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ESD Diodes MAZW000H Series Silicon planar type Unit: mm For surge absorption circuit Features * Two elements anode-common type * SSS-Mini type 3-pin package 0.33+0.05 -0.02 3 0.10+0.05 -0.02 (0.40) (0.40) 0.800.05 1.200.05 5 0.15 min. 0.23+0.05 -0.02 1 2 Absolute Maximum Ratings Ta = 25C Parameter Total power dissipation Junction temperature Storage temperature * Ptot Tj Tstg 150 150 -55 to +150 mW C C Note) *: Ptot = 150 mW achieved with a printed circuit board. 1: Cathode 1 2: Cathode 2 3: Anode 1, 2 SSSMini3-F1 Package Internally connected circuit 3 1 2 Common Electrical Characteristics Ta = 25C 3C Parameter Zener voltage * Symbol VZ RZK RZ IR IZ IZ IZ VR Conditions Specified value Specified value Specified value Specified value Min Typ Max Unit V A Zener rise operating resistance Zener operating resistance Reverse current Refer to the list of the electrical characteristics within part numbers Note) 1. Measuring methods are based JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Electrostatic breakdown voltage is 10 kV Test method: IEC1000-4-2 (C = 150 pF, R = 330 , Contact discharge: 10 times) 3. *: The temperature must be controlled 25C for VZ mesurement. VZ value measured at other temperature must be adjusted to VZ (25C) VZ guaranted 20 ms after current flow. 0.15 max. Symbol Rating Unit 0 to 0.01 0.520.03 5 0.15 min. 0.800.05 1.200.05 Publication date: 30 June, 2003 SKE00019AED 1 MAZW000H Series Electrical characteristics within part numbers Ta = 25C 3C Zener voltage Part number Min MAZW062H MAZW068H MAZW082H MAZW100H MAZW120H 5.8 6.4 7.7 9.4 11.4 VZ (V) Nom 6.2 6.8 8.2 10.0 12.0 Max 6.6 7.2 8.7 10.6 12.7 IZ (mA) 5 5 5 5 5 Reverse current (DC) IR (A) VR Max (V) 0.2 0.1 0.1 0.05 0.05 4 4 5 7 9 Zener operating resistance RZ () RZK () IZ = 5 mA IZ = 0.5 mA Max Max 50 30 30 30 30 100 60 60 60 60 Marking symbol 62 68 82 10 12 Note) 1. The VZ value is the one after power application for 20 ms at Ta = 25C. 2. The zener voltage temperature coefficient is the one for Tj = 25C to 150C. Ptot Ta 250 10 mm 10 mm A K I Z VZ 102 Ta = 25C 102 Ta = 25C I F VF Total power dissipation Ptot (mW) 200 150 1 Forward current IF (mA) Zener current IZ (mA) 0.8 mm Print foil t = 0.035 mm 10 10 1 MAZW062H MAZW068H MAZW082H MAZW100H MAZW120H 100 10 -1 50 10 -1 10 -2 0 0 40 80 120 160 200 10 -3 10 -2 4 6 8 10 12 14 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature Ta (C) Zener voltage VZ (V) Forward voltage VF (V) RZ IZ Temperature coefficient of zener voltage SZ (mV / C) 102 12 SZ IZ Ta = 25C Ta = 25C to 150C MAZW120H Ct VR 30 Ta = 25C Zener operating resistance RZ () MAZW062H MAZW120H 10 MAZW100H MAZW082H MAZW068H 10 8 Terminal capacitance Ct (pF) MAZW100H 20 MAZW068H 6 MAZW082H 1 4 MAZW068H 10 MAZW062H MAZW082H MAZW100H MAZW120H 2 MAZW062H 10 -1 0 1 10 102 0 10 20 30 40 50 60 0 0 4 8 12 Zener current IZ (mA) Zener current IZ (mA) Reverse voltage VR (V) 2 SKE00019AED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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