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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS1
0.2+/-0.05
(0.22) (0.22) (0.25)
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
DESCRIPTION
RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.
OUTLINE
DRAWING
4.6+/-0.05 3.3+/-0.05 0.8+/-0.05
6.0+/-0.15
1
4.9+/-0.15 1.0+/-0.05
FEATURES
High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz,520MHz High Efficiency:65%typ.(175MHz) High Efficiency:65%typ.(520MHz)
2
3
(0.25)
INDEX MARK (Gate)
0.2+/-0.05
For output stage of high power amplifiers In VHF/UHF band mobile radio sets.
0.9+/-0.1
APPLICATION
Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm
RoHS COMPLIANT
RD02MUS1-101,T112 is a RoHS compliant products. RoHS compliance is indicate by the letter "G" after the Lot Marking. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
RD02MUS1
MITSUBISHI ELECTRIC 1/9
10 Jan 2006
3.5+/-0.05
2.0+/-0.05
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS1
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
ABSOLUTE MAXIMUM RATINGS (Tc=25C UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input Power Drain Current Junction temperature Storage temperature Thermal resisitance CONDITIONS Vgs=0V Vds=0V Tc=25C Zg=Zl=50 Junction to case RATINGS UNIT 30 V +/-20 V 21.9 W 0.1 W 1.5 A C 150 -40 to +125 C C/W 5.7
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
SYMBOL IDSS IGSS Vth Pout1 D1 Pout2 D2 PARAMETER
(Tc=25C, UNLESS OTHERWISE NOTED)
CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=7.2V, Pin=50mW, f=175MHz Idq=200mA VDD=7.2V, Pin=50mW, f=520MHz Idq=200mA VDD=9.2V,Po=2W(PinControl) f=175MHz,Idq=200mA,Zg=50 Load VSWR=20:1(All Phase) VDD=9.2V,Po=2W(PinControl) f=520MHz,Idq=200mA,Zg=50 Load VSWR=20:1(All Phase) MIN 1 2 55 2 50 LIMITS TYP MAX. 100 1 1.8 3 3 65 3 65 No destroy UNIT uA uA V W % W % -
Zero gate Voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency Output power Drain efficiency Load VSWR tolerance
Load VSWR tolerance
No destroy
-
Note : Above parameters , ratings , limits and conditions are subject to change.
RD02MUS1
MITSUBISHI ELECTRIC 2/9
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS1
Vgs-Ids CHARACTERISTICS
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
TYPICAL CHARACTERISTICS
25 CHANNEL DISSIPATION Pch(W) 20 15 10 5 0 0 40 80 120 160 AMBIENT TEMPERATURE Ta(C) 200 DRAIN DISSIPATION VS. AMBIENT TEMPERATURE
*1:The material of the PCB Glass epoxy (t=0.6 mm)
3.0 2.5 2.0 1.5 1.0
GM Ta=+25C Vds=7.2V
Ids
On PCB(*1) with Heat-sink
Ids(A),GM(S)
On PCB(*1)
0.5 0.0 0 1 2 3 Vgs(V) 4 5
Vds-Ids CHARACTERISTICS 5.0 4.5 4.0 3.5 Ciss(pF) 3.0 Ids(A) 2.5 2.0 1.5 1.0 0.5 0.0 0 2 4 6 Vds(V) 8 10
Vgs=4V Vgs=5V Vgs=6V Ta=+25C Vgs=9V Vgs=8V Vgs=7V
Vds VS. Ciss CHARACTERISTICS 40
Ta=+25C f=1MHz
30
20
10
Vgs=3V
0 0 5 10 Vds(V) 15 20
Vds VS. Coss CHARACTERISTICS 40
Ta=+25C f=1MHz
Vds VS. Crss CHARACTERISTICS 6 5 4
Ta=+25C f=1MHz
30 Coss(pF) Crss(pF)
20
3 2
10 1 0 0 5 10 Vds(V) 15 20 0 0 5 10 Vds(V) 15 20
