S S max
9.5 ( 5) - 850
- 3.1 ( 1.8) 900
nA/Ix A nm
400 ... 1100 750 ... 1100 nm
A LxB LxW H
1 1x1
1 1x1
mm2 mm
0.4 ... 0.7
0.4 ... 0.7
mm
SFH 217 SFH 217 F
Kennwerte (TA = 25 oC) Characteristics Bezeichnung Description Halbwinkel Half angle Dunkelstrom, VR = 20 V Dark current Spektrale Fotoempfindlichkeit, = 850 nm Spectral sensitivity Quantenausbeute, = 850 nm Quantum yield Leerlaufspannung Open-circuit voltage Ev = 1000 Ix, Normlicht/standard light A, T = 2856 K Ee = 0.5 mW/cm2, = 950 nm Kurzschlustrom Short-circuit current Ev = 1000 Ix, Normlicht/standard light A, T = 2856 K Ee = 0.5 mW/cm2, = 950 nm Anstiegs und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL= 50 ; VR = 20 V; = 850 nm; Ip = 800 A Durchlaspannung, IF = 80 mA, E = 0 Forward voltage Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VL Temperature coefficient of VL Temperaturkoeffizient von IK, Temperature coefficient of IK Normlicht/standard light A, = 950 nm Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 20 V, = 850 nm Nachweisgrenze, VR = 20 V, = 850 nm Detection limit Symbol Wert Symbol Value SFH 217 IR S 75 1 ( 10) 0.62 0.89 SFH 217 F 75 1 ( 10) 0.59 0.86 Grad deg. nA A/W Electrons Photon Einheit Unit
VL VL
350 ( 300) -
- 300 ( 250)
mV mV
IK IK tr, tf
9.3 - 5
- 3.0 5
A A ns
VF C0 TCV TCI
1.3 11 -2.6
1.3 11 -2.6
V pF mV/K %/K
0.18 - NEP 2.9 x 10-14
- 0.2 2.9 x 10-14 W Hz cm * Hz W
D*
3.5 x 1012
3.5 x 1012
SFH 217 SFH 217 F
Relative spectral sensitivity SFH 217 Srel = f () Relative spectral sensitivity SFH 217 F Srel = f () Photocurrent IP = f (Ev), VR = 5 V Open-circuit-voltage SFH 217 VL= f (Ev)
Photocurrent IP = f (Ee), VR = 5 V Open-circuit-voltage SFH 217 F VL= f (Ee)
Total power dissipation Ptot = f (TA)
Dark current IR = f (VR), E = 0
Directional characteristics Srel = f ()
Capacitance C = f (VR), f = 1 MHz, E = 0


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