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| T-1 3/4 PACKAGE PIN PHOTODIODE Description The MID-56419 is a photodiode mounted in water clear end look plastic package and suitable for the variety wavelength. r 5.05 (.200) MID-56419 Package Dimensions Unit: mm ( inches ) 5.47 (.215) 7.62 (.300) 5.90 (.230) 1.00 (.040) FLAT DENOTES CATHOD Features l l l l l 23.40 MIN. (.920) .50 TYP. (.020) High photo sensitivity Low junction capacitance High cut-off frequency Fast switching time Acceptance viwe angle : 60 1.00MIN. (.040) 2.54 (.100) A C Notes : 1.Tolerance is 0.25 mm (.010") unless otherwise noted. 2.Protruded resin under flange is 1.0 mm (.040") max. 3.Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25oC Parameter Power Dissipation Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 150 -55 C to +100 C -55oC to +100oC 260oC for 5 seconds o o Unit mW Unity Opto Technology Co., Ltd. 02/04/2002 MID-56419 Optical-Electrical Characteristics Parameter Reverse Break Down Voltage Reverse Dark Current Open Circuit Voltage Rise Time Fall Time Light Current Total Capacitance Test Conditions IR=100A Ee=0 VR=10V Ee=0 =940nm Ee=0.1mW/cm2 VR =10V =940nm RL=50 VR =5V , =940nm Ee=0.1mW/cm2 VR =3V , f=1MHZ Ee=0 Symbol V(BR)R ID VOC Tr Tf IL CT 350 30 30 12 25 Min. 30 Type . @ TA=25oC Max. Unit V 30 nA mV nsec A pF Typical Optical-Electrical Characteristic Curves 4000 100 Dark Current - pA 3000 Capacitance C - pF 80 60 40 20 0 2000 1000 0 0 5 10 15 20 0.01 0.1 1 10 100 Reverse Volatage - VR FIG.1 DARK CURRENT VS REVERSE VOLTAGE TEMP=25oC, Ee=0 mW/cm2 Photocurrent ( Ipamb / Ip 25J ) 1.4 Reverse Voltage- VR FIG.2 CAPACITANCE VS. REVERSE VOLTAGE F=1MHZ, Ee=0mW/cm2 1000.0 Dark Current IR - nA -30 -10 10 30 50 70 1.2 1.0 0.8 0.6 0.4 0.2 0.0 100.0 10.0 1.0 0.1 0 20 40 60 80 100 Ambeint Temperature- oC FIG.3 PHOTOCURRENT VS AMBIENT TEMPERATURE Ambient Temperature-oC FIG.4 DARK CURRENT VS AMBIENT TEMPERATURE VR=10, Ee=0 mw/cm2 Unity Opto Technology Co., Ltd. 02/04/2002 MID-56419 Typical Optical-Electrical Characteristic Curves Relative Response Sensitivity 1 1000 Ip - A 0.1 @ 100 10 Photocurrnet 1 0.01 0.2 0.5 0.8 1.1 1.4 0.1 0.01 0.1 1 10 Wavelength (nm) FIG.5 RELATIVE SPECTRAL SENSITIVITY VS. WAVELENGTH 0 10 20 30 40 1.0 0.9 0.8 50 60 70 80 90 0.5 0.3 0.1 0.2 0.4 0.6 Irradiance Ee (mW/cm2) FIG.6 PHOTOCURRENT VS. IRRADIANCE = 950 nm Total Power Dissipation mW 200 Relative Sensitivity 150 100 50 0 FIG .7 SENSITIVITY DIAGRAM Ambient Temperature -oC FIG.8 TOTAL POWER DISSIPATION VS. AMBIENT TEMPERATURE 0 20 40 60 80 100 Unity Opto Technology Co., Ltd. 02/04/2002 |
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