RD02MUS1
MITSUBISHI ELECTRIC 3/9
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS1
Pin-Po CHARACTERISTICS @f=175MHz
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=175MHz 40 35 Po(dBm) , Gp(dB) , Idd(A) 30 25 20 15 10 5 0 -10 -5 0 5 10 Pin(dBm)
Ta=+25C f=175MHz Vdd=7.2V Idq=200mA Gp Po
100 90 70 60 50 40 30 20 Pout(W) , Idd(A) 80 d(%)
4.0
Po
100 80 60 40 d(%) Idd(A)
10 Jan 2006
d
3.0 2.0 1.0 0.0 0 20 40 60 Pin(mW) 80
Idd
Ta=25C f=175MHz Vdd=7.2V Idq=200mA
15
20
20 100
Pin-Po CHARACTERISTICS @f=520MHz 40 35 Po(dBm) , Gp(dB) , Idd(A) 30 25 20 15 10 5 0 -10 -5 0 5 10 Pin(dBm)
Ta=+25C f=520MHz Vdd=7.2V Idq=200mA Gp Po
Pin-Po CHARACTERISTICS @f=520MHz 100 90 70 60 50 40 30 20 0.0 0 20 40 60 Pin(mW) 80 20 100 Pout(W) , Idd(A) 80 d(%) 3.0 2.0 1.0
d Ta=25C f=520MHz Vdd=7.2V Idq=200mA
4.0
Po
100 80 60 40 d(%)
Idd
15
20
Vdd-Po CHARACTERISTICS @f=175MHz 7 6 5 Po(W) 4 3 2 1 0 2 4 6 8 Vdd(V) 10 12
Idd Ta=25C f=175MHz Pin=50mW Idq=200mA Zg=ZI=50 ohm Po
Vdd-Po CHARACTERISTICS @f=520MHz 1.4 1.2 1.0 Idd(A) Po(W) 0.8 0.6 0.4 0.2 0.0 7 6 5 4 3 2 1 0 2 4 6 8 Vdd(V) 10 12
Ta=25C f=520MHz Pin=50mW Idq=200mA Zg=ZI=50 ohm Po
1.4 1.2 1.0
Idd
0.8 0.6 0.4 0.2 0.0
RD02MUS1
MITSUBISHI ELECTRIC 4/9
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS1
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
TYPICAL CHARACTERISTICS
Vgs-Ids CHARACTORISTICS 2 4 Vds=10V Tc=-25~+75C 3 Ids(A),GM(S) -25C +25C
2
+75C
1
0 2 3 4 Vgs(V) 5 6
RD02MUS1
MITSUBISHI ELECTRIC 5/9
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS1
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
TEST CIRCUIT(f=175MHz)
Vgg Vdd
C1 19m m R D 02MVS1 175MHz 3m m 10pF
C2 15m m L3 5m m 3m m 11.5m m 10pF
10uF,50V
4.7kO HM RF-IN 3m m 33m m 6.5m m 12m m L1 39pF 68O HM 240pF
13.5m m 12m m 5m m RF-O UT L2 62pF 43pF
5m m 62pF
L1: Enam eled wire 5Turns,D:0.43m m ,2.46m m O .D L2: Enam eled wire 3Turns,D :0.43m m ,2.46m m O .D L3: Enam eled wire 9Turns,D:0.43m m ,2.46m m O .D C 1,C 2:1000pF,0.0022uF in parallel
Note:Board m aterial-Teflon substrate Micro strip line width=2.2m m /50O HM,er:2.7,t=0.8m m
TEST CIRCUIT(f=520MHz)
V gg Vdd
C1 19m m 19m m R D 02MUS 1 520MHz 3m m 11m m 6pF 43pF 68O HM L1
C2
10uF,50V
4.7kO HM 26.5m m 20m m RF-IN 62pF 2m m 10m m
4.5m m
40.5m m R F-OUT 62pF 18pF
240pF
L1: Enam eled wire 9Turns,D :0.43m m ,2.46m m O .D C1,C 2:1000pF,0.022uF in parallel
Note:Board m aterial-Teflon substrate Micro strip line width=2.2m m /50OHM,er:2.7,t=0.8m m
RD02MUS1
MITSUBISHI ELECTRIC 6/9
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS1
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
175MHz Zin* Zout* Zo=50
Vdd=7.2V, Idq=200mA(Vgg adj.),Pin=0.05W
Zin*=11.61+j17.88 Zout*=6.83+j5.21
175MHz Zin*
Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance
175MHz Zout*
520MHz Zin* Zout* Zo=50
Vdd=7.2V, Idq=200mA(Vgg adj.),Pin=0.05W
Zin*=1.20+j5.47 Zout*=5.56+j1.31
520MHz Zin* Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance 520MHz Zout*
RD02MUS1
