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| Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK D-678 To Order Previous Datasheet Index Next Data Sheet Bulletin I2092/B SD553C..S50L SERIES FAST RECOVERY DIODES Features High power FAST recovery diode series 6.0 s recovery time High voltage ratings up to 4500V High current capability Optimized turn on and turn off characteristics Low forward recovery Fast and soft reverse recovery Press-puk encapsulation Case style conform to JEDEC DO-200AB (B-PUK) Maximum junction temperature 125C Hockey Puk Version 560A Typical Applications Snubber diode for GTO High voltage free-wheeling diode Fast recovery rectifier applications case style DO-200AB (B-PUK) Major Ratings and Characteristics Parameters IF(AV) @ Ths IF(RMS) @ Ths IFSM @ 50Hz @ 60Hz It 2 SD553C..S50L 560 55 1120 25 12000 12570 721 658 3000 to 4500 6.0 Units A C A C A A KA2s KA2s V s C C @ 50Hz @ 60Hz VRRM range trr @ TJ TJ 125 - 40 to 125 D-679 To Order Previous Datasheet Index Next Data Sheet SD553C..S50L Series ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code 30 36 SD553C..S50L 40 45 VRRM , maximum repetitive peak reverse voltage V 3000 3600 4000 4500 VRSM , maximum nonrepetitive peak rev. voltage V 3100 3700 4100 4600 IRRM max. @ TJ = 125C mA 75 Forward Conduction Parameter I F(AV) Max. average forward current @ Heatsink temperature I F(RMS) Max. RMS forward current I FSM Max. peak, one-cycle forward, non-repetitive surge current SD553C..S50L 560 (210) 55 (85) 1120 12000 12570 10100 10570 Units A C A Conditions 180 conduction, half sine wave Double side (single side) cooled @ 25C heatsink temperature double side cooled t = 10ms t = 8.3ms No voltage reapplied 50% VRRM reapplied No voltage reapplied 50% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max. A t = 10ms t = 8.3ms t = 10ms t = 8.3ms I2 t Maximum I2t for fusing 721 658 510 466 KA2s t = 10ms t = 8.3ms I 2 t Maximum I2t for fusing 7210 1.77 KA2s t = 0.1 to 10ms, no voltage reapplied (16.7% x x IF(AV) < I < x IF(AV)), TJ = TJ max. V F(TO)1 Low level value of threshold voltage V F(TO)2 High level value of threshold voltage r f1 V 1.95 (I > x IF(AV)),TJ = TJ max. (16.7% x x IF(AV) < I < x IF(AV)), TJ = TJ max. m 0.89 3.24 V (I > x IF(AV)),TJ = TJ max. I = 1500A, TJ = 125C, t = 10ms sinusoidal wave pk p Low level value of forward slope resistance 0.98 r f2 High level value of forward slope resistance V FM Max. forward voltage drop Recovery Characteristics Code TJ = 25 oC Typical t rr Test conditions I di/dt V Max. values @ TJ = 125 C r pk t rr Q rr I rr @ 25% IRRM (s) Square Pulse (A) 1000 (A/s) 100 (V) - 50 @ 25% IRRM (s) 6.0 (C) 900 (A) 250 S50 5.0 D-680 To Order Previous Datasheet Index Next Data Sheet SD553C..S50L Series Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Fig. 5 - Forward Power Loss Characteristics Fig. 6 - Forward Power Loss Characteristics Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled D-683 To Order Previous Datasheet Index Next Data Sheet SD553C..S50L Series Fig. 9 - Forward Voltage Drop Characteristics Fig. 10 - Thermal Impedance ZthJ-hs Characteristic Fig. 11 - Typical Forward Recovery Characteristics Fig. 12 - Recovery Time Characteristics Fig. 13 - Recovery Charge Characteristics Fig. 14 - Recovery Current Characteristics D-684 To Order Previous Datasheet Index Next Data Sheet SD553C..S50L Series Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 16 - Frequency Characteristics Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 18 - Frequency Characteristics Fig. 19 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 20 - Frequency Characteristics D-685 To Order Previous Datasheet Index Next Data Sheet SD553C..S50L Series Thermal and Mechanical Specifications Parameter TJ T stg SD553C..S50L -40 to 125 -40 to 150 0.073 0.031 14700 (1500) Units C Conditions Max. junction operating temperature range Max. storage temperature range RthJ-hs Max. thermal resistance, junction to heatsink F Mounting force, 10% DC operation single side cooled K/W N (Kg) g Conforms to JEDEC DC operation double side cooled wt Approximate weight Case style 255 DO-200AB (B-PUK) RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Sinusoidal conduction Conduction angle 180 120 90 60 30 Single Side Double Side 0.009 0.009 0.011 0.014 0.020 0.036 0.011 0.014 0.020 0.036 Rectangular conduction Units Single Side Double Side 0.006 0.006 0.011 0.015 0.021 0.036 0.011 0.015 0.021 0.036 K/W Conditions TJ = TJ max. Ordering Information Table Device Code SD 1 1 2 3 4 5 6 7 Diode Essential part number 3 = Fast recovery C = Ceramic Puk 55 2 3 3 C 4 45 S50 5 6 L 7 Voltage code: Code x 100 = VRRM (See Voltage Ratings table) t rr code L = Puk Case DO-200AB (B-PUK) D-681 To Order Previous Datasheet Index Next Data Sheet SD553C..S50L Series Outline Table 3.5(0.14) DIA. NOM. x 1.8(0.07) DEEP MIN. BOTH ENDS 58.5 (2.3 0) D IA . M AX . Conforms to JEDEC DO-200AB (B-PUK) 0.8 (0.03) BOTH ENDS 34 (1.34) DIA. MAX. TWO PLACES All dimensions in millimeters (inches) 26.9 (1.06) 25 .4 (1) 53 (2.09) DIA. MAX. Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics D-682 To Order |
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