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PHOTOMULTlPLlER TUBES R1527 R1527P(For Photon Counting)
High Cathode Sensitivity with Low Noise Photocathode
FEATURES
Spectral Response ................................... 185 to 680 nm Cathode Sensitivity Luminous ...................................................... 60 A/lm Radiant at 400nm ............................................ 60 mA/W Anode Sensitivity (at 1000V) Luminous ......................................................... 400 A/lm Radiant at 400nm ..................................... 4.0 105 A/W Low Dark Current .................................................... 0.1 nA Low Dark Counts (R1527P) ................................... 10 cps Hamamatsu R1527 features high cathode sensitivity, high current amplification, and low dark current. Variant tube (R1527P) specially selected for photon counting application is also available. The R1527 is useful for fluorescence, chemiluminescence, Raman spectroscopy and low light level detection.
Figure 1: Typical Spectral Response
GENERAL
Parameter
Spectral Response Wavelength of Maximum Response Photocathode MateriaI Minimum Effective Area Window Material Dynode Secondary Emitting Surface Structure Number of Stages Direct Interelectrode Capacitances Anode to Last Dynode Anode to All Other Electrodes Base Weight SuitabIe Socket SuitabIe Socket Assembly
TPMSB0025EA
Description/Vaiue Unit
185 to 680 400 Low noise bialkali 8 24 UV glass Low noise bialkali Circular-cage 9 4 6 11-pin base JEDEC No. B11-88 45 E678-11A (option) E717-21 (option) pF pF nm
PHOTOCATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%)
103 CATHODE RADIANT SENSITIVITY 102
nm
mm
101 QUANTUM EFFICIENCY 100
g
10-1
10-2 100
200
300
400
500
600
700
800
WAVELENGTH (nm)
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. lnformation furnished by HAMAMATS U is believed to be reliabIe. However, no responsibility is assumed for possibIe inaccuracies or ommissions. Specifications are subject to change without notice. No patent right are granted to any of the circuits described herein. (c) 1994 Hamamatsu Photonics K.K.
PHOTOMULTlPLlER TUBES R1527, R1527P(For Photon Counting)
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Supply Voltage Between Anode and Cathode Between Anode and Last Dynode Average Anode Current Ambient Temperature 1250 250 0.1 -80 to +50 Vdc Vdc mA
Value
Unit
CHARACTERISTlCS (at 25
Parameter
Cathode Sensitivity Quantum Efficiency at 300nm (Peak) LuminousB Radiant at 400nm (Peak) BlueC Anode Sensitivity LuminousD Radiant at 400nm GainE
)
R1527 for General Purpose Min. Typ.
19 60 60 6.4 400 4.0 105 6.7 106 2.0
R1527P for Photon Counting Min. Typ.
19 60 60 6.4 400 4.0 105 6.7 106 0.5 50 nA cps W ns ns ns % %
Max.
Max.
Unit
% A/lm mA/W A/lm-b A/lm A/W
40
40
200
200
Anode Dark After 30minute Storage in the darkness Anode Dark CountsF ENI(Equivalent Noise Input)G Time Anode Pulse Rise TimeH Electron Transit TimeJ Transit Time Spread (TTS)K Anode Current StabilityL Current Hysteresis Voltage Hysteresis ResponseD 3.7
Current E
0.1 10-17 2.2 22 1.2 0.1 1.0
0.1 10 3.7 10-17 2.2 22 1.2 0.1 1.0
NOTES
A: Averaged over any interval of 30 seconds maximum. B: The light source is a tungsten filament lamp operated at a distribution temperature of 2856K. Supply voltage is 150 volts between the cathode and all other electrodes connected together as anode. C: The value is cathode output current when a blue filter(Corning CS-5-58 polished to 1/2 stock thickness) is interposed between the light source and the tube under the same condition as Note B. D: Measured with the same light source as Note B and with the anode-tocathode supply voltage and voltage distribution ratio shown in Table 1 below. E: Measured with the same supply voltage and voltage distribution ratio as Note D after removal of light. F: Measured at the voltage producing the gain of 1 106. G:ENI is an indication of the photon-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. ENI = where 2q.ldb.G. f
K: Also called transit time jitter. This is the fluctuation in electron transit time between individual pulses in the signal photoelectron mode, and may be defined as the FWHM of the frequency distribution of electron transit times. L: Hysteresis is temporary instability in anode current after light and voltage are applied. Hysteresis = lmax. li lmin. 100(%)
ANODE CURRENT
li
l max. l min. TIME
0
5
6
7 (minutes)
TPMSB0002EA
S q = Electronic charge (1.60 10-19 coulomb). ldb = Anode dark current(after 30 minute storage) in amperes. G = Gain. f = Bandwidth of the system in hertz. 1 hertz is used. S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response.
