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GENERAL PURPOSE L TO X-BAND GaAs MESFET
FEATURES
* LOW NOISE FIGURE: 0.8 dB typical at 4 GHz * HIGH ASSOCIATED GAIN: 12 dB typical at 4 GHz * LG = 1.0 m, WG = 400 m * LOW COST METAL/CERAMIC PACKAGE * TAPE & REEL PACKAGING OPTION AVAILABLE
Optimum Noise Figure, NFOPT (dB)
4 3.5 GA 3 2.5 2 1.5 1 NF 0.5 0 1
NE76184AS
NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA
24 21 18 15 12 9 6 3 0 10 20
DESCRIPTION
NE76184AS is a high performance gallium arsenide metal semiconductor field effect transistor housed in an epoxysealed, metal/ceramic package. Its low noise figure makes this device appropriate for use in the second or third stages of low noise amplifiers operating in the 1-12 GHz frequency range. The device is fabricated using ion implantation for improved RF and DC performance, reliability, and uniformity. The NE76184AS is suitable for DBS, TVRO, GPS and other commercial applications. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance.
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (TA = 25C)
PART NUMBER PACKAGE OUTLINE SYMBOL NF1 GA1 P1dB PARAMETERS AND CONDITIONS Noise Figure at VDS = 3 V, ID = 10 mA, f = 4 GHz Associated Gain at VDS = 3 V, ID = 10 mA, f = 4 GHz Output Power at 1 dB Gain Compression Point, f = 4 GHz VDS = 3 V, IDS = 10 mA VDS = 3 V, IDS = 30 mA Gain at P1dB, f = 4 GHz VDS = 3 V, IDS = 10 mA VDS = 3 V, IDS = 30 mA Saturated Drain Current at VDS = 3 V, VGS = 0 Pinch Off Voltage at VDS = 3 V, ID = 100 A Transconductance at VDS = 3 V, ID = 10 mA Gate to Source Leak Current at VGS = -5 V Thermal Resistance UNITS dB dB dBm dBm dB dB mA V mS A C/W 30 -3.0 20 MIN NE76184AS 84AS TYP 0.8 12.0 12.5 15.0 11.5 13.5 60 -1.1 45 10 300 100 -0.5 MAX 1.4
G1dB
IDSS VP gm IGSO RTH
Note: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening test with the fixture tuned for the "generic" type but not for each specimen.
California Eastern Laboratories
Associated Gain, GA (dB)
NE76184AS ABSOLUTE MAXIMUM RATINGS1 (TA = 25C)
SYMBOLS VDS VGDO VGSO IDS TCH TSTG PT PARAMETERS Drain to Source Voltage Gate to Drain Voltage Gate to Source Voltage Drain Current Channel Temperature Storage Temperature Total Power Dissipation UNITS V V V mA C C mW RATINGS 5 -5 -6 IDSS 150 -65 to +150 300
TYPICAL NOISE PARAMETERS (TA = 25C)
VDS = 3 V, IDS = 10 mA FREQ. (GHz) 1.0 2.0 4.0 6.0 8.0 10.0 12.0 NFOPT (dB) 0.55 0.60 0.80 1.15 1.60 2.15 2.70 GA (dB) 18.0 15.0 12.0 10.0 8.5 7.5 6.5 MAG 0.92 0.81 0.66 0.54 0.46 0.41 0.41 OPT ANG 19 40 82 125 167 -152 -108 Rn/50 0.60 0.55 0.35 0.25 0.10 0.25 0.48
Note: 1.Operation in excess of any one of these parameters may result in permanent damage.
TYPICAL PERFORMANCE CURVES (TA = 25C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
400
NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 3 V, f = 4 GHz
2.5 15 14 2 13 12 1.5 NF 10 1 9 8 0.5 7 0 10 20 30 40 50 60 11
Total Power Dissipation, PT (mW)
350 300 250 200 150 100 Free Air 50 0 0 25 50 75 100 125 150 175 200 Infinite Heat sink
Ambient Temperature, TA (C)
Drain Current, IDS (mA)
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
100
75
TRANSCONDUCTANCE vs. DRAIN CURRENT VDS = 3 V
Transconductance, gm (mS)
Drain Current, IDS (mA)
80 VGS 0 60 -0.2 40 -0.4
60
45
30
20
15
-0.6 -0.8 -1.0 0 1 2 3 4 5
0 0 20 40 60 80 100
0
Drain to Source Voltage, VDS (V)
Drain Current, IDS (mA)
Associated Gain, GA (dB)
GA
Noise Figure, NF (dB)
NE76184AS TYPICAL SCATTERING PARAMETERS1 (TA = 25C)
VDS = 3 V, IDS = 10 mA
