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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
PUMF11 NPN resistor-equipped transistor; PNP general purpose transistor
Product specification 2002 Apr 09
Philips Semiconductors
Product specification
NPN resistor-equipped transistor; PNP general purpose transistor
FEATURES * Resistor-equipped transistor and general purpose transistor in one package * 100 mA collector current * 50 V collector-emitter voltage * 300 mW total power dissipation * SOT363 package; replaces two SOT323 (SC-70) packaged devices on same PCB area * Reduced pick and place costs. APPLICATIONS * Power management switch for portable equipment, e.g. cellular phone and CD player * Switch for regulator. DESCRIPTION NPN resistor-equipped transistor and a PNP general purpose transistor in a SOT363 (SC-88) plastic package. MARKING TYPE NUMBER PUMF11 Note 1. = p: Made in Hong Kong. = t: Made in Malaysia.
TR1 R2
PUMF11
QUICK REFERENCE DATA SYMBOL TR1 (NPN) VCEO IO R1 R2 TR2 (PNP) VCEO IC ICM PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 collector-emitter voltage collector current (DC) peak collector current 50 100 200 V mA mA collector-emitter voltage output current (DC) bias resistor bias resistor 50 100 22 47 V mA k k PARAMETER MAX. UNIT
MARKING CODE(1) R1
6 5 4
6
5
4
TR2 R1
1
Top view
2
3
MAM465
1
2
3
Fig.1 Simplified outline (SOT363) and symbol.
2, 5 1, 4
MBK120
6, 3
Fig.2 Equivalent inverter symbol.
2002 Apr 09
2
Philips Semiconductors
Product specification
NPN resistor-equipped transistor; PNP general purpose transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per transistor Ptot Tstg Tj Tamb TR1 (NPN) VCBO VCEO VEBO Vi collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM TR2 (PNP) VCBO VCEO VEBO IC ICM Per device Ptot Note 1. Device mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Device mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 VALUE 416 total power dissipation Tamb 25 C; note 1 - collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current open emitter open base open collector - - - - - output current (DC) peak collector current - - - - open emitter open base open collector - - - 50 50 10 total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 - -65 - -65 PARAMETER CONDITIONS MIN.
PUMF11
MAX.
UNIT
200 +150 150 +150
mW C C C V V V V V mA mA
+40 -10 100 100 -50 -40 -5 -100 -200 300
V V V mA mA
mW
UNIT K/W
2002 Apr 09
3
Philips Semiconductors
Product specification
NPN resistor-equipped transistor; PNP general purpose transistor
CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL TR1 (NPN) ICBO ICEO IEBO hFE VCEsat Vi(off) Vi(on) R1 R2 -----R1 Cc TR2 (PNP) ICBO ICEO IEBO hFE VCEsat Cc fT Note 1. Device mounted on an FR4 printed-circuit board. APPLICATION INFORMATION collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain saturation voltage collector capacitance transition frequency VCB = -30 V; IE = 0 VCB = -30 V; IB = 0; Tj = 150 C VEB = -4 V; IC = 0 VCE = -6 V; IC = -1 mA IC = -50 mA; IB = -5 mA; note 1 VCB = -12 V; IE = ie = 0; f = 1 MHz - - - 120 - - - - - - - - - collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage input off voltage input on voltage input resistor resistor ratio collector capacitance VCB = 10 V; IE = ie = 0; f = 1 MHz VCB = 50 V; IE = 0 VCE = 30 V; IB = 0 VCE = 30 V; IB = 0; Tj = 150 C VEB = 5 V; IC = 0 VCE = 5 V; IC = 5 mA IC = 10 mA; IB = 0.5 mA VCE = 5 V; IC = 100 A VCE = 0.3 V; IC = 2 mA - - - - 80 - - 2 15.4 1.7 - - - - - - - 0.9 1.1 22 2.1 - PARAMETER CONDITIONS MIN. TYP.
PUMF11
MAX. UNIT
100 1 50 0.12 - 150 0.5 - 28.6 2.6 2.5 -100 -10 -100 - -200 2.2 -
nA A A mA mV V V k
pF
nA A nA mV pF MHz
VCE = -12 V; IC = -2 mA; f = 100 MHz 100
4
handbook, halfpage
3 5 RBE(ext) RB(ext) 6 R1 2
R2
1
MHC182
Fig.3 Typical power management circuit.
2002 Apr 09
4
Philips Semiconductors
Product specification
NPN resistor-equipped transistor; PNP general purpose transistor
PACKAGE OUTLINE Plastic surface mounted package; 6 leads
PUMF11
SOT363
D
B
E
A
X
y
HE
vMA
6
5
4
Q
pin 1 index
A
A1
1
e1 e
2
bp
3
wM B detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT363
REFERENCES IEC JEDEC EIAJ SC-88
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
2002 Apr 09
5
Philips Semiconductors
Product specification
NPN resistor-equipped transistor; PNP general purpose transistor
DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS
PUMF11
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2002 Apr 09
6
Philips Semiconductors
Product specification
NPN resistor-equipped transistor; PNP general purpose transistor
NOTES
PUMF11
2002 Apr 09
7
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp8
Date of release: 2002
Apr 09
Document order number:
9397 750 09388

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