(1)Current Hysteresis The tube is operated at 750 volts with an anode current of 1 micro-ampere for 5 minutes. The light is then removed from the tube for a minute. The tube is then re-illuminated by the previous light level for a minute to measure the variation. (2)Voltage Hysteresis The tube is operated at 300 volts with an anode current of 0.1 micro-ampere for 5 minutes. The light is then removed from the tube and the supply voltage is quickly increased to 800 volts. After a minute, the supply voltage is then reduced to the previous value and the tube is re-illuminated for a minute to measure the variation. Table 1:Voltage Distribution Ratio
Electrode Distribution Ratio K 1 Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 1 1 1 1 1 1 1 1 1 P
H: The rise time is the time for the output pulse to rise from 10% to 90% of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. J: The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitube. In measurement, the whole photocathode is illuminated.
SuppIy Voltage : 1000Vdc K : Cathode, Dy : Dynode,
P : Anode
Figure 2: Typical Gain and Anode Dark Current
TPMSB0026EA
Figure 3: Typical Time Response
TPMSB0004EB
10-5
108
100 80
10-6 ANODE DARK CURRENT (A) 10-7
GA IN
107 106
60 40
TRAN
SIT T
IME
20
TIME (ns)
GAIN
10-8 10-9
R CU R
105 104 103 102 101 1500
10 8 6 4
T EN
10-10 10-11 10-12 300
OD E D
K AR
RISE
TIME
AN
2
400
500
600
800
1000
1
300
500
700
1000
1500
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
Figure 4: Typical ENI vs. Wavelength
10-12
TPMSB0027EA
Figure 5: Typical EADCI (Equivalent Anode Dark Current Input) vs. Supply Voltage
10-10
TPMSB0028EA
EQUIVALENT NOISE INPUT (W)
10-13
10-11
EADCI (lm)
10-14
10-12
10-15
10-13
10-16
10-17 100
200
300
400
500
600
700
800
10-14 300
400
500
600
800
1000 1200
WAVELENGTH (nm)
SUPPLY VOLTAGE (V)
Data shown here, which is given from a relation among supply voltage, anode sensitivity and dark current, serves as a good reference in order to determine the most suitable supply voltage or its range.
Figure 6: Typical Single Photon Height Distribution for R1527P
1
TPMSB0029EA
Figure 7: Typical Temperature Characteristics of Dark Count for R1527P
104
TPMSB0030EA
0.8
0.6
DARK COUNT (cps)
WAVELENGTH OF INCIDENT LIGHT : 450 (nm) : 880 (V) SUPPLY VOLTAGE : 71 (ch) LOWER LEVEL DISCRI. : 5562 (cps) PHOTON+DARK COUNT : 10 (cps) DARK COUNT : 25 (C) TEMPERATURE
103
102
0.4 SIGNAL+DARK 0.2 DARK 0 200 400 600 800 1000
101
100
10-1 -20
0
+20
TEMPERATURE (C)
+40
+60
PHOTOMULTlPLlER TUBES R1527, R1527P(For Photon Counting)
Figure 8: Dimensional Outline and Basing Diagram(Unit: mm)
28.5 1.5
49 38
Figure 10: Socket E678-11A (Optional)
8MIN. PHOTOCATHODE DY5 24MIN. DY4 4 80MAX. 94MAX. DY3 3 DY2 2 1 11 K
4
8 DY8
5
9 DY9 10 P
29
2.5
49.0
DY1
BOTTOM VIEW (BASING DIAGRAM)
32.2 0.5
TACCA0064EA
11 PIN BASE JEDEC No. B11-88
TPMSA0001EA
Figure 9: D Type Socket Assembly E717-21 (Optional)
5 33.0 0.3 3.5 PMT P
SOCKET PIN No. 10
R10 38.0 0.3 49.0 0.3 DY9 DY8 DY7 DY6 29 4.8 DY5 DY4 41.0 0.5 DY3 31.0 0.5 HOUSING (INSULATOR) POTTING COMPOUND DY2 DY1 K 2 R2 1 R1 11 9 R9 8 R8 7 R7 6 5 4 R4 3 R3
C3 C2 C1
SIGNAL GND SIGNAL OUTPUT RG-174/U (BLACK) POWER SUPPLY GND AWG22 (BLACK)
R6 R to R10 : 330k C1 to C3 : 0.01 F R5
450 10
-HV
AWG22 (VIOLET)
R1 to R10 : 330k C1 to C3 : 0.01 F
TACCA0002ED
Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply.
Warning-Personal Safety Hazards Electrical Shock-Operating voltages applied to this device present a shock hazard.
HAMAMATSU PHOTONICS K.K., Electoron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384 North Europe: Hamamatsu Photonics Norden AB: Farogatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95 Italy: Hamamatsu Photonics Italia: S.R.L.: Via Della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)2-935 81 733, Fax: (39)2-935 81 741
18
DIRECTION OF LIGHT
3.5
33
5
DY6 6
7
DY7
TPMS1007E02 OCT. 1994

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