FREQUENCY (GHz) 0.1 0.2 0.5 1.0 1.5 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 MAG 0.999 0.999 0.990 0.970 0.932 0.884 0.784 0.695 0.620 0.571 0.545 0.535 0.543 0.569 0.604 0.641 0.667 0.680 0.692 0.700 0.696 0.677 S11 ANG -3.0 -7.0 -16.0 -31.0 -46.0 -61.0 -89.0 -118.0 -145.0 -172.0 163.0 139.0 117.0 96.0 77.0 61.0 47.0 33.0 20.0 6.0 -8.0 -20.0 MAG 3.859 3.837 3.815 3.754 3.626 3.494 3.179 2.873 2.595 2.329 2.099 1.903 1.740 1.586 1.433 1.295 1.162 1.049 0.970 0.884 0.799 0.730 S21 ANG 176.0 174.0 165.0 152.0 138.0 126.0 101.0 78.0 57.0 37.0 19.0 1.0 -16.0 -33.0 -50.0 -66.0 -81.0 -97.0 -111.0 -127.0 -142.0 -157.0 MAG 0.003 0.007 0.024 0.040 0.058 0.076 0.097 0.114 0.121 0.124 0.124 0.124 0.127 0.131 0.138 0.142 0.153 0.160 0.171 0.181 0.191 0.199 S12 ANG 87.0 84.0 75.0 69.0 59.0 49.0 34.0 20.0 8.0 -3.0 -11.0 -17.0 -23.0 -29.0 -34.0 -41.0 -49.0 -57.0 -67.0 -79.0 -90.0 -102.0 MAG 0.770 0.763 0.756 0.741 0.720 0.696 0.638 0.574 0.517 0.472 0.440 0.423 0.413 0.411 0.419 0.447 0.486 0.525 0.566 0.603 0.639 0.666 S22 ANG -2.0 -4.0 -10.0 -19.0 -28.0 -36.0 -52.0 -67.0 -82.0 -98.0 -113.0 -129.0 -146.0 -166.0 173.0 153.0 136.0 119.0 103.0 88.0 73.0 61.0 0.06 0.04 0.14 0.15 0.24 0.32 0.47 0.60 0.75 0.90 1.04 1.15 1.21 1.22 1.19 1.15 1.06 1.03 0.94 0.88 0.87 0.88 K S21 (dB) 11.7 11.6 11.6 11.4 11.1 10.8 10.0 9.1 8.2 7.3 6.4 5.5 4.8 4.0 3.1 2.2 1.3 0.4 -0.2 -1.0 -1.9 -2.7 MAG1 (dB) 31.0 27.3 22.0 19.7 17.9 16.6 15.1 14.0 13.3 12.7 11.0 9.4 8.5 7.9 7.4 7.2 7.3 7.0 7.5 6.8 6.2 5.6
VDS = 3 V, IDS = 30 mA
FREQUENCY (GHz) 0.1 0.2 0.5 1.0 1.5 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 Note: 1. Gain Calculations: |S21| MAG = |S12| MAG 0.999 0.998 0.988 0.958 0.909 0.850 0.738 0.646 0.579 0.544 0.530 0.531 0.550 0.581 0.617 0.658 0.681 0.695 0.703 0.706 0.704 0.676 S11 ANG -4.0 -7.0 -18.0 -35.0 -52.0 -68.0 -99.0 -129.0 -157.0 176.0 152.0 129.0 108.0 88.0 71.0 56.0 42.0 29.0 16.0 2.0 -11.0 -25.0 MAG 5.192 5.148 5.088 4.937 4.698 4.446 3.901 3.407 2.996 2.648 2.359 2.120 1.928 1.748 1.574 1.427 1.287 1.168 1.079 0.987 0.899 0.811 S21 ANG 176.0 174.0 164.0 149.0 135.0 122.0 97.0 74.0 54.0 35.0 17.0 0.0 -16.0 -33.0 -49.0 -64.0 -80.0 -95.0 -109.0 -125.0 -140.0 -154.0 MAG 0.003 0.007 0.017 0.034 0.049 0.062 0.078 0.091 0.098 0.104 0.110 0.117 0.126 0.138 0.149 0.159 0.170 0.181 0.193 0.202 0.210 0.218 S12 ANG 86.8 83.6 75.0 68.0 60.0 51.0 38.0 26.0 16.0 8.0 3.0 -2.0 -9.0 -16.0 -23.0 -32.0 -41.0 -50.0 -63.0 -75.0 -87.0 -101.0 MAG 0.702 0.686 0.676 0.656 0.633 0.607 0.550 0.494 0.444 0.408 0.382 0.371 0.365 0.365 0.374 0.405 0.445 0.487 0.526 0.565 0.602 0.634 S22 ANG -3.0 -4.0 -10.0 -19.0 -28.0 -36.0 -51.0 -65.0 -79.0 -94.0 -110.0 -126.0 -144.0 -164.0 174.0 153.0 135.0 119.0 103.0 88.0 74.0 60.0 0.04 0.06 0.15 0.21 0.29 0.39 0.56 0.73 0.90 1.03 1.12 1.17 1.16 1.12 1.08 1.00 0.95 0.90 0.85 0.82 0.80 0.86 K S21 (dB) 14.3 14.2 14.1 13.8 13.4 12.9 11.8 10.6 9.5 8.4 7.4 6.5 5.7 4.8 3.9 3.0 2.1 1.3 0.6 -0.1 -0.9 -1.8 MAG1 (dB) 32.3 28.6 24.7 21.6 19.8 18.5 16.9 15.7 14.8 12.9 11.1 10.0 9.3 8.9 8.4 9.0 8.7 8.0 7.4 6.8 6.3 5.7
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE76184AS OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 84AS
1.78 0.2
S
1.78 0.2 D
J
S
G
0.5 0.1 (ALL LEADS)
1.0 0.2 (ALL LEADS)
1.7 MAX +0.07 0.1 -0.03 Part Number Designator (Letter). When the letter is upright, the gate lead is to the right.
ORDERING INFORMATION
PART NUMBER NE76184AS NE76184A-TI NE76184A-SL QTY Bulk 1K/Reel Bulk/up to 1K PACKAGE 84AS 84AS 84A-SL LEAD LENGTH 1.0 mm 1.0 mm 1.7 mm
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -2/97 DATA SUBJECT TO CHANGE WITHOUT NOTICE

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