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| PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5217 K-Band 2-Stage Power Amplifier DESCRIPTION The MGFC5217 is a GaAs MMIC chip especially designed for 18.0 ~ 19.0 GHz band Middle Power Amplifier (MPA) . BLOCK DIAGRAM Vg1 Vg2 FEATURES RF frequency : 18.0 to 19.0 GHz In Vd1 Out Vd2 P2dB : 25.5 dBm(TYP.) @ 18.0 to 19.0 GHz PHOTOGRAPH TARGET SPECIFICATIONS (Ta=25C) Limits Symbol IDSS1 IDSS2 Vp1 Vp2 P3dB Gain Input Return Loss Output Return Loss Parameter Drain Saturation Current Drain Saturation Current Pinch Off Voltage Pinch Off Voltage Output Power at 3 dB Compression Point Gain Input Return Loss Output Return Loss f=18.0-19.0 GHz, IM3 Inter Modulation Level Vd1=Vd2=5V , Id1=40mA*, Id2=180mA* * : Ids at RF off TBD dBc Vd=3.0V,Id=0.032mA Vd=3.0V,Id=0.12mA f=18.0-19.0 GHz, Vd1=Vd2=5V , Id1=40mA*, Id2=180mA* 17.0 6.0 6.0 dB dB dB Test Conditions Vd=3.0V Min. 80 300 -2.0 -2.0 Typ. 25.5 Max. 140 540 -1.0 -1.0 Unit mA mA V V dBm MITSUBISHI ELECTRIC as of July '98 PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5217 K-Band 2-Stage Power Amplifier DIE SIZE AND BOND PAD LOCATION(UNIT : M) 1820 UNIT:m 580 130 Vg2 (-0.2 to -1.0 V) Vg1(-0.2 to -1.0 V) GND GND RF-in GND X Dimension : 1940(+60/-100)m Y Dimension : 1000(+60/-100)m GND RF-out GND Vd1 Vd2 GND 570 1570 1820 1940 MITSUBISHI ELECTRIC as of July '98 PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5217 K-Band 2-Stage Power Amplifier TYPICAL CHARACTERISTICS S-Parameter vs. Frequency (Vd = 5 V, Ids = 220 mA, Ta = 25 degrees C.) 20 10 S21 S2 1 0 -10 S11 -20 15 16 17 18 19 20 21 22 23 24 25 Frequency [GHz] S22 Output Power Performances (Vd = 5 V, Ids = 220 mA, Ta = 25 degrees C.) 30 f=18GHz 25 20 15 10 5 -10 -5 0 5 Pin [dBm] 10 15 40 30 20 10 0 50 MITSUBISHI ELECTRIC as of July '98 |
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