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Freescale Semiconductor Technical Data
Document Number: MRF6V2010N Rev. 1, 5/2007
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for CW large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. * Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 30 mA, Pout = 10 Watts Power Gain -- 23.9 dB Drain Efficiency -- 62% * Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 10 Watts CW Output Power Features * Integrated ESD Protection * Excellent Thermal Stability * Facilitates Manual Gain Control, ALC and Modulation Techniques * 200C Capable Plastic Package * RoHS Compliant * TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. * TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF6V2010NR1 MRF6V2010NBR1
10 - 450 MHz, 10 W, 50 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs
CASE 1265 - 08, STYLE 1 TO - 270 - 2 PLASTIC MRF6V2010NR1
CASE 1337 - 03, STYLE 1 TO - 272 - 2 PLASTIC MRF6V2010NBR1
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ Value - 0.5, +110 - 0.5, +10 - 65 to +150 200 Unit Vdc Vdc C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 81C, 10 W CW Symbol RJC Value (1,2) 3.0 Unit C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2007. All rights reserved.
MRF6V2010NR1 MRF6V2010NBR1 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 2 (Minimum) A (Minimum) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) Drain - Source Breakdown Voltage (ID = 5 mA, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 28 Adc) Gate Quiescent Voltage (VDD = 50 Vdc, ID = 30 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 70 mAdc) Dynamic Characteristics Reverse Transfer Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Power Gain Drain Efficiency Input Return Loss Crss Coss Ciss -- -- -- 0.13 7.3 16.3 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) 1 1.5 -- 1.68 2.68 0.26 3 3.5 -- Vdc Vdc Vdc IDSS IDSS V(BR)DSS IGSS -- -- 110 -- -- -- -- -- 2.5 50 -- 10 mA Adc Vdc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 30 mA, Pout = 10 W, f = 220 MHz, CW Gps D IRL 22.5 58 -- 23.9 62 - 14 25.5 -- -9 dB % dB
ATTENTION: The MRF6V2010N and MRF6V2010NB are high power devices and special considerations must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263 (for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to ensure proper mounting of these devices.
MRF6V2010NR1 MRF6V2010NBR1 2 RF Device Data Freescale Semiconductor
L2 B1 VBIAS + C2 + C3 C4 C5 C6 C7 C8 L3 R1 RF INPUT Z1 C1 Z2 Z3 L1 Z4 C9 DUT C10 C17 RF OUTPUT C11 C12 C13 C14
B2 + C15 C16 VSUPPLY
Z5
Z6
Z7
Z8
Z9
Z10 C18
Z11
Z1 Z2 Z3 Z4 Z5 Z6
0.235 1.190 0.619 0.190 0.293 0.120
x 0.082 x 0.082 x 0.082 x 0.270 x 0.270 x 0.270
Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip
Z7 Z8 Z9 Z10 Z11 PCB
0.062 x 0.270 Microstrip 0.198 x 0.082 Microstrip 5.600 x 0.082 Microstrip 0.442 x 0.082 Microstrip 0.341 x 0.082 Microstrip Arlon GX - 0300 - 55 - 22, 0.030, r = 2.55
Figure 1. MRF6V2010NR1(NBR1) Test Circuit Schematic
Table 6. MRF6V2010NR1(NBR1) Test Circuit Component Designations and Values
Part B1, B2 C1, C8, C11, C18 C2 C3 C4, C13 C5, C14 C6, C15 C7, C12 C9 C10 C16 C17 L1 L2, L3 R1 Description 95 , 100 MHz Long Ferrite Beads 1000 pF Chip Capacitors 10 F, 35 V Tantalum Capacitor 22 F, 35 V Tantalum Capacitor 39 K pF Chip Capacitors 22 K pF Chip Capacitors 0.1 F Chip Capacitors 2.2 F, 50 V Chip Capacitors 0.6 - 4.5 pF Variable Capacitor, Gigatrim 12 pF Chip Capacitor 470 F, 63 V Electrolytic Capacitor 27 pF Chip Capacitor 17.5 nH Inductor 82 nH Inductors 120 , 1/4 W Chip Resistor Part Number 2743021447 ATC100B102JT50XT T491D106K035AT T491X226K035AT ATC200B393KT50XT ATC200B223KT50XT CDR33BX104AKYS C1825C225J5RAC 27271SL ATC100B120JT500XT ESMG630ELL471MK205 ATC100B270JT500XT B06T 1812SMS - 82NJ CRCW12061200FKTA Manufacturer Fair - Rite ATC Kemet Kemet ATC ATC Kemet Kemet Johanson ATC United Chemi - Con ATC CoilCraft CoilCraft Vishay
MRF6V2010NR1 MRF6V2010NBR1 RF Device Data Freescale Semiconductor 3