MITSUBISHI ELECTRIC 7/9
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS1
S12 (mag) 0.039 0.040 0.040 0.040 0.039 0.038 0.036 0.035 0.033 0.031 0.030 0.030 0.028 0.025 0.024 0.022 0.020 0.019 0.017 0.015 0.014 0.012 0.011 (ang) 14.9 5.9 2.7 -0.1 -4.3 -8.2 -11.4 -13.2 -16.8 -17.4 -17.9 -19.1 -20.9 -20.9 -21.9 -23.3 -21.9 -20.4 -21.1 -18.4 -17.2 -11.9 -6.6 (mag) 0.591 0.585 0.586 0.590 0.606 0.621 0.639 0.659 0.677 0.697 0.705 0.715 0.731 0.747 0.763 0.773 0.787 0.799 0.806 0.818 0.826 0.832 0.840 S22 (ang) -125.5 -138.6 -142.6 -145.5 -149.3 -151.7 -153.5 -155.2 -156.6 -157.8 -158.4 -159.2 -160.6 -161.8 -162.9 -164.3 -165.5 -166.5 -167.7 -169.0 -170.0 -171.1 -172.6
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
RD02MSU1 S-PARAMETER DATA (@Vdd=7.5V, Id=200mA)
Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 0.814 0.807 0.804 0.804 0.806 0.812 0.817 0.824 0.830 0.837 0.840 0.844 0.851 0.857 0.862 0.869 0.873 0.879 0.882 0.886 0.889 0.891 0.896 (ang) -132.9 -147.2 -151.6 -154.8 -159.4 -162.6 -164.9 -166.8 -168.5 -169.7 -170.3 -171.1 -172.3 -173.3 -174.4 -175.5 -176.6 -177.5 -178.5 -179.6 179.5 178.4 177.2 S21 (mag) (ang) 16.154 102.5 11.503 92.9 9.965 89.3 8.689 86.2 6.872 81.1 5.687 76.5 4.749 72.3 4.078 69.3 3.560 65.2 3.087 62.8 2.960 61.9 2.767 59.8 2.439 57.1 2.196 55.2 1.987 52.6 1.796 51.0 1.632 49.1 1.520 47.6 1.366 45.3 1.281 45.6 1.197 42.5 1.077 42.1 1.047 41.3
RD02MSU1 S-PARAMETER DATA (@Vdd=12.5V, Id=200mA)
Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 0.829 0.820 0.817 0.815 0.817 0.822 0.827 0.833 0.838 0.846 0.848 0.852 0.858 0.863 0.868 0.874 0.879 0.884 0.888 0.890 0.894 0.895 0.899 (ang) -127.5 -143.3 -148.2 -151.8 -157.0 -160.7 -163.3 -165.5 -167.3 -168.8 -169.3 -170.2 -171.6 -172.6 -173.8 -175.0 -176.1 -177.1 -178.2 -179.3 179.8 178.6 177.5 S21 (mag) (ang) 16.693 104.9 12.079 94.6 10.504 90.7 9.178 87.5 7.273 82.0 6.018 77.3 5.033 72.8 4.317 69.6 3.772 65.5 3.269 63.0 3.132 62.0 2.928 59.8 2.582 57.1 2.324 55.1 2.102 52.5 1.899 50.8 1.726 48.8 1.606 47.3 1.445 45.0 1.351 45.2 1.265 42.1 1.138 41.6 1.104 40.9 S12 (mag) 0.037 0.039 0.039 0.038 0.037 0.036 0.035 0.033 0.032 0.030 0.029 0.028 0.026 0.024 0.023 0.021 0.019 0.017 0.016 0.014 0.013 0.011 0.010 (ang) 17.6 7.8 4.3 1.1 -2.9 -7.1 -10.7 -12.6 -16.2 -16.9 -17.4 -18.7 -20.3 -21.1 -21.8 -24.5 -21.5 -21.5 -21.1 -18.0 -15.9 -11.0 -4.9 (mag) 0.557 0.550 0.551 0.556 0.574 0.592 0.613 0.636 0.656 0.678 0.686 0.698 0.716 0.733 0.750 0.761 0.777 0.789 0.798 0.810 0.818 0.825 0.833 S22 (ang) -118.4 -132.5 -136.7 -139.9 -144.2 -146.8 -149.0 -150.9 -152.5 -153.9 -154.6 -155.5 -157.0 -158.5 -159.7 -161.2 -162.6 -163.7 -165.0 -166.5 -167.5 -168.7 -170.3
RD02MUS1
MITSUBISHI ELECTRIC 8/9
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS1
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
warning ! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury.
RD02MUS1
MITSUBISHI ELECTRIC 9/9
10 Jan 2006

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