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Semiconductor
RFM18N08, RFM18N10, RFP18N08, RFP18N10
18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17421.
BRAND RFM18N08 RFM18N10 RFP18N08 RFP18N10
G
September 1998
[ /Title (RFM18 N08, RFM18 N10, RFP18N 08, RFP18N 10) /Subject 18A, 0V and 00V, .1 Ohm, -Chanel ower OSETs) /Author ) /Keyords Harris emionducor, Nhannel ower OSETs, O04AA, O20AB) /Creator ) /DOCIN O pdfark
Features
* 18A, 80V and 100V * rDS(ON) = 0.100 * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
Ordering Information
PART NUMBER RFM18N08 RFM18N10 RFP18N08 RFP18N10 PACKAGE TO-204AA TO-204AA TO-220AB TO-220AB
Symbol
D
NOTE: When ordering, use the entire part number.
S
Packaging
JEDEC TO-204AA
DRAIN (FLANGE) DRAIN (TAB)
JEDEC TO-220AB
SOURCE DRAIN GATE
SOURCE (PIN 2) GATE (PIN 1)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright
(c) Harris Corporation 1998
File Number
1446.1
5-1
RFM18N08, RFM18N10, RFP18N08, RFP18N10
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified RFM18N08 80 80 18 45 20 100 0.8 -55 to 150 300 260 RFM18N10 100 100 18 45 20 100 0.8 -55 to 150 300 260 RFP18N08 80 80 18 45 20 75 0.6 -55 to 150 300 260 RFP18N10 100 100 18 45 20 75 0.6 -55 to 150 300 260 UNITS V V A A V W W/oC oC
oC oC
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . Tpkg
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to 125oC.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250A, VGS = 0V 80 100 VGS(TH) VGS = VDS, ID = 250A, (Figure 8) IDSS VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC 2 VDS = 25V, VGS = 0V, f = 1MHz, (Figure 9) RFM18N08, RFM18N10 RFP18N08, RFP18N10 60 300 150 150 4 1 25 100 0.100 1.8 90 450 225 225 1700 750 300 1.25 1.67 V V V A A nA V ns ns ns ns pF pF pF
oC/W oC/W
MIN
TYP
MAX UNITS
Drain to Source Breakdown Voltage RFM18N08, RFP18N08 RFM18N10, RFP18N10 Gate Threshold Voltage Zero Gate Voltage Drain Current
Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Drain to Source On Voltage (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse-Transfer Capacitance Thermal Resistance Junction to Case
IGSS rDS(ON)
VGS = 20V, VDS = 0V ID = 18A, VGS = 10V, (Figures 6, 7) VDD = 50V, ID 9A, RG = 50, VGS = 10V, RL = 5.5 (Figures 10, 11, 12)
VDS(ON) ID = 18A, VGS = 10V td(ON) tr td(OFF) tf CISS COSS CRSS RJC
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time NOTES: 2. Pulse test: width 300s, duty cycle 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. SYMBOL VSD trr TEST CONDITIONS ISD = 9A ISD = 4A, dISD/dt = 100A/s MIN TYP 150 MAX 1.4 UNITS V ns
5-2
RFM18N08, RFM18N10, RFP18N08, RFP18N10 Typical Performance Curves Unless Otherwise Specified
1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 20 18 16 14 12 10 8 6 4 2 0 50 100 150 0 25 50 75 100 125 150 RFP18N08, RFP18N10 RFM18N08, RFM18N10
0.8 0.6 0.4 0.2 0
TC, CASE TEMPERATURE (oC)
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
100 TJ = MAX RATED TC = 25oC CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE
ER AT IO
35 30 ID, DRAIN CURRENT (A) 25 VG = 7V 20 15 10 5 PULSE DURATION = 80s DUTY CYCLE 2% TC = 25oC VG = 6V VG = 5V VG = 4V VG = 20V VG = 10V VG = 8V
ID, DRAIN CURRENT
10
DC
OP
OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1
N
0.1 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 1000
0 0 1 2 3 4 5 6 VDS, DRAIN TO SOURCE (V) 7 8
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
40 IDS(ON), DRAIN TO SOURCE CURRENT
0.14 0.12 125oC rDS(ON), DRAIN TO SOURCE ON RESISTANCE () 0.10 0.08 0.06 0.04 PULSE DURATION = 80s 0.02 DUTY CYCLE 2% TC = 25oC VGS = 10V 0 0 5 10 15 20 25 ID, DRAIN CURRENT (A) 25oC -40oC 125oC
VDS = 10V 35 PULSE DURATION = 80s DUTY CYCLE 2% o 30 TC = 25 C 25 20 15 10 5 0 0 1 125oC
-40oC
25oC
-40oC 2 3 4 5 6 7 8 VGS, GATE TO SOURCE VOLTAGE (V) 9 10
30
35
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT
5-3
RFM18N08, RFM18N10, RFP18N08, RFP18N10 Typical Performance Curves Unless Otherwise Specified
2.0 NORMALIZED DRAIN TO SOURCE ON RESISTANCE VGS = 10V ID = 18A PULSE DURATION = 80s NORMALIZED GATE THRESHOLD VOLTAGE 1.5 1.2
(Continued)
1.4
VGS = VDS ID = 250A
1.0
1
0.5
0.8
0 -50
0 50 100 150 TJ, JUNCTION TEMPERATURE (oC)
200
0.6 -50
0 50 100 150 TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE
2400 2000 C, CAPACITANCE (pF) 1600 1200 800 400 0 COSS CRSS 0 10 20 30 40 50 VDS, DRAIN TO SOURCE VOLTAGE (V) 60 CISS VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD
100 VDS, DRAIN TO SOURCE VOLTAGE (V)
75
VDD = BVDSS GATE SOURCE VOLTAGE
8
6
50 0.75BVDSS 0.50BVDSS 25 0.25BVDSS DRAIN SOURCE VOLTAGE 0 I 20 G(REF) IG(ACT) t, TIME (s) I 80 G(REF) IG(ACT) 0 2 4
NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
5-4
VGS, GATE TO SOURCE VOLTAGE (V)
RL = 5.56 IG(REF) = 1mA VGS = 10V VDD = BVDSS
10
RFM18N08, RFM18N10, RFP18N08, RFP18N10 Test Circuits and Waveforms
tON td(ON) tr RL VDS
+
tOFF td(OFF) tf 90%
90%
RG DUT
-
VDD 0
10% 90%
10%
VGS VGS 0 10%
50% PULSE WIDTH
50%
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
CURRENT REGULATOR
VDS (ISOLATED SUPPLY) VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS
12V BATTERY
0.2F
50k 0.3F
G
DUT 0
IG(REF) 0 IG CURRENT SAMPLING RESISTOR
S VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0
FIGURE 13. GATE CHARGE TEST CIRCUIT
FIGURE 14. GATE CHARGE WAVEFORMS
5-5

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