C5 C4 B1 C7 C2 C3 R1 L1 C8 CUT OUT AREA C12 C11 C6
C14 C13 L2 C15 B2 C16
L3 C10
C17
C18
C1
C9
MRF6V2010N/NB Rev. 3
Figure 2. MRF6V2010NR1(NBR1) Test Circuit Component Layout
MRF6V2010NR1 MRF6V2010NBR1 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
100 100
10 Coss Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc Crss 0.1 0 10 20 30 40 50 VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Ciss C, CAPACITANCE (pF)
10
1
1
TC = 25C 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 100 200
Figure 3. Capacitance versus Drain - Source Voltage
0.35 0.3 ID, DRAIN CURRENT (AMPS) VGS = 3 V 0.25 0.2 2.75 V 0.15 2.63 V 0.1 0.05 2.25 V 0 0 20 40 60 80 100 120 DRAIN VOLTAGE (VOLTS) 18 0.1 2.5 V Gps, POWER GAIN (dB) 23 22 23 mA 21 20 15 mA 19 25 24
Figure 4. DC Safe Operating Area
IDQ = 45 mA 38 mA 30 mA
VDD = 50 Vdc f1 = 220 MHz 1 Pout, OUTPUT POWER (WATTS) CW 10 20
Figure 5. DC Drain Current versus Drain Voltage
-20 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) -25 -30 -35 38 mA -40 -45 -50 -55 1 IDQ = 60 mA 45 mA 15 mA 23 mA Pout, OUTPUT POWER (dBm) 45 47
Figure 6. CW Power Gain versus Output Power
Ideal P3dB = 40.87 dBm (12.2 W)
30 mA
43 P1dB = 40.43 dBm (11.04 W) 41
Actual
VDD = 50 Vdc f1 = 220 MHz, f2 = 220.1 MHz Two -Tone Measurements 100 kHz Tone Spacing 10 20
39 VDD = 50 Vdc, IDQ = 30 mA f = 220 MHz 37 13 15 17 19 21 23
Pout, OUTPUT POWER (WATTS) PEP
Pin, INPUT POWER (dBm)
Figure 7. Third Order Intermodulation Distortion versus Output Power
Figure 8. CW Output Power versus Input Power
MRF6V2010NR1 MRF6V2010NBR1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
26 24 Gps, POWER GAIN (dB) 22 20 18 16 14 25 V 12 VDD = 20 V 10 0 2 4 6 8 10 12 14 Pout, OUTPUT POWER (WATTS) CW 30 V IDQ = 30 mA f = 220 MHz 40 V 35 V 45 V 50 V Pout, OUTPUT POWER (dBm) 40 25_C 35 85_C 45 TC = -30_C
30 VDD = 50 Vdc IDQ = 30 mA f = 220 MHz 0 5 10 15 20 25
25 20 Pin, INPUT POWER (dBm)
Figure 9. Power Gain versus Output Power
26 25 Gps, POWER GAIN (dB) 24 23 22 21 20 19 18 0.1 1 Pout, OUTPUT POWER (WATTS) CW VDD = 50 Vdc IDQ = 30 mA f = 220 MHz 10 85_C 25_C D TC = -30_C Gps 85_C -30_C 25_C 63 54 45 36 27 18 9 0 20 105 90 D, DRAIN EFFICIENCY (%) 72 108
Figure 10. Power Output versus Power Input
MTTF (HOURS)
107
106
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 10 W CW, and D = 62%. MTTF calculator available at http:/www.freescale.com/rf. Select Tools/ Software/Application Software/Calculators to access the MTTF calcu- lators by product.
Figure 11. Power Gain and Drain Efficiency versus CW Output Power
Figure 12. MTTF versus Junction Temperature
MRF6V2010NR1 MRF6V2010NBR1 6 RF Device Data Freescale Semiconductor
Zo = 50 Zload f = 220 MHz
Zsource
f = 220 MHz
VDD = 50 Vdc, IDQ = 30 mA, Pout = 10 W CW f MHz 220 Zsource W 20 + j25 Zload W 75 + j44
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 13. Series Equivalent Source and Load Impedance
MRF6V2010NR1 MRF6V2010NBR1 RF Device Data Freescale Semiconductor 7
PACKAGE DIMENSIONS
MRF6V2010NR1 MRF6V2010NBR1 8 RF Device Data Freescale Semiconductor
MRF6V2010NR1 MRF6V2010NBR1 RF Device Data Freescale Semiconductor 9
MRF6V2010NR1 MRF6V2010NBR1 10 RF Device Data Freescale Semiconductor
MRF6V2010NR1 MRF6V2010NBR1 RF Device Data Freescale Semiconductor 11
MRF6V2010NR1 MRF6V2010NBR1 12 RF Device Data Freescale Semiconductor
MRF6V2010NR1 MRF6V2010NBR1 RF Device Data Freescale Semiconductor 13
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 1 Date Feb. 2007 May 2007 * Initial Release of Data Sheet * Corrected Test Circuit Component part numbers in Table 6, Component Designations and Values for C1, C8, C11, C18, C4, C13, C5, and C14, p. 3 * Corrected Series Impedance Zsource and Zload values, Fig. 13, Series Equivalent Source and Load Impedance, p. 7 Description
MRF6V2010NR1 MRF6V2010NBR1 14 RF Device Data Freescale Semiconductor
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MRF6V2010NR1 MRF6V2010NBR1
Document Number: RF Device Data MRF6V2010N Rev. 1, 5/2007 Freescale Semiconductor
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